Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators


Autoria(s): Zhang YX (Zhang Yun-Xiao); Liao ZY (Liao Zai-Yi); Zhao LJ (Zhao Ling-Juan); Pan JQ (Pan Jiao-Qing); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei)
Data(s)

2010

Resumo

We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 Omega thin-film resistor and a bypass capacitor integrated on a chip.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17T01:36:30Z No. of bitstreams: 1 Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators.pdf: 812497 bytes, checksum: 61e819a8617a76202c29b4776e21c7ae (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17T02:26:41Z (GMT) No. of bitstreams: 1 Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators.pdf: 812497 bytes, checksum: 61e819a8617a76202c29b4776e21c7ae (MD5)

Made available in DSpace on 2010-08-17T02:26:41Z (GMT). No. of bitstreams: 1 Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators.pdf: 812497 bytes, checksum: 61e819a8617a76202c29b4776e21c7ae (MD5) Previous issue date: 2010

Project supported by the National High Technology Research and Development of China (Grant Nos. 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417), the State Key Development Program for Basic Research of China (Grant Nos. 2006CB604901 and 2006CB604902), and the National Natural Science Foundation of China (Grant Nos. 90401025, 60736036, 60706009 and 60777021).

其它

Project supported by the National High Technology Research and Development of China (Grant Nos. 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417), the State Key Development Program for Basic Research of China (Grant Nos. 2006CB604901 and 2006CB604902), and the National Natural Science Foundation of China (Grant Nos. 90401025, 60736036, 60706009 and 60777021).

Identificador

http://ir.semi.ac.cn/handle/172111/13484

http://www.irgrid.ac.cn/handle/1471x/66252

Idioma(s)

英语

Fonte

Zhang YX (Zhang Yun-Xiao), Liao ZY (Liao Zai-Yi), Zhao LJ (Zhao Ling-Juan), Pan JQ (Pan Jiao-Qing), Zhu HL (Zhu Hong-Liang), Wang W (Wang Wei).Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators.CHINESE PHYSICS B,2010,19(7):Art. No. 074216

Palavras-Chave #半导体材料 #electroabsorption modulator #intra-step quantum wells #uni-traveling-carrier RF-gain #WAVELENGTH CONVERSION #WAVE-GUIDE
Tipo

期刊论文