The laser-assisted cold spray process

Thick metal coatings are currently deposited via two well established routes, Laser or arc based cladding, and thermal spray. A new coating technique known as Laser-assisted Cold Spray (LCS), which aims to expand on the capabilities of the two process routes currently available, is under development at the University of Cambridge in the UK. LCS is a development of the Cold Spray process (CS) in which coatings are built up from powder particles which are entrained within a gas stream and accelerated through a de Laval nozzle, impacting the substrate at supersonic speeds that exceed a material dependent critical velocity.

Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green

Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) were investigated by numerical simulation based on a two-dimensional waveguide model. The simulation results indicate that an increased ridge height of the waveguide structure can enhance the lateral optical confinement and reduce the threshold current. For 405 nm violet LDs, the effects of p-AlGaN cladding layer composition and thickness on confinement factor and absorption loss were analyzed. The experimental results are in good agreement with the simulation analysis. Compared to violet LD, the confinement factors of 450 nm blue LD and 530 nm green LD were much lower. Using InGaN as waveguide layers that has higher refractive index than GaN will effectively enhance the optical confinement for blue and green LDs. The LDs based on nonpolar substrate allow for thick well layers and will increase the confinement factor several times. Furthermore, the confinement factor is less sensitive to alloys composition of waveguide and cladding layers, being an advantage especially important for ultraviolet and green LDs.

Passive Q-switched mode locking of double-clading Yb : fiber laser with ion-implanted GaAs

We report the technique of the ion-implanted semi-insulating GaAs wafer used for passive Q-switched mode locking in double-cladding Yb:fiber laser. The wafer was implanted with 400-keV energy, 10(16)/cm(2) dose As+ ions, and was annealed at 600degreesC for 20 min. At the pump power of 5W, we achieved output power of 200mW. The repetition rate of envelope of Q-switched mode locking is 50-kHz with a FWHM envelope of 4mus. The repetition rate of mode locked pulse train was found to be 15-MHz. This is the first report of such a kind of laser to the best of our knowledge.

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.

808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice

808 nm high-power laser diodes are gown by MBE. In the laser structure, the combination of Si-doped GRIN (graded-index) region adjacent to n-AlGaAs cladding layer with reduced Be doping concentration near the active region has been used to diminish Be diffusion and oxygen incorporation. As compared with the laser structure which has undoped GRIN region and uniform doping concentration for Si and Be, respectively, in the cladding layers, the slope efficiency has increased by about 8%. Typical threshold current density of 300 A/cm(2) and the minimum threshold current density of 220 A/cm(2) for lasers with 500 mu m cavity length are obtained. A high slope efficiency of 1.3 W/A for coated lasers with 1000 mu m cavity length is also demonstrated, Recorded CW output power at room temperature has reached 2.3 W.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

High-Power Distributed Feedback Laser Diodes Emitting at 820nm

By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.

4-W single transverse mode Yb3+-doped fiber laser pumped by 915-nm laser diode array

A cladding-pumped ytterbium-doped fiber laser is described in this letter. Using unusual pumping source with 915-nm wavelength, slope efficiency up to 75% with respect to absorbed input power and output power is obtained, a maximum output power of 4.006 W with fundamental mode is measured.

High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide

The 808nm laser diodes with a broad waveguide are designed and fabricated. The thickness of the Al_(0.35)-Ga_(0.65)As waveguide is increased to 0.9μm. In order to suppress the super modes, the thickness of the Al_(0.55)Ga_(0.45)As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm~(-1). The structures are grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Laser-Driven Fast Electron Collimation in Targets with Resistivity Boundary

We demonstrate experimentally that the relativistic electron flow in a dense plasma can be efficiently confined and guided in targets exhibiting a high-resistivity-core-low-resistivity-cladding structure analogous to optical waveguides. The relativistic electron beam is shown to be confined to an area of the order of the core diameter (50 mu m), which has the potential to substantially enhance the coupling efficiency of electrons to the compressed fusion fuel in the Fast Ignitor fusion in full-scale fusion experiments.

Multi-stage ytterbium fiber-amplifier seeded by a gain-switched laser diode

We demonstrated all-fiber amplification of 11 ps pulses from a gain-switched laser diode at 1064 nm. The diode was driven at a repetition rate of 40 MHz and delivered 13 µW of fiber-coupled average output power. For the low output pulse energy of 325 fJ we have designed a multi-stage core pumped pre-amplifier in order to keep the contribution of undesired amplified spontaneous emission as low as possible. By using a novel time-domain approach for determining the power spectral density ratio (PSD) of signal to noise, we identified the optimal working point for our pre-amplifier. After the pre-amplifier we reduced the 40 MHz repetition rate to 1 MHz using a fiber coupled pulse-picker. The final amplification was done with a cladding pumped Yb-doped large mode area fiber and a subsequent Yb-doped rod-type fiber. With our setup we reached a total gain of 73 dB, resulting in pulse energies of >5.6 µJ and peak powers of >0.5 MW. The average PSD-ratio of signal to noise we determined to be 18/1 at the output of the final amplification stage.

Highly thermally responsive hybrid in-fiber slab waveguide grating structure with a plastic core and a silica cladding

A 1.2(height)×125(depth)×500(length) micro-slot was engraved along a fiber Bragg grating by chemically assisted femtosecond laser processing. By filling epoxy and UV-curing, waveguide with plastic-core and silica-cladding was created, presenting high thermal responding coefficient of 211pm/°C.

Highly refractive index sensitive femtosecond laser inscribed long period gratings

The distinct behaviour of femtosecond laser inscribed long period gratings, with a non-uniform index perturbation within the optical fibre core, has been studied experimentally. The non-uniform laser-induced perturbation results in light coupling from the core mode to a greater number of cladding modes than is the case with their UV laser inscribed counterparts, and this is made evident from the surrounding refractive index (SRI) grating response. Femtosecond inscribed long period gratings are shown to simultaneously couple to multiple sets of cladding modes. A 400μm LPG is shown to result in attenuation peaks that have both blue and red wavelength shifts over a 1250nm to 1700nm wavelength range. This gives rise to SRI sensitivities far greater than anything achievable by monitoring a single attenuation peak. The maximum sensitivity produced by monitoring a single attenuation peak was 1106nm/RIU, whereas monitoring opposing wavelength shifts resulted in a significantly improved sensitivity of 1680nm/RIU. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Highly thermally responsive hybrid in-fiber sSlab waveguide grating structure with a plastic core and a silica cladding

A 1.2(height)×125(depth)×500(length) micro-slot was engraved along a fiber Bragg grating by chemically assisted femtosecond laser processing. By filling epoxy and UV-curing, waveguide with plastic-core and silica-cladding was created, presenting high thermal responding coefficient of 211pm/°C.