Electronic states in InAs quantum spheres and ellipsoids

The eight-band effective-mass Hamiltonian of the free-standing narrow-gap InAs quantum ellipsoids is developed, and the electron and hole electronic structures as well as optical properties are calculated by using the model. The energies, wave functions and transition probabilities of quantum spheres as functions of the radius of quantum sphere R is presented. It is found that the energy levels do not vary as 1/R-2, which is caused by the coupling between the conduction and valence bands, and by the constant terms correspond to the spin-orbit splitting energy. The blueshifts of hole states depend strongly on the coupling from electron states, so that the order of hole states changes as has been predicted in experiment. The exciton binding energies are calculated, the calculated excitonic gaps as functions of the ground exciton transition energy are in good agreement with the photoluminescence measured spectra in details. Finally, the hole energy levels and the linear polarization factors in InAs quantum ellipsoids as functions of the aspect ratio are presented. The state 1S(Z up arrow)((1/2)) becomes the hole ground state when e is larger than 2.4. The saturation value of the linear polarization factors of the InAs long ellipsoids of diameter 2.0 nm is 0.86, in agreement with the experimental results.

Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure

The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (100) GaAs Substrates by magnetron Sputtering has been investigated and even epitaxial lnAs(0.3)Sb(0.7) films have been successfully obtained. A strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. A qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed. (c) 2005 Elsevier B.V. All rights reserved.

Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate

The photoluminescence (PL) spectra of self-assembled In0.55Al0.45As/Al0.45Ga0.5As quantum dots (QD) grown on (311)A GaAs substrate were measured. The type- I character of PL related to the X valley was verified by excitation power dependence of peak position and the PL spectra under different pressure , which was attributed to the type- II transition from X valley in Al0.5Ga0.5As to heavy holes in In0.55Al0.45As The high energy Gamma -related transition was also observed above 70K and assigned as the transition between Gamma valley and heavy holes in In-0.55 Al0.45As. The X-valley split was discussed to interpret the observed second X-related peak under pressure.

Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots

The photoluminescence (PL) of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-I structure with lowest conduction band at the Gamma -valley. However, the PL peak of dots with 7 nm diameter moves to lower energy with increasing pressure. It is a typical character for the X-related transition. Then these small dots have a type-II structure with the X-valley as the lowest conduction level. An envelope-function calculation confirms that the Gamma -like exciton transition energy will rise above the X-like transition energy in the In0.55Al0.45As/Al0.5Ga0.5As structure if the dot size is small enough.

Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate

We investigated the photoluminescence (PL) of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots (QDs) grown on (311)A GaAs substrate. The PL peak at 10 K shifts to lower energy by about 30 meV when the excitation power decreases by two orders of magnitude. It has a red-shift under pressure, that is the character of X-like transition. Moreover, its peak energy is smaller than the indirect gap of bulk Al0.5Ga0.5As and In0.55Al0.45As. We then attribute that peak to the type-II transition between electrons in X valley of Al0.5Ga0.5As and heavy holes in In0.55Al0.45As QDs. A new peak appears at the higher energy when temperature is increased above 70 K. It shifts to higher energy with increasing pressure, corresponding to the transition from conduction Gamma band to valence band in QDs. The measurements demonstrate that our In0.55Al0.45As/Al0.5Ga0.5As quantum dots are type-II QDs with X-like conduction-band minimum. To interpret the second X-related peak emerged under pressure, we discuss the X-valley split in QDs briefly. (C) 2000 American Institute of Physics. [S0003-6951(00)04622-2].

INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA - X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. As a prototype crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for GaP, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for GaP, InP and InAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting GAMMA - X intervalley shatterings for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.

INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA-X deformation-potential constants (IVDP's) have been calculated by use of a first-principles pseudopotential method for the III-V zinc-blende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb. When the calculated IVDP's of LA phonons for GaP, InP, and InAs and of LO phonons for AlAs, AlSb, GaAs, GaSb, and InSb are compared with results of a previous calculation that used the empirical pseudopotential method (EPM) and a rigid-ion approximation, good agreement is found. However, our ab initio pseudopotential results on IVDP's of LA phonons for AlAs, AlSb, GaAs, GaSb, and InSb and of LO phonons for GaP, InP, and InAs are about one order of magnitude smaller than those obtained by use of EPM calculations, indicating that the electron redistribution accompanying crystal-lattice deformation has a significant effect on GAMMA-X intervalley scattering for these phonon modes when the anions are being displaced. In our calculations the LA- and LO-phonon modes at the X point have been evaluated in the frozen-phonon approximation. We have also obtained the LAX- and LOX-phonon frequencies for these materials from total-energy calculations, which agree very well with experimental values for these semiconductors. We have also calculated GAMMA-X hole-phonon scattering matrix elements for the top valence bands in these nine semiconductors, from which the GAMMA-X IVDP's of the top valence bands for the longitudinal phonons and transverse phonons are evaluated, respectively.

1ST PRINCIPLES PSEUDOPOTENTIAL CALCULATIONS OF ZONE BOUNDARY PHONON FREQUENCIES OF III-V-ZINCBLENDE SEMICONDUCTORS

Longitudinal zone boundary X phonon frequencies have been calculated by a first principles pseudopotential method for III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. The phonon frequencies have been evaluated from total energy calculations in the frozen phonon approximation. The calculated phonon frequencies agree very well with the experimental values.

生长温度对InAs／GaSb超晶格晶体结构和表面形貌的影响

采用分子束外延（MBE）技术，在GaSb（100）衬底上外延生长InAs（4ML）／GaSb（8ML）超晶格（SLs）。研究了生长温度（400～440℃）对超晶格晶体结构和表面形貌的影响。结果表明，420℃生长的超晶格结构完整和表面粗糙度最小，其荧光光谱（PL）峰值波长在约2．54μm处，响应光谱50％截止波长在约2．4μm处。通过控制快门顺序形成InSb和混合两种界面，并发现生长温度强烈影响混合界面InAs／GaSb超晶格结构和表面形貌，而对InSb界面超晶格的影响较小。

霍尔罗盘误差补偿算法及实验分析

研究了锑化铟(InSb)霍尔罗盘中的椭圆误差补偿问题。文中详细分析了基于椭圆假设的罗盘误差补偿算法,使罗盘具备了自动误差补偿和自动校准功能。实验结果表明,利用这种算法的霍尔罗盘精度达到了±2.46°,基本达到了实用要求。本文还详细分析了影响罗盘精度的原因和以后改进的措施.

Space-grown SI-GaAs and its application

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-travelling furnace under microgravity. The crystal was characterized systematically and was used in fabricating low noise field effect transistors and analogue switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single. crystal has surpassed the best. terrestrial counterparts. Studies on the correlation between SI-GaAs wafers and the electronic devices and integrated circuits indicate that the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry.

Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots

The photoluminescence (PL) of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-I structure with lowest conduction band at the Gamma -valley. However, the PL peak of dots with 7 nm diameter moves to lower energy with increasing pressure. It is a typical character for the X-related transition. Then these small dots have a type-II structure with the X-valley as the lowest conduction level. An envelope-function calculation confirms that the Gamma -like exciton transition energy will rise above the X-like transition energy in the In0.55Al0.45As/Al0.5Ga0.5As structure if the dot size is small enough.

基于重离子径迹模板法的纳米线制备与性能研究

本文从纳米材料概念及特性分析入手，介绍了当前纳米线制备方法及其应用，重点对基于重离子径迹模板法的纳米线制备与性能研究进行阐述，本文具体研究内容包括以下几个方面：利用电化学沉积法在重离子径迹模板中制备出直径从30到500 nm、包括单晶和多晶结构的银纳米线阵列，实验结果表明所制备的银单晶纳米线沿(111)面择优取向生长；直径为100 nm的银纳米线在温度低于50 K时，电阻急骤减小。不同直径金纳米线利用电化学沉积法在重离子径迹模板中成功制备，利用XRD测得所制备金纳米线沿(200)面择优取向生长。对金纳米线阵列紫外吸收光谱研究表明，吸收光谱峰位随直径的增加向长波方向移动，同时半高宽增加。当入射光与金纳米线有一定夹角时，其吸收峰随着夹角的增加向短波方向移动。另外，金纳米线在空气中的氧化现象通过其紫外吸收光谱被间接观察到。利用电化学共沉积技术在重离子径迹模板中成功制备出InSb半导体纳米线，通过实验证明，InSb半导体纳米线共沉积电位位于-1.3-1.4 V之间。通过对Cu/Co多层纳米线研究发现，所制备出的Cu/Co多层纳米线具有好的柔韧性，不容易在层间发生断裂

曙红薄膜的非线性近共振饱和吸收

近共振增强光学非线性材料及其在光学信号处理中的应用近十年来倍受重视。如相位共轭反射镜和光双稳态器件在光学联想存贮及光学数字处理器中的应用研究。人们在积极开发半导体材料(GaAs,InSb等)和光折变材料(BSO,BaCO_3,SBN等)的同时,开始对有机薄膜材料感兴趣,因为薄膜结构可避免激光光束在体材料中聚焦深度的不均匀性,另外通过压缩膜厚还可降低严格的布拉格条件。本文对由曙红(Eosin)制作的有机薄膜进行了考察。

Reversible ageing effects in cryogenically cooled infrared filter radiometers

In this paper we report the observation of drifts in the responsivity of cryogenically cooled InSb detector-based infrared filter radiometers which have very strong wavelength dependence. These drifts can result in the increase or decrease of the response of the filter radiometers by over 5%. The origin of these variations was investigated and was shown to arise due to a thin film of ice formed on the multi-layer bandpass filter used to define the spectral response of the filter radiometer. The thin layer of ice interacts with the characteristics of the filter (which itself consists of a number of thin layers) and modifies the filter spectral transmission thus modifying the response of the filter radiometer of which the filter is part of. These observations are particularly relevant to space instruments which use infrared filter radiometers for earth observation. Debris from the spacecraft engines is known to accumulate on cold surfaces of instruments carried on board. The deposition of this debris on cold filters can modify the spectral response of the instruments, which use these filters to define a spectral response. Crown Copyright (c) 2004 Published by Elsevier B.V. All rights reserved.