973 resultados para Helium


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The double ionization of helium by electron impact for 106 eV incident energy was studied in a kinematically complete experiment by using a reaction microscope. The pattern of the angular correlation of the three emitted electrons was analyzed by selecting different values of the recoil ion longitudinal momentum. The Wannier predicted geometry appears when the recoil ion carries the full initial projectile momentum. It was found that at this low impact energy, the outgoing electrons still remember the initial-state collision information.

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We have performed an experiment on near threshold double ionization of helium by 106 eV electron impact with an improved reaction microscope. In this experiment the momenta of three particles after ionization were measured, and the information on correlation of emitted electrons was obtained. Detailed descriptions of the experimental setup and the methods of reconstruction of electron momentum were given. We focused on the analysis of momentum and energy distributions and the angular correlation of the emitted electrons. The experimental results were compared with Wannier's prediction, and it was found that the experimental results showed some characteristic features predicted by Wannier theory.

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The collisions of the isocharged sequence ions of q=6 (C6+, N6+, O6+, F6+, Ne6+, Ar6+, and Ca6+), q=7 (F7+, Ne7+, S7+, Ar7+, and Ca7+), q=8 (F8+, Ne8+, Ar8+, and Ca8+), q=9 (F9+, Ne9+, Si9+, S9+, Ar9+, and Ca9+) and q=11 (Si11+, Ar11+, and Ca11+) with helium at the same velocities were investigated. The cross-section ratios of the double-electron transfer (DET) to the single-electron capture (SEC) sigma(DET)/sigma(SEC) and the true double-electron capture (TDC) to the double-electron transfer sigma(TDC)/sigma(DET) were measured. It shows that for different ions in an isocharged sequence, the experimental cross-section ratio sigma(DET)/sigma(SEC) varies by a factor of 3. The results confirm that the projectile core is another dominant factor besides the charge state and the collision velocity in slow (0.35-0.49v(0); v(0) denotes the Bohr velocity) highly charged ions (HCIs) with helium collisions. The experimental cross-section ratio sigma(DET)/sigma(SEC) is compared with the extended classical over-barrier model (ECBM) [A. Barany , Nucl. Instrum. Methods Phys. Res. B 9, 397 (1985)], the molecular Coulombic barrier model (MCBM) [A. Niehaus, J. Phys. B 19, 2925 (1986)], and the semiempirical scaling laws (SSL) [N. Selberg , Phys. Rev. A 54, 4127 (1996)]. It also shows that the projectile core properties affect the initial capture probabilities as well as the subsequent relaxation of the projectiles. The experimental cross-section ratio sigma(TDC)/sigma(DET) for those lower isocharged sequences is dramatically affected by the projectile core structure, while for those sufficiently highly isocharged sequences, the autoionization always dominates, hence the cross-section ratio sigma(TDC)/sigma(DET) is always small.

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The multi-electron processes are investigated for 17.9-120keV/u C1+, 30-323 keV/u C2+, 120-438 keV/u C3+, 287-480keV/u C4+ incident on a helium target. The cross-section ratios of double electron (DE) process to the total of the single electron (SE) and the double electron process (i.e. SE+DE), the direct double electron (DDI) to the direct single ionization (DSI) as well as the contributions of DDI to DE and of TI to DE are measured using coincidence techniques. The energy and charge state dependences of the measured cross-section ratios are studied and discussed.

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State-selective single electron capture cross sections are measured by recoil ion momentum spectroscopy technique for He2+ on He at 30 keV incident energy. The cross sections for capture into ground and excited states are obtained and compared to classical model calculations as well as to the quantum mechanical calculations. The experimental results are in good agreement with quantum mechanical results.

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The hardness of 4H-SiC, which was high-temperature (500 K) helium-Implanted to fluences of 3 x 10(16) Ions cm(-2) and subsequently thermally annealed at the temperature ranging from 773 to 1273 K, was studied by nanoindentation It is found that the hardness of the implanted 4H-SiC increases at the first, then decreases, and then increases again with increasing annealing tempeature in the temperature range of 500-1273 K, and significant increase in hardness is observed at 773 K. The behavior is ascribed to the changes of the density, length, and tangling of the covalent Si-C bond through the recombination of point defects, clustering of He-vacancy, and growth of helium bubbles during the thermal annealing

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4H-SiC晶体经能量为100keV,剂量为3×1016cm-2的氦离子高温(500K)注入后,再在773—1273K温度范围内进行了退火处理,最后使用纳米压痕仪测量了样品注入面的硬度.测试结果表明,在500—1273K温度范围内样品的硬度随退火温度升高呈现先增大后减小再增大的趋势,其中773K退火样品的硬度增大明显.分析认为,退火样品的硬度变化是由退火过程中缺陷复合与氦泡生长导致样品内部的Si—C键密度、键长和键角改变引起的.

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A thermodynamic model of the evolution of microcracks in silicon caused by helium and hydrogen co-implantation during annealing was studied. The crack growth rate relies on the amount of helium atoms and hydrogen molecules present. Here, the crack radius was studied as a function of annealing time and temperature, and compared with experimental results. The mean crack radius was found to be proportional to the annealing temperature and the helium and hydrogen implanted fluence. The gas desorption should be considered during annealing process. (C) 2009 Elsevier B.V. All rights reserved.

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The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles. (C) 2010 Elsevier B.V. All rights reserved.

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Single crystals of 6H-SiC were implanted at 600 K with 100 key He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473 K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3 x 10(16) He+/cm(2), extended defects are created by thermal annealing to 1473 K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si-C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing. (C) 2010 Elsevier B.V. All rights reserved.

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We report the measurements of relative cross sections for single capture (SC), double capture (DC), single ionization (SI), double ionization (DI), and transfer ionization (TI) in collisions of Xe23+ ions with helium atoms in the velocity range of 0.65-1.32 a.u. The relative cross sections show a weak velocity dependence. The cross-section ratio of double-(DE) to single-electron (SE) removal from He, sigma(DE)/sigma(SE), is about 0.45. Single capture is the dominant reaction channel which is followed by transfer ionization, while only very small probabilities are found for pure ionization and double capture. The present experimental data are in satisfactory agreement with the estimations by the extended classical over-barrier (ECB) model..

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采用5台1.5W/4.2KG-M制冷机(日本住友RDK415D)并联研制出了1台方便实验室使用的小型氦液化装置,并为其建立了性能测量实验台。实验结果表明:液氦温度为4.17K(饱和压力为96kPa)时,氦液化率为74L/d;液氦温度为4.42K(饱和压力为121kPa)时,液化率为116L/d,经拟合,在4.2K(饱和压力为100kPa)时液化率为83L/d,并且通过100小时以上的连续运行,说明该氦液化装置自循环性能良好。通过实验发现:实测氦液化率远大于制冷机冷头制冷量对应的计算氦液化率。分析认为:G-M制冷机气缸壁对氦气预冷是提高实际氦液化率的主要因素。

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Helium, neon and argon isotope compositions of fluid inclusions have been measured in massive sulfide samples from the Jade hydrothermal field in the central Okinawa Trough. Fluid-inclusion He-3/He-4 ratios are between 6.2 and 10.1 times the air value (Ra), and with a mean of 7.8Ra, which are consistent with the mid-ocean ridge basalt values [He-3/He-4 approximate to (6Rasimilar to 11Ra)]. Values for Ne-20/Ne-22 are from 10.7 to 11.3, which are significantly higher than the atmospheric ratio (9.8). And the fluid-inclusion Ar-40/Ar-36 ratios range from 287 to 334, which are close to the atmosperic values (295.5). These results indicate that the noble gases of trapped hydrothermal fluids in massive sulfides are a mixture of mantle- and seawater-derived components, and the helium of fluid inclusions is mainly from mantle, the nelium and argon isotope compositions are mainly from seawater.