Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs

We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [1 (1) over bar0] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable. (C) 2005 American Institute of Physics.

Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires

Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.

Self-organized InAs quantum wires on GaAs (331)A substrates

Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires

Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.

Surface morphology evolution of strained InAs/GaAs(331)a films

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331)A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

GaAs(331)A面InAs自组织纳米结构形貌演化

采用分子束外延方法在CaAs(331)A高指数衬底上制备自对齐InAs纳米线(QWRs)或者三维(3D)岛状结构.InAs纳米线(QWRs)选择性生长在CaAs层的台阶边缘.通过原子力显微镜(AfM)仔细研究了InAs纳米微结构的表面形貌,发现不同的生长条件,包括:衬底温度、生长速率、和InAs层厚度等,对InAa表面形貌有很大的影响.如,低温更容易导致线状纳米微结构的形成,而高温更利于3D岛状结构形成.表面形貌的转变归结于表面能同应变能之间的竞争.

Pr掺杂对Ce_(0.87)Sm_(0.13)O_(2-δ)结构及电性能的影响

采用溶胶-凝胶法合成Ce0.87Sm0.13-xPrxO2-δ(x=0.00,0.01,0.02)氧化物,通过X射线衍射、拉曼光谱、场发射扫描电镜对氧化物进行结构表征,利用交流阻抗谱测试电性能,并讨论了掺杂Pr对Ce0.87Sm0.13O2-δ微观结构和电性能的影响.结果表明,掺入少量Pr3+可减少或消除晶粒表面和晶界处的坑痕或孔隙,增加材料的致密性,从而降低材料的晶界电阻和电极界面电阻以及晶界电阻在总电阻中所占的比例,提高了材料的电导率.

碳酸盐岩风化过程中的U－Th不平衡研究－以黔中、黔北为例

为了进一步获得贵州碳酸盐岩风化成土过程的信息，为测定风化成土速率的研究工作奠定基础，本次研究工作通过U－Th的地球化学特征与主量元素、微量元素、稀土元素的地球化学特征的对比研究以及U－Th不平衡来研究贵州两个碳酸盐岩风化剖面的风化成土过程，并得出以下总体认识： 贵州碳酸盐岩风化剖面中的238U－234U－230Th不平衡说明风化剖面中的U－Th不平衡与风化过程密切相关，与风化壳中矿物和铁壳的演化特征密切相关。风化剖面不仅被简单的持续积累或者滤失过程所控制，而且被每一个土层中的复杂的重组过程所影响。U－Th不平衡也说明风化系统的扰动可能与中更新世晚期的气候变化有关。风化剖面中的U－Th不平衡是由母岩碳酸盐岩的风化、风化流体的溶解作用、表土层中的有机质、铁质结核带中的氧化铁矿物以及伊利石、高岭石等粘土矿物对U、Th的吸附作用、α反冲作用以及微生物的还原作用等共同作用的结果。 具体结论如下： （1）两个风化剖面中的U、Th都在半风化层中相对基岩强烈富集，安顺白云岩风化剖面中U、Th在全风化层中下部富集；而遵义石灰岩风化剖面中的U在全风化层中部富集，Th在全风化层上部富集，然后向表土层逐渐减少。 （2）U、Th在半风化层中相对基岩强烈富集，是因为在半风化层中，基岩中的原生矿物发生溶解、蚀变，生成新的次生粘土矿物伊利石，而伊利石对U、Th具有强烈的吸附能力。风化剖面中U、Th的富集主要与地表水的淋滤作用以及铁壳在进一步的风化过程中溶解释放出其中所富集的U、Th，而U、Th向下重新迁移的过程有关。 （3）风化剖面中U、Th的分布特征说明U、Th的含量与风化过程密切相关，与风化壳中的矿物和铁壳的演化特征密切相关。遵义石灰岩风化剖面中U、Th的淋失程度比安顺白云岩风化剖面中U、Th的淋失程度弱也说明了遵义石灰岩风化剖面的风化程度要低于安顺白云岩风化剖面的风化程度。 （4）安顺白云岩风化剖面中，234U/238U在<1和＞1之间交替变化。除在剖面中部，230Th/238U≈1外，230Th/238U基本上都＞1。 （5）安顺白云岩风化剖面中的238U －234U－230Th不平衡表明：安顺白云岩风化剖面中的U－Th不平衡是母岩碳酸盐岩的风化、风化流体的溶解作用、表土层中的有机质、铁质结核带中的氧化铁矿物以及伊利石、高岭石等粘土矿物对234U、230Th的吸附作用、α反冲作用以及微生物的还原作用等共同作用的结果。 （6）遵义石灰岩风化剖面中234U/238U除少数几个点外，大多数采样点的234U/238U都＜1。除了少数几个点外，大部分230Th/238U＞1。 （7）遵义石灰岩风化剖面中的238U －234U－230Th不平衡表明：234U－238U不平衡主要是由地表水和入渗水的溶解作用以及α反冲作用为主要的控制机制。而风化剖面中230Th－238U不平衡主要是由表土层中的有机质、高岭石、氧化铁矿物以及伊利石对230Th吸附作用和α反冲作用共同作用的结果。 （8）将U的迁移模型应用于本研究中的两个碳酸盐岩风化剖面，说明这两个风化剖面都被U的近期积累或者滤失过程所影响，风化系统处于过渡的不稳定状态，并通过U在风化剖面中的重新迁移将系统带回稳定状态。 （9）由等时线定年法计算出的安顺白云岩风化剖面的年龄范围为：87.0±7.8－479.2±47.9ka；遵义石灰岩风化剖面的年龄范围为：62.3±8.7－353.3±31.8ka。 （10）由等时线定年法可知：两个风化系统将在～1.1Ma达到稳定状态。 （11）碳酸盐岩风化剖面应用U的迁移模型得出的U的迁移过程与风化剖面中主量元素和微量元素的迁移特征相吻合，说明模型的选择是正确的。 （12）整个风化剖面的238U－234U－230Th不平衡说明风化剖面中的U－Th不平衡与风化过程密切相关，与风化壳中矿物和铁壳的演化特征密切相关。风化系统的扰动可能与中更新世晚期的气候变化有关。碳酸盐岩风化剖面被U的近期迁移过程所影响，风化剖面中的每一个单元甚至每一个土样都具有复杂的历史。这些单元或者土样是古老的风化历史和近期的重新迁移过程的叠加。

Resultados de pesquisa de soja 1986/87.

Agrometeorologia; Entomologia; Fertilidade do solo e microbiologia; Fitopatologia; Genetica e melhoramento; Manejo da cultura; Plantas daninhas; Tecnologia de sementes; Metodos quantitativos; Difusao de tecnologia; Informacao e documentacao; Assessoria de imprensa.

Recomendacoes tecnicas para a cultura da soja no Parana 1986/87.

Investimentos em tecnologia: a nova realidade da nova agricultura; Manejo do solo; Clima; Cultivares; Populacao, densidade e epocas de semeadura; Instalacao da lavoura; Controle de plantas daninhas; Manejo de pragas; Controle de doencas; Colheita.

Las temperaturas mínimas en la zona del Alto Valle de Río Negro en el período 1960 - 87

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