4H silicon carbide particle detectors: study of the defects induced by high energy neutron irradiation

During the last decade advances in the field of sensor design and improved base materials have pushed the radiation hardness of the current silicon detector technology to impressive performance. It should allow operation of the tracking systems of the Large Hadron Collider (LHC) experiments at nominal luminosity (1034 cm-2s-1) for about 10 years. The current silicon detectors are unable to cope with such an environment. Silicon carbide (SiC), which has recently been recognized as potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were irradiated with 1 MeV neutrons up to fluence of 1016 cm-2. It is well known that the degradation of the detectors with irradiation, independently of the structure used for their realization, is caused by lattice defects, like creation of point-like defect, dopant deactivation and dead layer formation and that a crucial aspect for the understanding of the defect kinetics at a microscopic level is the correct identification of the crystal defects in terms of their electrical activity. In order to clarify the defect kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different samples irradiated at increasing fluences. The defect evolution was correlated with the transport properties of the irradiated detector, always comparing with the un-irradiated one. The charge collection efficiency degradation of Schottky detectors induced by neutron irradiation was related to the increasing concentration of defects as function of the neutron fluence.

Synthesis and characterization of implants for bone substitutions made of biomedical apatites containing silicon

In the last decades the development of bone substitutes characterized by a superior biomimetism has become of particular interest, owing to the increasing economic and societal impact of the bone diseases. In the present work of research the development of bone substitutes characterized by improved biomimetism, has been faced in a chemical, structural and morphological perspective. From a chemical point of view, it has been developed the synthesis of hydroxyapatite powders, exhibiting multiple ionic substitutions in both cationic and anionic sites, so to simulate the chemical composition of the natural bone. Particular emphasis has been given to the effect of silicon on the chemical-physical and solubility properties of the obtained hydroxyapatites. From a structural point of view, it has been developed the synthesis of ceramic composite materials, based on hydroxyapatite and calcium silicates, employed both as a reinforcing phase, to raise the mechanical strength of the composite compared to hydroxyapatite, and as a bioactive phase, able to increase the bioactivity properties of the whole ceramic. Finally the unique morphological features of the bone were mimicked by taking inspiration by Nature, so that native wood structures were treated in chemical and thermal way to obtain hydroxyapatite porous materials characterized by the same morphology as the native wood. The results obtained in the present work were positive in all the three different areas of investigation, so to cover the three different aspects of biomimetism, chemical, structural and morphological. Anyway, only at the convergence of the three different fields it is possible to find out the best solutions to develop the ideal bone-like scaffold. Thus, the future activity should be devoted to solve the problems at the borderline between the different research lines, which hamper this convergence and in consequence, the achievement of a bone scaffold able to mimic the various aspects exhibited by the bone tissue

Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

Molekulardynamik-Computersimulation einer amorph-kristallinen SiO 2 Grenzschicht

In dieser Arbeit werden Molekulardynamik-Computersimulationen zur Untersuchung der statischen und dynamischen Eigenschaften einer amorph/kristallinen Siliziumdioxid(SiO2)-Grenzschicht durchgefuehrt.Die Grenzflaeche wird von der [100]-Ebene des beta-Kristobalit-Kristalls und der fluessigen SiO2-Phase gebildet und in einem Temperaturbereich zwischen 2900K und 3100K im Zustand eines metastabilen Gleichgewichts untersucht. Als Modellpotential zur Beschreibung der mikroskopischen Wechselwirkungen zwischen den Teilchen wird ein einfaches Paarpotential aus der Literatur verwendet, das sowohl die Struktur der kristallinen Phase als auch die der fluessigen Phase gut reproduziert. Bezogen auf die Dichte und die potentielle Energie der Teilchen erstreckt sich der Uebergang von der fluessigen in die kristalline Phase ueber 3-5 Atomlagen. Ein Layering-Effekt der Dichte in der fluessigen Phase in der Naehe der Grenzschicht wird nicht beobachtet. Der Einfluss der Grenzschicht auf statische Groessen, welche das System auf einer mittelreichweitigen Laengenskala beschreiben (z. B. Koordinationszahlverteilung und Ringverteilung) reicht im Vergleich dazu weiter in die fluessige Phase hinein und manifestiert sich in Defektstrukturen, wie z. B. der Erhoehung der Wahrscheinlichkeit fuer das Auftreten von 5-fach koordiniertem Silizium und der vermehrten Bildung von 2er-Ringen in der Fluessigkeit. Dies beguenstigt das Aufbrechen und Umklappen von Si-O-Bindungen und fuehrt zu einer Beschleunigung der Dynamik und einer Erhoehung der Diffusionsgeschwindigkeit in der Fluessigkeit. Im weiteren wird die Hochfrequenzdynamik der reinen SiO2-Fluessigkeit untersucht. Dazu berechnen wir die vibratorische Zustandsdichte in harmonischer Naeherung aus der inhaerenten Struktur. Wir finden einen stark ausgepraegten Peak bei einer Frequenz von 0.6 THz. Dieser Peak kann der niederenergetischsten transversalen akustischen Mode zugeordnet werden, die auch als Scherschwingung des Systems direkt sichtbar ist.

The incomplete ionization of substitutional dopants in Silicon Carbide

This thesis analyzes theoretically and computationally the phenomenon of partial ionization of the substitutional dopants in Silicon Carbide at thermal equilibrium. It is based on the solution of the charge neutrality equation and takes into account the following phenomena: several energy levels in the bandgap; Fermi-Dirac statistics for free carriers; screening effects on the dopant ionization energies; the formation of impurity bands. A self-consistent model and a corresponding simulation software have been realized. A preliminary comparison of our calculations with existing experimental results is carried out.

Silicon-containing block copolymers with well-defined, branched architectures

In the past decade, block copolymers (BCPs) have attracted increasing scientific and technological interest because of their inherent capability to spontaneously self-assemble into ordered arrays of nanostructures. The importance of nanostructures in a number of applications has fostered the need for well-defined, complex macromolecular architectures. In this thesis, the influence of macromolecular architecture on the bulk morphologies of novel linear-hyperbranched and linear brush-like diblock copolymer structure is investigated. An innovative, generally applicable strategy for the preparation of these defined diblock copolymers, consisting of linear polystyrene and branched polycarbosilane blocks, is demonstrated. Furthermore, complete characterization and solid-state morphological studies are provided. Finally, the concept is extended to linear-hyperbrached and linear brush-like polyalkoxysilanes. A shift of the classical phase boundaries to higher PS weight fractions as well as the appearance of new morphologies confirms the dramatic effect that polymer topology has on the morphology of BCPs.

From polymer precursors to metal oxides

We report on a strategy to prepare metal oxides including binary oxide and mixed metal oxide (MMO) in form of nanometer-sized particles using polymer as precursor. Zinc oxide nanoparticles are prepared as an example. The obtained zinc polyacrylate precursor is amorphous as confirmed by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The conversion from polymer precursor to ZnO nanocrystals by thermal pyrolysis was investigated by means of XRD, thermogravimetric analysis (TGA) and electron microscopy. The as-synthesized ZnO consists of many individual particles with a diameter around 40 nm as shown by scanning electron microscopy (SEM). The photoluminescence (PL) and electron paramagnetic (EPR) properties of the material are investigated, too. Employing this method, ZnO nanocrystalline films are fabricated via pyrolysis of a zinc polyacrylate precursor film on solid substrate like silicon and quartz glass. The results of XRD, absorption spectra as well as TEM prove that both the ZnO nanopowder and film undergo same evolution process. Comparing the PL properties of films fabricated in different gas atmosphere, it is assigned that the blue emission of the ZnO films is due to crystal defect of zinc vacancy and green emission from oxygen vacancy. Two kinds of ZnO-based mixed metal oxide (Zn1-xMgxO and Zn1-xCoxO) particles with very precise stoichiometry are prepared by controlled pyrolysis of the corresponding polymer precursor at 550 oC. The MMO crystal particles are typically 20-50 nm in diameter. Doping of Mg in ZnO lattice causes shrinkage of lattice parameter c, while it remains unchanged with Co incorporation. Effects of bandgap engineering are seen in the Mg:ZnO system. The photoluminescence in the visible is enhanced by incorporation of magnesium on zinc lattice sites, while the emission is suppressed in the Co:ZnO system. Magnetic property of cobalt doped-ZnO is checked too and ferromagnetic ordering was not found in our samples. An alternative way to prepare zinc oxide nanoparticles is presented upon calcination of zinc-loaded polymer precursors, which is synthesized via inverse miniemulsion polymerization of the mixture of the acrylic acid and zinc nitrate. The as-prepared ZnO product is compared with that obtained from polymer-salt complex method. The obtained ZnO nanoparticles undergo surface modification via a phosphate modifier applying ultrasonication. The morphology of the modified particles is checked by SEM. And stability of the ZnO nanoparticles in aqueous dispersion is enhanced as indicated by the zeta-potential results.

The coupling between electron transfer and Protein/Solvent Dynamics in Photosynthetic Reaction Centers: Spectroscopic Studies in Amorphous Matrices

We investigated at the molecular level protein/solvent interactions and their relevance in protein function through the use of amorphous matrices at room temperature. As a model protein, we used the bacterial photosynthetic reaction center (RC) of Rhodobacter sphaeroides, a pigment protein complex which catalyzes the light-induced charge separation initiating the conversion of solar into chemical energy. The thermal fluctuations of the RC and its dielectric conformational relaxation following photoexcitation have been probed by analyzing the recombination kinetics of the primary charge-separated (P+QA-) state, using time resolved optical and EPR spectroscopies. We have shown that the RC dynamics coupled to this electron transfer process can be progressively inhibited at room temperature by decreasing the water content of RC films or of RC-trehalose glassy matrices. Extensive dehydration of the amorphous matrices inhibits RC relaxation and interconversion among conformational substates to an extent comparable to that attained at cryogenic temperatures in water-glycerol samples. An isopiestic method has been developed to finely tune the hydration level of the system. We have combined FTIR spectral analysis of the combination and association bands of residual water with differential light-minus-dark FTIR and high-field EPR spectroscopy to gain information on thermodynamics of water sorption, and on structure/dynamics of the residual water molecules, of protein residues and of RC cofactors. The following main conclusions were reached: (i) the RC dynamics is slaved to that of the hydration shell; (ii) in dehydrated trehalose glasses inhibition of protein dynamics is most likely mediated by residual water molecules simultaneously bound to protein residues and sugar molecules at the protein-matrix interface; (iii) the local environment of cofactors is not involved in the conformational dynamics which stabilizes the P+QA-; (iv) this conformational relaxation appears to be rather delocalized over several aminoacidic residues as well as water molecules weakly hydrogen-bonded to the RC.

Advanced Numerical Simulation of Silicon-Based Solar Cells

Photovoltaic (PV) conversion is the direct production of electrical energy from sun without involving the emission of polluting substances. In order to be competitive with other energy sources, cost of the PV technology must be reduced ensuring adequate conversion efficiencies. These goals have motivated the interest of researchers in investigating advanced designs of crystalline silicon solar (c-Si) cells. Since lowering the cost of PV devices involves the reduction of the volume of semiconductor, an effective light trapping strategy aimed at increasing the photon absorption is required. Modeling of solar cells by electro-optical numerical simulation is helpful to predict the performance of future generations devices exhibiting advanced light-trapping schemes and to provide new and more specific guidelines to industry. The approaches to optical simulation commonly adopted for c-Si solar cells may lead to inaccurate results in case of thin film and nano-stuctured solar cells. On the other hand, rigorous solvers of Maxwell equations are really cpu- and memory-intensive. Recently, in optical simulation of solar cells, the RCWA method has gained relevance, providing a good trade-off between accuracy and computational resources requirement. This thesis is a contribution to the numerical simulation of advanced silicon solar cells by means of a state-of-the-art numerical 2-D/3-D device simulator, that has been successfully applied to the simulation of selective emitter and the rear point contact solar cells, for which the multi-dimensionality of the transport model is required in order to properly account for all physical competing mechanisms. In the second part of the thesis, the optical problems is discussed. Two novel and computationally efficient RCWA implementations for 2-D simulation domains as well as a third RCWA for 3-D structures based on an eigenvalues calculation approach have been presented. The proposed simulators have been validated in terms of accuracy, numerical convergence, computation time and correctness of results.

Development of empirical potentials for amorphous silica

Development of empirical potentials for amorphous silica Amorphous silica (SiO2) is of great importance in geoscience and mineralogy as well as a raw material in glass industry. Its structure is characterized as a disordered continuous network of SiO4 tetrahedra. Many efforts have been undertaken to understand the microscopic properties of silica by classical molecular dynamics (MD) simulations. In this method the interatomic interactions are modeled by an effective potential that does not take explicitely into account the electronic degrees of freedom. In this work, we propose a new methodology to parameterize such a potential for silica using ab initio simulations, namely Car-Parrinello (CP) method [Phys. Rev. Lett. 55, 2471 (1985)]. The new potential proposed is compared to the BKS potential [Phys. Rev. Lett. 64, 1955 (1990)] that is considered as the benchmark potential for silica. First, CP simulations have been performed on a liquid silica sample at 3600 K. The structural features so obtained have been compared to the ones predicted by the classical BKS potential. Regarding the bond lengths the BKS tends to underestimate the Si-O bond whereas the Si-Si bond is overestimated. The inter-tetrahedral angular distribution functions are also not well described by the BKS potential. The corresponding mean value of theSiOSi angle is found to be ≃ 147◦, while the CP yields to aSiOSi angle centered around 135◦. Our aim is to fit a classical Born-Mayer/Coulomb pair potential using ab initio calculations. To this end, we use the force-matching method proposed by Ercolessi and Adams [Europhys. Lett. 26, 583 (1994)]. The CP configurations and their corresponding interatomic forces have been considered for a least square fitting procedure. The classical MD simulations with the resulting potential have lead to a structure that is very different from the CP one. Therefore, a different fitting criterion based on the CP partial pair correlation functions was applied. Using this approach the resulting potential shows a better agreement with the CP data than the BKS ones: pair correlation functions, angular distribution functions, structure factors, density of states and pressure/density were improved. At low temperature, the diffusion coefficients appear to be three times higher than those predicted by the BKS model, however showing a similar temperature dependence. Calculations have also been carried out on crystalline samples in order to check the transferability of the potential. The equilibrium geometry as well as the elastic constants of α-quartz at 0 K are well described by our new potential although the crystalline phases have not been considered for the parameterization. We have developed a new potential for silica which represents an improvement over the pair potentials class proposed so far. Furthermore, the fitting methodology that has been developed in this work can be applied to other network forming systems such as germania as well as mixtures of SiO2 with other oxides (e.g. Al2O3, K2O, Na2O).

Sviluppo, ottimizzazione delle prestazioni e caratterizzazione di materiali compositi a matrice amorfa

Durante l'attività di ricerca sono stati sviluppati tre progetti legati allo sviluppo e ottimizzazione di materiali compositi. In particolare, il primo anno, siamo andati a produrre materiali ceramici ultrarefrattari tenacizzati con fibre di carburo di silicio, riuscendo a migliorare il ciclo produttivo e ottenendo un materiale ottimizzato. Durante il secondo anno di attività ci siamo concentrati nello sviluppo di resine epossidiche rinforzate con particelle di elastomeri florurati che rappresentano un nuovo materiale non presente nel mercato utile per applicazioni meccaniche e navali. L'ultimo anno di ricerca è stato svolto presso il laboratorio materiali di Ansaldo Energia dove è stato studiato il comportamenteo di materiali per turbine a gas.

Test di silicon photomultipliers (sipm) accoppiati a scintillatori

In questa tesi si riportano i risultati di uno studio della risoluzione temporale di un fotomoltiplicatore al Silicio (SiPM). La diffusione di questi rivelatori è in notevole aumento sia nelle ricerche di Fisica Nucleare e Subnucleare che nelle applicazioni mediche. I vantaggi sono legati alla loro insensibilità ai campi magnetici e ai facili modi di operazione (piccoli, robusti e con utilizzo a basso voltaggio). Usati sino ad ora per la misura di cariche, sono oggi di grande interesse per possibili applicazioni che richiedano alta risoluzione temporale (sistemi di tempo di volo, trigger, calorimetria). In questo studio sono stati studiati due tipi diversi di accoppiamento Scintillatore-SiPM: diretto o tramite fibre. Per queste analisi sono stati utilizzati diversi metodi di acquisizione e successivamente si sono incrociati i relativi risultati.

Silicon oxide nitride (sion) films per applicazioni fotovoltaiche

La ricerca, negli ultimi anni, si è concentrata sullo studio di materiali con energy gap più ampio del silicio amorfo a-Si per ridurre gli assorbimenti parassiti all'interno di celle fotovoltaiche ad eterogiunzione. In questo ambito, presso l'Università di Costanza, sono stati depositati layers di silicon oxynitride amorfo a-SiOxNy. Le promettenti aspettative di questo materiale legate all'elevato optical gap, superiore ai 2.0 eV, sono tuttavia ridimensionate dai problemi intrinseci alla struttura amorfa. Infatti la presenza di una grande quantit a di difetti limita fortemente la conducibilita e aumenta gli effetti di degradazione legati alla luce. In quest'ottica, nella presente tesi, sono stati riportati i risultati di analisi spettroscopiche eseguite presso il Dipartimento di Fisica e Astronomia di Bologna su campioni di silicon oxynitride nanocristallino nc-SiOxNy, analisi che hanno lo scopo di osservare come la struttura nanocristallina influisca sulle principali proprieta ottiche e sulla loro dipendenza da alcuni parametri di deposizione.

Variation of stable silicon isotopes: Analytical developments and applications in Precambrian geochemistry

Die vorliegende Dissertation behandelt die Gesamtgesteinsanalyse stabiler Siliziumisotope mit Hilfe einer „Multi Collector-ICP-MS“. Die Analysen fanden in Kooperation mit dem „Royal Museum for Central Africa“ in Belgien statt. Einer der Schwerpunkte des ersten Kapitels ist die erstmalige Analyse des δ30Si –Wertes an einem konventionellen Nu PlasmaTM „Multi-Collector ICP-MS“ Instrument, durch die Eliminierung der den 30Si “peak” überlagernden 14N16O Interferenz. Die Analyse von δ30Si wurde durch technische Modifikationen der Anlage erreicht, welche eine höherer Massenauflösung ermöglichten. Die sorgsame Charakterisierung eines adäquaten Referenzmaterials ist unabdingbar für die Abschätzung der Genauigkeit einer Messung. Die Bestimmung der „U.S. Geological Survey“ Referenzmaterialien bildet den zweiten Schwerpunkt dieses Kapitales. Die Analyse zweier hawaiianischer Standards (BHVO-1 and BHVO-2), belegt die präzise und genaue δ30Si Bestimmung und bietet Vergleichsdaten als Qualitätskontrolle für andere Labore. Das zweite Kapitel befasst sich mit kombinierter Silizium-/Sauerstoffisotope zur Untersuchung der Entstehung der Silizifizierung vulkanischer Gesteine des „Barberton Greenstone Belt“, Südafrika. Im Gegensatz zu heute, war die Silizifizierung der Oberflächennahen Schichten, einschließlich der „Chert“ Bildung, weitverbreitete Prozesse am präkambrischen Ozeanboden. Diese Horizonte sind Zeugen einer extremen Siliziummobilisierung in der Frühzeit der Erde. Dieses Kapitel behandelt die Analyse von Silizium- und Sauerstoffisotopen an drei unterschiedlichen Gesteinsprofilen mit unterschiedlich stark silizifizierten Basalten und überlagernden geschichteten „Cherts“ der 3.54, 3.45 und 3.33 Mill. Jr. alten Theespruit, Kromberg und Hooggenoeg Formationen. Siliziumisotope, Sauerstoffisotope und die SiO2-Gehalte demonstrieren in allen drei Gesteinsprofilen eine positive Korrelation mit dem Silizifizierungsgrad, jedoch mit unterschiedlichen Steigungen der δ30Si-δ18O-Verhältnisse. Meerwasser wird als Quelle des Siliziums für den Silizifizierungsprozess betrachtet. Berechnungen haben gezeigt, dass eine klassische Wasser-Gestein Wechselwirkung die Siliziumisotopenvariation nicht beeinflussen kann, da die Konzentration von Si im Meerwasser zu gering ist (49 ppm). Die Daten stimmen mit einer Zwei-Endglieder-Komponentenmischung überein, mit Basalt und „Chert“ als jeweilige Endglieder. Unsere gegenwärtigen Daten an den „Cherts“ bestätigen einen Anstieg der Isotopenzusammensetzung über der Zeit. Mögliche Faktoren, die für unterschiedliche Steigungen der δ30Si-δ18O Verhältnisse verantwortlich sein könnten sind Veränderungen in der Meerwasserisotopie, der Wassertemperatur oder sekundäre Alterationseffekte. Das letzte Kapitel beinhaltet potentielle Variationen in der Quellregion archaischer Granitoide: die Si-Isotopen Perspektive. Natriumhaltige Tonalit-Trondhjemit-Granodiorit (TTG) Intrusiva repräsentieren große Anteile der archaischen Kruste. Im Gegensatz dazu ist die heutige Kruste kaliumhaltiger (GMS-Gruppe: Granit-Monzonite-Syenite). Prozesse, die zu dem Wechsel von natriumhaltiger zu kaliumhaltiger Kruste führten sind die Thematik diesen Kapitels. Siliziumisotopenmessungen wurden hier kombiniert mit Haupt- und Spurenelementanalysen an unterschiedlichen Generationen der 3.55 bis 3.10 Mill. Yr. alten TTG und GMS Intrusiva aus dem Arbeitsgebiet. Die δ30Si-Werte in den unterschiedlichen Plutonit Generationen zeigen einen leichten Anstieg der Isotopie mit der Zeit, wobei natriumhaltige Intrusiva die niedrigste Si-Isotopenzusammensetzung aufweisen. Der leichte Anstieg in der Siliziumisotopenzusammensetzung über die Zeit könnte auf unterschiedliche Temperaturbedingungen in der Quellregion der Granitoide hinweisen. Die Entstehung von Na-reichen, leichten d30Si Granitoiden würde demnach bei höheren Temperaturen erfolgen. Die Ähnlichkeit der δ30Si-Werte in archaischen K-reichen Plutoniten und phanerozoischen K-reichen Plutoniten wird ebenfalls deutlich.