Factors affecting leaf morphology: a case study of Ranunculus natans C. A. Mey. (Ranunculaceae) in the arid zone of northwest China

In order to examine the role of environmental factors affecting foliar morphology, we performed a case study of leaf morphological variation of Ranunculus natans found in the arid zone of northwest China. We found that foliar phenotypic variation differed significantly between populations. We described substantial positive correlations between altitude and leaf area (LA) as well as leaf perimeter (LP), and also between longitude and number of teeth, along with dissection index (DI). The pH, conductivity, and salinity of the environment caused a significant decrease in both LA and LP. Ranked in terms of their impacts on leaf morphology, the six selected factors were: altitude > pH > conductivity > salinity > longitude > latitude. We found that foliar morphological variations are functional responses to water-quantity factors (e.g., altitude and longitude at regional scales) and water-availability relation factors (e.g., pH, conductivity, and salinity at local scales), rather than to temperature-relation factors (latitude). Therefore, altitude and longitude, along with pH, conductivity, and salinity, are the main factors that significantly influence foliar morphology in the arid zone of China. We found that main factors played major roles in plant phenotypic plasticity in a complex ecosystem, although different combinations and interactions of environmental and geographical factors in each local environment may obscure the general trends in trait changes along environmental gradients.

Characterization and deformation response of orthotropic fibre networks with auxetic out-of-plane behaviour

In the present paper, highly porous fibre networks made of 316L fibres, with different fibre volume fractions, are characterized in terms of network architecture, elastic constants and fracture energies. Elastic constants are measured using quasi-static mechanical and modal vibration testing, yielding local and globally averaged properties, respectively. Differences between quasi-static and dynamic elastic constants are attributed to through-thickness shear effects. Regardless of the method employed, networks show signs of material inhomogeneity at high fibre densities, in agreement with X-ray nanotomography results. Strong auxetic (or negative Poisson's ratio) behaviour is observed in the through-thickness direction, which is attributed to fibre kinking induced during processing. Measured fracture energies are compared with model predictions incorporating information about in-plane fibre orientation distribution, fibre volume fraction and single fibre work of fracture. Experimental values are broadly consistent with model predictions, based on the assumption that this energy is primarily associated with plastic deformation of individual fibres within a process zone of the same order as the inter-joint spacing. © 2013 Published by Elsevier Ltd. on behalf of Acta Materialia Inc. All rights reserved.

Root zone microbial populations, urease activities, and purification efficiency for a constructed wetland

In order to investigate the effects of microorganisms and their urease activities in macrophytic root zones on pollutant removal, four small-scale plots (SSPs) of vertical/reverse-vertical flow wetlands were set up to determine: a) the relationship between the abundance of microorganisms in the root zones and water purification efficiency; and b) the relationship between urease activities in the root zones and pollutant removal in a constructed wetland system. Total numbers of the microbial population (bacteria, fungi, and actinomyces) along with urease activities in the macrophytic root zones were determined. In addition, the relationships between microbial populations and urease activities as well as the wastewater purification efficiencies of total phosphorus (TP), total Kjeldahl nitrogen (TKN), biochemical oxygen demand in 5 days (BOD5), and chemical oxygen demand (COD) were also analyzed. The results showed that there was a highly significant positive correlation (r = 0.9772, P < 0.01) between the number of bacteria in the root zones and BOD5 removal efficiency and a significant negative correlation (r = -0.9092, P < 0.05) between the number of fungi and the removal efficiency of TKN. Meanwhile, there was a significant positive correlation (r = 0.8830, P < 0.05) between urease activities in the root zones and the removal efficiency of TKN. Thus, during wastewater treatment in a constructed wetland system, microorganism and urease activities in the root zones were very important factors.

An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

The influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs. (C) 2009 Elsevier B.V. All rights reserved.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.

Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72 nm. When the thickness of AlN buffer is 36 nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72 nm.

Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors

We investigated the influence of thickness of p-GaN layer on the performance of p-i-n structure GaN ultraviolet photodetector. Through the simulation calculation, it was found that both the quantum efficiency and dark current of device decrease when employing thicker p-GaN layer, while both the quantum efficiency and dark current increase with decreasing thickness of p-GaN layer. It is suggested that the Schottky contact junction between the metal and p-GaN may be responsible for the incompatible effect. We has to make a suitable choice of the thickness of p-GaN in the device design according to the application requirement.

Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes

This paper investigates the dependence of current-voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes (RTDs) on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance (NDR) region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.

Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD

InN thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. Based on the model of mosaic crystal, by means of X-ray diffraction skew geometry scan, the edge dislocation densities of 4.2 x 10(10) cm(-2) and 6.3 x 10(10) cm(-2) are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. The carrier concentrations of 9 x 10(18) cm(-3) and 1.2 x 10(18) cm(-3) are obtained by room temperature Hall effect measurement. V-N is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. By the analysis of S-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. Taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05 meV and 5.58 meV for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(111) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness of HT AlN buffer layer, and the optimized thickness of the HT AlN buffer layer is about 110 nm. Together with the low-temperature (LT) AlN interlayer, high-quality GaN epilayer with low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.

The influence of AlN buffer layer thickness on the properties of GaN epilayer

The influence of low-temperature AlN buffer layer thickness on GaN epilayer was investigated by triple-axis X-ray diffraction (XRD) and photoluminescence measurements. A method was proposed to measure the screw and edge dislocation densities by XRD. It was found that the buffer layer thickness was a key parameter to affect the quality of GaN epilayer and an appropriate thickness resulted in the best structural and optical properties except the lateral grain size. After the thickness exceeding the appropriate value, the compressive stress in the epilayer decreased as the thickness increased, which led to the redshift of the near-band edge luminescence. The experimental results showed the buffer layer thickness had more influence on edge dislocation than screw type and the former was perhaps the main source of the yellow band. (C) 2004 Elsevier B.V. All rights reserved.