Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline

A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.

In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD

The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.

Epitaxial growth of SiC on complex substrates

Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

An augmented method for free boundary problems with moving contact lines

An augmented immersed interface method (IIM) is proposed for simulating one-phase moving contact line problems in which a liquid drop spreads or recoils on a solid substrate. While the present two-dimensional mathematical model is a free boundary problem, in our new numerical method, the fluid domain enclosed by the free boundary is embedded into a rectangular one so that the problem can be solved by a regular Cartesian grid method. We introduce an augmented variable along the free boundary so that the stress balancing boundary condition is satisfied. A hybrid time discretization is used in the projection method for better stability. The resultant Helmholtz/Poisson equations with interfaces then are solved by the IIM in an efficient way. Several numerical tests including an accuracy check, and the spreading and recoiling processes of a liquid drop are presented in detail. (C) 2010 Elsevier Ltd. All rights reserved.

Wurtzite-to-tetragonal structure phase transformation and size effect in ZnO nanorods

The deformation of [0001]-oriented ZnO nanorods with hexagonal cross sections under uniaxial tensile loading is analyzed through molecular statistical thermodynamics (MST) simulations. The focus is on the size dependence of mechanical behavior in ZnO nanorods with diameters ranging from 1.95 to 17.5 nm. An irreversible phase transformation from the wurtzite (P6(3)mc space group) structure to a tetragonal structure (P4(2)/mnm space group) occurs during the tensile loading process. Young's modulus before the transformation demonstrates a size dependence consistent with what is observed in experiments. A stronger size dependence of response is seen after the transformation and is attributed to the polycrystalline nature of the transformed structure. A comparison of the MST and molecular dynamics (MD) methods shows that MST is 60 times faster than MD and yields results consistent with the results of MD.

一种镍基单晶合金的凝固行为

采用等温凝固方法研究了单晶镍基合金的凝固区间,利用DSC测试了合金的凝固曲线.结果表明:实验合金的液相线温度约为1380℃,固相线温度约为1310℃.合金的凝固顺序为: Lγ,L MC;γγ′;Lγ+MC.单晶合金的铸态组织中,W偏析于枝晶干, Ti,Cr,Mo和Ta偏析于枝晶间,偏析程度为: Mo>Ti>Cr>Ta, Al和Co几乎不发生偏析.1314℃1382℃1361℃1325℃

2010年环境力学夏季讲习班简介

<正>2010年环境力学夏季讲习班于8月21日～25日在南京河海大学举办.本次讲习班由国家自然科学基金委员会数理科学部主办,河海大学承办,中国力学学会环境力学专业委员会、美国工程力学学会、江苏省力学学会、海岸灾害及防护教育

System size dependence of associated yields in hadron-triggered jets STAR Collaboration

We present results on the system size dependence of high transverse momentum di-hadron correlations at root s(NN) = 200 GeV as measured by STAR at RHIC. Measurements in d + Au, Cu + Cu and Au + Au collisions reveal similar jet-like near-side correlation yields (correlations at small angular separation Delta phi similar to 0, Delta eta similar to 0) for all systems and centralities. Previous measurements have shown Chat the away-side (Delta phi similar to pi) yield is suppressed in heavy-ion collisions. We present measurements of the away-side Suppression as a function of transverse momentum and centrality in Cu + Cu and Au + Au collisions. The suppression is found to be similar in Cu + Cu and An + An collisions at a similar number of participants. The results are compared to theoretical calculations based on the patron quenching model and the modified fragmentation model. The observed differences between data and theory indicate that the correlated yields presented here will further constrain dynamic energy loss models and provide information about the dynamic density profile in heavy-ion collisions. (C) 2009 Elsevier B.V. All rights reserved.

Measurement of the Bottom Quark Contribution to Nonphotonic Electron Production in p plus p Collisions at root s=200 GeV

The contribution of B meson decays to nonphotonic electrons, which are mainly produced by the semileptonic decays of heavy-flavor mesons, in p + p collisions at root s = 200 GeV has been measured using azimuthal correlations between nonphotonic electrons and hadrons. The extracted B decay contribution is approximately 50% at a transverse momentum of p(T) >= 5 GeV/c. These measurements constrain the nuclear modification factor for electrons from B and D meson decays. The result indicates that B meson production in heavy ion collisions is also suppressed at high p(T).

Higher Moments of Net Proton Multiplicity Distributions at RHIC

200 GeV corresponding to baryon chemical potentials (mu(B)) between 200 and 20 MeV. Our measurements of the products kappa sigma(2) and S sigma, which can be related to theoretical calculations sensitive to baryon number susceptibilities and long-range correlations, are constant as functions of collision centrality. We compare these products with results from lattice QCD and various models without a critical point and study the root s(NN) dependence of kappa sigma(2). From the measurements at the three beam energies, we find no evidence for a critical point in the QCD phase diagram for mu(B) below 200 MeV.

Three-Particle Coincidence of the Long Range Pseudorapidity Correlation in High Energy Nucleus-Nucleus Collisions

We report the first three-particle coincidence measurement in pseudorapidity (Delta eta) between a high transverse momentum (p(perpendicular to)) trigger particle and two lower p(perpendicular to) associated particles within azimuth |Delta phi| < 0.7 in root s(NN) = 200 GeV d + Au and Au + Au collisions. Charge ordering properties are exploited to separate the jetlike component and the ridge (long range Delta eta correlation). The results indicate that the correlation of ridge particles are uniform not only with respect to the trigger particle but also between themselves event by event in our measured Delta eta. In addition, the production of the ridge appears to be uncorrelated to the presence of the narrow jetlike component.