Tunable Ag surface-plasmon-resonance wavelength and its application on the photochromic behavior of TiO2-Ag films

Surface and bulk plasmon resonance of noble metal particles play an essential role in the multicolor photochromism of semiconductor systems containing noble metal particles, Here we examined several key parameters affecting surface plasmon resonance wavelength (SPRW) of Ag particles and investigated the relation between surface plasmon and photochromic reaction wavelength. From the transmission spectra of sandwiched (TiO2/Ag/TiO2) and overcoated (Ag/TiO2) films deposited on quartz substrates at room temperature by rf helicon magnetron sputtering, we demonstrated that the SPRW can be made tunable by changing the surrounding media and thickness of the metal layer. The coloration and bleaching in visible light region due to photochromism were clearly observed for the films inserted with a 0.55 nm Ag layer.

Spectroscopic ellipsometry study of In2O3 thin films

In2O3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 eV. Aside from one amorphous sample prepared at room substrate temperature, polycrystalline In2O3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 A degrees C. Excellent SE fittings were realized by applying 1 and/or 2 terms F&B amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on Bruggeman effective medium approximation for thinner films. Spectral dependent refractive indices and extinction coefficients were obtained for five samples. The curve shapes were well interpreted according to the applied dispersion formulas. Almost similar optical band gap values from 3.76 to 3.84 eV were obtained for five samples by Tauc plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode.

Structural studies of NixFe100-x/Mo magnetic multilayers by x-ray small-angle reflection and high-angle diffraction

Magnetic multilayers [NixFe100-x/Mo-30] grown by dc-magnetron sputtering were investigated by x-ray small-angle reflection and high-angle diffraction. Structural parameters of the multilayers such as the superlattice periods, the interfacial roughness, and interplane distance were obtained. It was found that for our NixFe100-x/Mo system, the Mo layer has bcc structure with [110] preferential orientation, while the preferential orientation of the NixFe100-x layer changes from a fee structure with [111] preferential orientation to a bcc structure with [110] preferential orientation with decreasing values of x. An intermixing layer located in the interlayer region between the NixFe100-x and Mo layers exists in the multilayers, and its thickness is almost invariant with respect to an increase of Mo layer thickness and/or a decrease of x in the region of x greater than or equal to 39. The thickness of the intermixing layer falls to zero when x less than or equal to 23.

A Novel Power Supply Solution of a Passive RFID Transponder

This paper presents a power supply solution for fully integrated passive radio-frequency identification(RFID) transponder IC,which has been implemented in 0.35μm CMOS technology with embedded EEPROM from Chartered Semiconductor.The proposed AC/DC and DC/DC charge pumps can generate stable output for RFID applications with quite low power dissipation and extremely high pumping efficiency.An analytical model of the voltage multiplier,comparison with other charge pumps,simulation results,and chip testing results are presented.

360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals

Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee（PL） from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.

A Wide-Band High-Linearity Down-Conversion Mixer for Cable Receptions

We analyze a wide-band,high-linearity down-conversion mixer for cable receptions that is implemented in 0. 35μm SiGe BiCMOS technology. The bandwidth of the RF （radio frequency） input covers the range from 1 to 1.8GHz. The measured input power at the - 1dB compression point of the mixer reaches ＋ 14.23dBm. The highest voltage conversion gain is 8. 31dB, while the lowest noise figure is 19.4dB. The power consumed is 54mW with a 5V supply. The test result of the down-conversion mixer is outlined.

Monolithically Integrated Optoelectronic Receivers Implemented in 0. 25μm MS/RF CMOS

A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing.

磁控溅射阴极靶磁场分布的定量评价

针对磁控溅射阴极靶磁场分布难以进行定量评价的问题,提出以磁场水平分量Bx的平行率Rk为量化指标,对磁场分布状态进行评价的新方法;采用有限元方法,模拟分析了磁控溅射阴极靶结构参数对磁场分布的影响规律,并利用Rk对结构参数的合理性进行了验证.结果表明,量化指标Rk可以有效地评价磁场分布的优劣,能够为磁场模拟及分析提供基础的科学判据

Beam dynamics design of an RFQ for a planned accelerator, which uses a direct plasma injection scheme

To meet the requirements of providing high-intensity heavy ion beams the direct plasma injection scheme (DPIS) was proposed by a RIKEN-CNS-TIT collaboration. In this scheme a radio frequency quadrupole (RFQ) was joined directly with the laser ion source (LIS) without a low-energy beam transport (LEBT) line. To find the best design of the RFQ that will have short length, high transmission efficiency and small emittance growth, beam dynamics designs with equipartitioning design strategy and with matched-only design strategy have been performed, and a comparison of their results has also been done. Impacts of the input beam parameters on transmission efficiency are presented, too. (C) 2008 Elsevier B.V. All rights reserved.

Effect of substrate and annealing on the structural and optical properties of ZnO:Al films

ZnO:Al thin films with c-axis preferred orientation were deposited on glass and Si substrates using RF magnetron sputtering technique. The effect of substrate on the structural and optical properties of ZnO:Al films were investigated. The results showed a strong blue peak from glass-substrate ZnO:Al film whose intensity became weak when deposited on Si substrate. However, the full width at half maxima (FWHM) of the Si-substrate ZnO:Al (0 0 2) peaks decreased evidently and the grain size increased. Finally, we discussed the influence of annealing temperature on the structural and optical properties of Si-substrate ZnO:Al films. After annealing, the crystal quality of Si-substrate ZnO:Al thin films was markedly improved and the intensity of blue peak (similar to 445 nm) increased noticeably. This observation may indicate that the visible emission properties of the ZnO:Al films are dependent more on the film crystallinity than on the film stoichiometry. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

A Particle-in-cell scheme of the RFQ in the SSC-Linac

A 52 MHz Radio Frequency Quadrupole (RFQ) linear accelerator (linac) is designed to serve as an initial structure for the SSC-Linac system (injector into Separated Sector Cyclotron). The designed injection and output energy are 3.5 keV/u and 143 keV/u, respectively. The beam dynamics in this RFQ have been studied using a three-dimensional Particle-In-Cell (PIC) code BEAMPATH. Simulation results show that this R,FQ structure is characterized by stable values of beam transmission efficiency (at least 95%) for both zero-current mode and the space charge dominated regime. The beam accelerated in the RFQ has good quality in both transverse and longitudinal directions, and could easily be accepted by Drift Tube Linac (DTL). The effect of the vane error and that of the space charge on the beam parameters have been studied as well to define the engineering tolerance for RFQ vane machining and alignment.

Study on shunt impedance and voltage distribution of 4-rod RFQ cavity

A high current RFQ (radio frequency quadrupole) is being studied at the Institute of Modern Physics, CAS for the direct plasma injection scheme. Shunt impedance is air important parameter when designing a 4-rod RFQ cavity, it reflects the RF efficiency of the cavity, and has a direct influence on the cost of the structure. Voltage distribution of a RFQ cavity has an effect on beam transmission, and particles would be lost if the actual voltage distribution is not as what, it should be. The influence of cell length, stern thickness and height on Shunt impedance and voltage distribution have been studied, in particular the effect of projecting electrodes has been investigated in detail.

Drift distance survey in direct plasma injection scheme for high current beam production

In a laser ion source, plasma drift distance is one of the most important design parameters. Ion current density and beam pulse width are defined by plasma drift distance between a laser target and beam extraction position. In direct plasma injection scheme, which uses a laser ion source and a radio frequency quadrupole linac, we can apply relatively higher electric field at beam extraction due to the unique shape of a positively biased electrode. However, when we aim at very high current acceleration such as several tens of milliamperes, we observed mismatched beam extraction conditions. We tested three different ion current at ion extraction region by changing plasma drift distance to study better extraction condition. In this experiment, C6+ beam was accelerated. We confirmed that matching condition can be improved by controlling plasma drift distance.