Ni基电极淀积前后表面处理对p-GaN欧姆接触的影响

在p-GaN上蒸发Ni/Au电极前,采用王水、HCl、缓冲HF进行前表面处理,O_2气氛下退火后,比较各电极样品的I-V特性和表面形貌.结果显示无表面处理时接触电阻最小,且溶剂处理后残留的电解质会影响电极的电流特性和稳定性.用俄歇电子能谱(AES)测试不同元素随深度分布情况,发现高温退火过程中NiO的形成有自动清洁p-GaN表面的作用,因此对于Ni基电极前表面处理不是必需的.再将样品用10%草酸溶液处理,其I-V特性显示接触电阻率明显下降;X射线光电子能谱(XPS)测试显示草酸溶液处理后电极表面Ni含量显著减少,而Au元素信号峰增强,说明表面高阻P型NiO被有效除去,对改善接触性能具有实际意义.

An Integratable Distributed Bragg Reflector Laser by Low-Energy Ion Implantation Induced Quantum Well Intermixing

An integratable distributed Bragg reflector laser is fabricated by low-energy ion implantation induced quantum well intermixing. A 4.6nm quasi-continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.

NiIn（Ge）/n-GaAs欧姆接触的研究

于2010-11-23批量导入