914 resultados para refractive index


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In this paper, identical dual-wavelength fiber Bragg, gratings (FBGs) are theoretically proposed and experimentally demonstrated. On the assistance of the Fourier theory, the gratings with symmetrical spectrum are designed in the case of weak refractive-index modulations. With the. perturbation technique, the results achieved in the previous step are modified to meet the strong refractive-index modulation gratings. Based on the coupled-mode theory, we have optimized and achieved the identical dual-wavelength FBGs with two channels that have equal bandwidth and even strength. We have also experimentally demonstrated the proposed FBGs, and the experimental results are compared with theoretical predictions with good agreement.

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A new type of interferometer, the moving-optical-wedge interferometer, is presented, and its principle and properties are studied. The novel interferometer consists of one beam splitter, two flat fixed mirrors, two fixed compensating plates, one fixed optical wedge, and one moving optical wedge. The optical path difference (OPD) as a function of the displacement of the moving optical wedge from the zero path difference position is accomplished by the straight reciprocating motion of the moving optical wedge. A large physical shift of the moving optical wedge corresponds to a very short OPD value of the new interferometer if the values of the wedge angle and the refractive index of the two optical wedges are given properly. The new interferometer is not so sensitive to the velocity variation of the moving optical wedge and the mechanical disturbances compared with the Michelson interferometer, and it is very applicable to low-spectral-resolution application for any wavenumber region from the far infrared down to the ultraviolet. (C) 2008 Optical Society of America.

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Liquid-filled microstructured polymer optical fibers (MPOFs) as monolithic liquid-core array fiber are proposed and prepared by injecting high-refractive-index liquid into the holes array of the MPOFs. One example for potential applications is demonstrated as a new kind of coherent imaging fiber. It provides great potential for applications in chemical sensing, biosensors, and endoscopy, particularly in bifunctional detection. (C) 2009 Optical Society of America

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By optimizing glass composition and using a multistage dehydration process, a ternary 80TeO(2)-10ZnO-10Na(2)O glass is obtained that shows excellent transparency in the wavelength range from 0.38 mu m up to 6.10 mu m. Based on this optimized composition, we report on the fabrication of a single-mode solid-core tellurite glass fiber with large mode area of 103 mu m(2) and low loss of 0.24 similar to 0.7 dB/m at 1550 nm. By using the continuous-wave self-phase modulation method, the non-resonant nonlinear refractive index n(2) and the effective nonlinear parameter gamma of this made tellurite glass fiber were estimated to be 3.8x10(-1)9 m(2)/W and 10.6 W-1.m(-1) at 1550 nm, respectively. (C) 2009 Optical Society of America

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Time-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of similar to 40 Ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks.

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Based on the n(x, lambda), the calculation of the reflection spectrum for vertical cavity surface emitting lasers shows that the deviation of the central wavelength caused by the change of layer thickness is much more than that caused by the change of AlAs mole fractions. Therefore the control of the MBE growth rate is very important.

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We report on an aluminum oxynitride (AlON) film which was successfully made using the reactiver r.f. sputtering method in an N2-O2 mixture. The fabrication process, atomic components, breakdown field and refractive index of the AlON film are shown in detail. The AlON film is a new polyfilm combining the good properties of Al2O3 and AlN, and it is very interesting with regard to optoelectronic devices and integrated optic circuits.

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Because of Si-Ge interdiffusion in the Si-SiGe interface during the growth process, the square-wave refractive index distribution of a SiGe-Si multiple-quantum-web (MQW) will become smooth. In order to simulate the actual refractive index profile, a staircase approximation is applied. Based on this approach, the dispersion equation of the MQW waveguide is obtained by using a transfer matrix method, The effects of index changes caused by the interdiffusion on the optical field and the characteristics of the photodetector are evaluated by solving the dispersion equation, It is shown that the Si-Ge interdiffusion can result in a reduction of the effective absorption coefficient and the quantum efficiency.

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We derive formulas for the optical confinement factor Gamma from Maxwell's equations for TE and TM modes in the slab waveguide. The numerical results show that the formulas yield correct mode gain for the modes propagating in the waveguide. We also compare the formulas with the standard definition of Gamma as the ratio of power flow in the active region to the total power flow. The results show that the standard definition will underestimate the difference of optical confinement factors between TE and TM modes, and will underestimate the difference of material gains necessary for polarization insensitive semiconductor laser amplifiers. It is important to use correct optical confinement factors for designing polarization insensitive semiconductor laser amplifiers. For vertical cavity surface-emitting lasers, the numerical results show that Gamma can be defined as the proportion of the product of the refractive index and the squared electric field in the active region. (C) 1996 American Institute of physics.

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The nature of optical confinement in phase-locked laser arrays (PLLAs) with a mesa-stripe structure (MSS) has been studied. Two main mechanisms are distinguished, which are based on the variation of the waveguide effective refractive index due to MSS formation and on the refractive index modulation induced by the heating of the structure. Stable operation was achieved when either weak or strong optical coupling was realized in the PLLA. A phase-locked regime of radiation was obtained only for laser diodes with strong optical coupling. In the latter case the angle divergency was not greater than 2 degrees for the antisymmetric supermode emission from the PLLA.

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Square microcavity laser with an output waveguide is proposed and analyzed by the finite-difference time-domain (FDTD) technique. For a square resonator with refractive index of 3.2, side length of 4 microns, and output waveguide of 0.4-micron width, we have got the quality factors (Q factors) of 6.7×10~2 and 7.3×10~3 for the fundamental and first-order transverse magnetic (TM) mode near the wavelength of 1.5 microns, respectively. The simulated intensity distribution for the first-order TM mode shows that the coupling efficiency in the waveguide reaches 53%. The numerical simulation shows that the first-order transverse modes have fairly high Q factor and high coupling efficiency to the output waveguide. Therefore the square resonator with an output waveguide is a promising candidate to realize single-mode directional emission microcavity lasers.

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A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.

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A new technology for fabrication of silica on silicon arrayed waveguide grating (AWG) based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is remained at the side of waveguide.The stress distribution and effective refractive index of waveguide fabricated by this approach are calculated using finite element and finite difference beam propagation method,respectively.The results of these studies indicate that the stress of silica on silicon optical waveguide can be matched in parallel and vertical direction and AWG polarization dependent wavelength (PDλ) can be reduced effectively due to side-silicon layer.

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A novel structure of spot-size converter is designed to allow low loss and large alignment tolerance between single-mode rib waveguide devices and fiber arrays theoretically. The spot-size converter consists of a tapered rib core region and a double-cladding region. Through optimizing parameters,an expanded mode field can be tightly confined in the inner cladding and thus radiation loss be reduced largely at the tapered region. The influence of refractive index and thickness of the inner cladding on coupling loss is analyzed in particular. A novel,easy method of fabricating tapered rib spot-size converter based on silicon-on-insulator material is proposed.

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High power and high-slope efficiency 650nm band real-refractive-index ridge waveguide AlGaInP laser diodes with compressive strained MQW active layer are formed by pure Ar ion beam etching process.Symmetric laser mesas with high perpendicularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching method.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.The typical threshold current of these devices is 46mA at room temperature,and a stable fundamental-mode operation over 40mW is obtained.Very high slope efficiency of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.