Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

Two-dimensional photonic crystals with a large photonic band gap designed by a rapid genetic algorithm

We used Plane Wave Expansion Method and a Rapid Genetic Algorithm to design two-dimensional photonic crystals with a large absolute band gap. A filling fraction controlling operator and Fourier transform data storage mechanism had been integrated into the genetic operators to get desired photonic crystals effectively and efficiently. Starting from randomly generated photonic crystals, the proposed RGA evolved toward the best objectives and yielded a square lattice photonic crystal with the band gap (defined as the gap to mid-gap ratio) as large as 13.25%. Furthermore, the evolutionary objective was modified and resulted in a satisfactory PC for better application to slab system.

Research on the band-gap of InN grown on siticon substrates

Photoluminescence (PL) and absorption experiments were carried out to examine the fundamental band-gap of InN films grown on silicon substrates. A strong PL peak at 0.78 eV was observed at room temperature, which is much lower than the commonly accepted value of 1.9 eV. The integrated PL intensity was found to depend linearly on the excitation laser intensity over a wide intensity range. These results strongly suggest that the observed PL is related to the emission of the fundamental inter-band transitions of InN rather than to deep defect or impurity levels. Due to the effect of band-filling with increasing free electron concentration, the absorption edge shifts to higher energy. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.

hyo-xtm: a set of hyper-graph operations on xml topic map toward knowledge management

Knowledge management is a critical issue for the next-generation web application, because the next-generation web is becoming a semantic web, a knowledge-intensive network. XML Topic Map (XTM), a new standard, is appearing in this field as one of the structures for the semantic web. It organizes information in a way that can be optimized for navigation. In this paper, a new set of hyper-graph operations on XTM (HyO-XTM) is proposed to manage the distributed knowledge resources.HyO-XTM is based on the XTM hyper-graph model. It is well applied upon XTM to simplify the workload of knowledge management.The application of the XTM hyper-graph operations is demonstrated by the knowledge management system of a consulting firm. HyO-XTM shows the potential to lead the knowledge management to the next-generation web.

Logistic Map耦合格子模型模拟环带

本论文采用Logistic Map耦合格子模型对高聚物中特有的环带球晶进行了模拟，所得到的模拟结果与实验结果吻合较好。同时，研究结果能够对实验制备环带球晶样品提供可靠的理论指导。 首先，我们对Logistic Map耦合格子模型及模型中的两个模拟参量μ和ε进行分析，同时结合实验中各种实验条件对聚合物结晶行为的影响，认为Logistic Map的动力学特征与聚合物结晶行为非常相似，并且参量μ与实验中的结晶温度相关，即随温度的升高而减小，而参量ε与实验中影响扩散的因素有关，即随温度的升高而增大、随分子量的增大而减小，并且随样品厚度的增大而增大。我们对模型的整个参数空间进行计算，得到了可以形成环带球晶形貌的参数范围，通过进一步研究发现环带图案的带宽随参量μ的增大而变窄，随参量ε的增大而变宽。上述研究结果与实验中带宽随实验条件的变化规律是一致的。 在得到环带图案的基础上，我们又进一步计算得到了靶状和螺旋状形貌的参量μ和ε的具体取值范围。通过改变μ和ε的参数取值，模拟了环带球晶形貌由靶状过渡到螺旋状的过程，即靶状图案的环带由外层向内层逐渐断裂成较短的条带结构，所有的条带结构呈现出以空间某处为中心团聚在一起的形貌；随后，这种“团聚”的形貌逐渐消失了，空间中小的条带结构的排列呈无序状态。随着参数的进一步变化，短的条带结构变成较长的带状结构，并且这些带状结构的边缘逐渐发生卷曲，最终形成了螺旋状图案。我们还考察了系统初值和耦合方式对上述图案的影响，结果发现，形成环带球晶的参数范围对系统初值没有明显的依赖性，然而靶状和螺旋状图案的分布受初值的影响较大。此外，发现只有采用交替耦合、并考虑长程耦合作用的Logistic Map耦合格子模型才可以得到环带球晶图案。 为了更好地与实验结果进行对比，我们利用Logistic Map耦合格子模型对二维空间中的几种受限体系进行了模拟。（一）对温度梯度场中的环带球晶进行模拟，发现环带球晶在低温处较易成核，向高温处生长，并且，高温处环带的带宽比低温处宽。（二）对格子宽度受限情况进行了模拟，发现随着受限方向的宽度越来越窄，球晶尺寸逐渐变小，相邻两个环带球晶碰撞产生的界线变短，三个相邻环带球晶所形成的界线的交汇点减少。（三）研究了受限边界上的成核作用对狭长格子中环带球晶的影响，结果发现，随着受限边界上成核点密度的不断增加，其形貌转变分为三个不同阶段：①当成核密度稍有增大时，环带球晶数量增加，直径变小；②继续增大边界成核密度，使得大量晶层从受限边界向格子内生长，导致环带球晶的数量减少，直径也减小；③当成核点增加到一定程度时，整个空间中只有极少数由格子内部成核生长且直径非常小的环带球晶，而占主导地位的是由成核点垂直于受限边界生长出的穿透晶层。这些模拟结果均与实验结果相符合。 我们将Logistic Map耦合映象格子模型发展到三维空间格子中，得到了与环带球晶形貌一致的图案，并且其带宽随模拟参量μ的增大而变窄，随ε的增大而变宽。这一规律性结果与二维正方格子的模拟结果是一致的。这一部分的研究结果还表明，边界条件和格子尺寸对模拟结果有显著的影响，周期性边界条件导致在小体积立方格子中只能得到靶状图案；而当格子尺寸很大时，可以得到螺旋状环带球晶的图案。最后，通过调节垂直于薄膜平面方向上的格子数来研究薄膜厚度对环带图案带宽的影响，发现环带的带宽随厚度的增加而变宽，这与实验中环带球晶的带宽随样品厚度的增加而变大的结论是一致的。

A linkage map of common carp (Cyprinus carpio) based on AFLP and microsatellite markers

P>Common carp (Cyprinus carpio) is an important fish for aquaculture, but genomics of this species is still in its infancy. In this study, a linkage map of common carp based on Amplified Fragment Length Polymorphism (AFLP) and microsatellite (SSR) markers has been generated using gynogenetic haploids. Of 926 markers genotyped, 151 (149 AFLPs, two SSRs) were distorted and eliminated from the linkage analyses. A total of 699 AFLP and 20 microsatellite (SSR) markers were assigned to the map, which comprised 64 linkage groups and covered 5506.9 cM Kosambi, with an average interval distance of 7.66 cM Kosambi. The normality tests on interval map distances showed a non-normal marker distribution. Visual inspection of the map distance distribution histogram showed a cluster of interval map distances on the left side of the chart, which suggested the occurrence of AFLP marker clusters. On the other hand, the lack of an obvious cluster on the right side showed that there were a few big gaps which need more markers to bridge. The correlation analysis showed a highly significant relatedness between the length of linkage group and the number of markers, indicating that the AFLP markers in this map were randomly distributed among different linkage groups. This study is helpful for research into the common carp genome and for further studies of genetics and marker-assisted breeding in this species.

GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY

Although metalorganic vapor phase epitaxy (MOVPE) is generally regarded as a non-equillibrium process, it can be assumed that a chemical equilibrium is established at the vapor-solid interface in the diffusion limited region of growth rate. In this paper, an equilibrium model was proposed to calculate the relation between vapor and solid compositions for II-VI ternary alloys. Metastable alloys in the miscibility gap may not be obtained when the growth temperature is lower than the critical temperature of the system. The influence of growth temperature, reactor pressure, input VI/II ratio, and input composition of group VI reactants has been calculated for ZnSSe, ZnSeTe and ZnSTe. The results are compared with experimental data for the ZnSSe and ZnSTe systems.

1ST-PRINCIPLES CALCULATIONS FOR QUASI-PARTICLE ENERGIES OF GAP AND GAAS

We have applied the Green-function method in the GW approximation to calculate quasiparticle energies for the semiconductors GaP and GaAs. Good agreement between the calculated excitation energies and the experimental results was achieved. We obtained calculated direct band gaps of GaP and GaAs of 2.93 and 1.42 eV, respectively, in comparison with the experimental values of 2.90 and 1.52 eV, respectively. An ab initio pseudopotential method has been used to generate basis wave functions and charge densities for calculating the dielectric matrix elements and self-enegies. To evaluate the dynamical effects of the screened interaction, the generalized-plasma-pole model has been utilized to extend the dielectric matrix elements from static results to finite frequencies. We presen the calculated quasiparticle energies at various high-symmetry points of the Brillouin zone and compare them with the experimental results and other calculations.