The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Flying lemurs – The 'flying tree shrews'? Molecular cytogenetic evidence for a Scandentia-Dermoptera sister clade

Background: Flying lemurs or Colugos (order Dermoptera) represent an ancient mammalian lineage that contains only two extant species. Although molecular evidence strongly supports that the orders Dermoptera, Scandentia, Lagomorpha, Rodentia and Primates form a superordinal clade called Supraprimates (or Euarchontoglires), the phylogenetic placement of Dermoptera within Supraprimates remains ambiguous. Results: To search for cytogenetic signatures that could help to clarify the evolutionary affinities within this superordinal group, we have established a genome-wide comparative map between human and the Malayan flying lemur (Galeopterus variegatus) by reciprocal chromosome painting using both human and G. variegatus chromosome-specific probes. The 22 human autosomal paints and the X chromosome paint defined 44 homologous segments in the G. variegatus genome. A putative inversion on GVA 11 was revealed by the hybridization patterns of human chromosome probes 16 and 19. Fifteen associations of human chromosome segments (HSA) were detected in the G. variegatus genome: HSA1/3, 1/10, 2/21, 3/ 21, 4/8, 4/18, 7/15, 7/16, 7/19, 10/16, 12/22 (twice), 14/15, 16/19 (twice). Reverse painting of G. variegatus chromosome-specific paints onto human chromosomes confirmed the above results, and defined the origin of the homologous human chromosomal segments in these associations. In total, G. variegatus paints revealed 49 homologous chromosomal segments in the HSA genome. Conclusion: Comparative analysis of our map with published maps from representative species of other placental orders, including Scandentia, Primates, Lagomorpha and Rodentia, suggests a signature rearrangement (HSA2q/21 association) that links Scandentia and Dermoptera to one sister clade. Our results thus provide new evidence for the hypothesis that Scandentia and Dermoptera have a closer phylogenetic relationship to each other than either of them has to Primates.

Comparative cytogenetics of bats (Chiroptera): The prevalence of Robertsonian translocations limits the power of chromosomal characters in resolving interfamily phylogenetic relationships

Although the monophyly of Chiroptera is well supported by many independent studies, higher-level systematics, e.g. the monophyly of microbats, remains disputed by morphological and molecular studies. Chromosomal rearrangements, as one type of rare genomic changes, have become increasingly popular in phylogenetic studies as alternatives to molecular and other morphological characters. Here, the representatives of families Megadermatidae and Emballonuridae are studied by comparative chromosome painting for the first time. The results have been integrated into published comparative maps, providing an opportunity to assess genome-wide chromosomal homologies between the representatives of eight bat families. Our results further substantiate the wide occurrence of Robertsonian translocations in bats, with the possible involvement of whole-arm reciprocal translocations (WARTs). In order to search for valid cytogenetic signature(s) for each family and superfamily, evolutionary chromosomal rearrangements identified by chromosomal painting and/or banding comparison are subjected to two independent analyses: (1) a cladistic analysis using parsimony and (2) the mapping of these chromosomal changes onto the molecularly defined phylogenetic tree available fromthe literature. Both analyses clearly indicate the prevalence of homoplasic events that reduce the reliability of chromosomal characters for resolving interfamily relationships in bats.

特异性干扰肽对海马突触可塑性的影响及其功能研究

在哺乳动物复杂的神经网络中，突触是信息传递的枢纽，其突触传递效能的持续性变化被称为突触可塑性（synaptic plasticity）。长时程增强（long-term potentiation，LTP）和长时程抑制（long-term depression，LTD）现象是两种经典的突触可塑性形式，被视作学习和记忆可能的物质基础，得到了广泛地关注。其中，海马CA1区谷氨酸能突触处的LTP和LTD目前研究得最为广泛。 α-amino-3-hydroxy-5-methyl-4-isoxazole propionic acid（AMPA）受体作为介导兴奋性谷氨酸能突触基础传递的主要受体，是海马CA1区LTP和LTD正常表达的必要条件。近期的研究表明，AMPA受体通过胞吞、胞吐及侧向移动等方式在细胞膜和细胞内进行着持续地循环。因此，通过调节AMPA受体的上、下膜，进而影响突触后膜上AMPA受体的数量，便能对LTP和LTD产生影响。在本研究中，我们利用生物信息学的手段，以AMPA受体为靶点，设计出了旨在特异阻断LTP或LTD的多肽。运用离体脑片全细胞记录方式，在海马CA1区证明了干扰肽Pep-A2能够特异地阻断LTP而不影响LTD，Pep-A3能够特异地阻断LTD而不影响LTP。并初步探究了其关键的作用位点，为进一步理解LTP和LTD具体的分子机理打下了基础。成瘾作为异常的学习记忆过程，势必涉及到突触可塑性的变化。而特异性地阻断LTP和LTD，对药物成瘾效果的影响却鲜有报道（Wang YT，2007）。在另一部分工作中，我们采用穿膜肽Tat-A2和Tat-A3，在吗啡条件化位置偏爱（morphine conditioned place preference，morphine CPP）模型小鼠的测试前进行系统给药，结果发现两种干扰肽均能阻断或损伤其CPP的表达过程。这一现象，提示我们LTP和LTD在条件化位置偏爱的表达过程中都是不可或缺的，同时也为人们更好地理解成瘾过程的机理，及开发专一有效的治疗药物提供了新的思路。

海马环路中的组合突触可塑性与大鼠情绪研究

海马在某些类型的学习和记忆中起着关键的作用，而突触可塑性（synaptic plasticity）为学习和记忆的模型提供了理论基础。在海马环路中，分布着各种类型的可塑性，包括突触特异的Hebbian形式的可塑性，如长时程增强（long-term potentiation，LTP）和长时程抑制（long-term depression，LTD）；稳态可塑性（homeostatic plasticity），如突触缩放（synaptic scaling）。稳态可塑性是一种整体的调控过程，它可以调节神经元甚至神经网络的平衡；而Hebbian可塑性则是突触特异的，即每个突触进行单独调控的过程。 越来越多的研究提示稳态可塑性和Hebbian可塑性之间存在着空间间隙（spatial gap），那么，如何使得神经元可以通过Hebbian可塑性的过程来维持细胞整体的兴奋性就变得尤为重要。一些报道揭示了LTP和LTD可以在同一突触通路中同时被激活，因此，我们提出组合突触可塑性的概念，即LTP和LTD的组合，它在赋予系统灵活性的同时又可以降低噪音维持系统的稳定性。基于此，本文将围绕这个问题而开展实验工作。 通过对海马CA1区锥体神经元的微小兴奋性突触后电流（miniature excitatory synaptic current, mEPSC）进行测定分析，我们发现mEPSC的幅度分布符合双峰正态分布（double-peak normal distribution）。Theta节律刺激（theta burst stimuli, TBS）诱导后，mEPSC的幅度分布发生改变，呈现右移趋势。随后，采用干扰肽Pep-A2特异地阻断LTP而不影响LTD，我们发现Pep-A2不影响基础状态下mEPSC的幅度分布。在干扰肽Pep-A2存在下，TBS诱导对基础状态下mEPSC的幅度分布也没有影响。结果为揭示LTP和LTD的组合可塑性提供了初步的证据，对进一步理解记忆的编码过程提供了一定的基础。社交隔离可以引起实验大鼠产生焦虑样和抑郁样的行为，而性经历可以改变动物的情绪状态，降低焦虑样和抑郁样的反应。然而，性经历后进行社交隔离对大鼠情绪的影响并没有报道。在这部分工作中，雄性大鼠经历一周的社交活动（male-male paired housing）或者性活动（male-female paired housing），随后进行一段时间的隔离（1天，2天或者7天）。我们发现，经历过性活动的大鼠，无论隔离与否都表现出相似的情绪反应，包括焦虑样和抑郁样行为以及超声波（ultrasonic vocalizations，USVs）发放；而未经历过性活动的大鼠，其情绪反应随着隔离时间的不同而不同。这一现象提示我们，先前的性经历可以对抗实验动物对环境应激事件，如社交隔离的反应。

Ⅰ、新生期触觉刺激和短时间母婴分离经历对大鼠成年后学习记忆的影响 Ⅱ、银杏叶提取物对育亨宾所致大鼠空间工作记忆障碍的改善作用

本研究探讨了新生期的触觉刺激（tactile stimulation，TS）和母婴分离（maternal separation，MS）经历对大鼠成年后空间工作记忆和空间参考记忆的影响，以及对海马-前额叶神经通路的突触可塑性产生的效应。Wistar品系的母鼠分娩后，以split-litter方法对仔鼠进行分组：NTS组的仔鼠不接受触觉刺激和母婴分离；TS组的仔鼠在出生后第2-9天（postnatal day 2-9，PND2-9），或者PND10-17内，每天接受短暂（约30s）的人为抓握，并进行体表标记；TS/MS组的仔鼠在PND2-9，或者PND10-17内，接受TS组相同方式的抓握并在不同体表部位进行标记后，被单独地放入一个杯子中，杯中有取自鼠巢的垫料，每天与母鼠分离1h后返回鼠巢。按照常规方法饲养这些在新生期有不同经历的大鼠，待其成年后（3月龄），采用交互延缓作业（纠正错误法和不纠正错误法）、空间分辨作业及反转学习作业测试雄性大鼠的学习记忆功能，并观察多巴胺D1受体激动剂A77636对不同组成年雄鼠的工作记忆是否产生影响。采用活体电生理方法，高频刺激海马腹侧部在前额叶记录突触效能长时程增强（long-term potentiation，LTP），对PND2-9有不同经历的成年大鼠（雌雄兼用）的海马-前额叶LTP进行比较。 结果：（1）各组仔鼠间在PND30、PND60和PND90的体重都没有显著性差异，表明本研究中的新生期TS处理和MS处理不影响仔鼠的体重发育。 （2）在交互延缓作业-纠正错误法中，各组成年雄鼠在0s延缓期的达标天数没有显著性差异；0s延缓期达标后，再经过30天的训练，PND2-9TS组和PND10-17TS组的成年雄鼠达到的最长延缓期明显高于NTS组，而且在30s—50s延缓期内达标（正确率≥86.7%）的大鼠数量明显较多（与NTS组相比）。采用交互延缓作业-不纠正错误法，各组成年雄鼠在0s延缓期的训练成绩没有显著性差异，但是，PND2-9TS组和PND10-17TS组的成年雄鼠在40s延缓期的训练正确率明显高于NTS组，表明新生期的TS处理明显改善成年雄性大鼠成年后的空间工作记忆。 （3）各组成年雄鼠在空间分辨作业及反转学习作业中的成绩没有明显差异，表明新生期TS经历对雄鼠成年后空间学习记忆的影响是任务依赖性的：与前额叶有关的空间工作记忆功能比较容易受到新生期TS经历的影响，而空间参考记忆相对不容易受到新生期TS经历的影响。 （4）多巴胺D1受体激动剂A77636只有1个剂量（0.1mg/kg）对NTS组成年雄鼠的交互延缓作业成绩具有明显的改善效应。对PND2-9TS组成年雄鼠的交互延缓作业成绩，A77636的0.1mg/kg和1mg/kg剂量都具有明显改善效应。对PND10-17TS组成年雄鼠的交互延缓作业成绩，A77636的0.01mg/kg、0.1mg/kg和1mg/kg剂量都具有明显改善效应。与NTS组相比，A77636对这2个TS组成年雄性大鼠的有效改善剂量范围较宽，提示新生期TS处理经历对雄性大鼠成年后空间工作记忆的改善效应与其前额叶的多巴胺D1受体功能上调有关。 （5）与NTS组相比，PND2-9TS组雄性和雌性成年大鼠的海马-前额叶神经通路的LTP幅度都明显增加。由于海马-前额叶神经通路在空间工作记忆功能中起重要作用，新生期TS经历增强大鼠成年后的海马-前额叶神经通路的突触可塑性，为新生期TS经历增强大鼠成年后的空间工作记忆提供了电生理学的证据。TS成年大鼠海马-前额叶LTP增强可能与其前额叶的D1受体功能上调有关。 （6）本研究中，TS/MS组的新生期仔鼠在PND2-9或者PND10-17内，除了接受与TS组相同方式的抓握并在不同部位标记外，每天与母鼠分离1h，因此通过不同日龄段的TS/MS组与TS组的比较，拟对新生期MS处理的效应进行评估。结果发现，无论是对成年雄性大鼠的各项行为测试（空间分辨作业、交互延缓作业、A77636影响交互延缓作业的量效曲线），还是对成年雌性大鼠的行为测试（明/暗箱作业、一次性被动回避反应，论文Ⅱ），或者对海马-前额叶神经通路的LTP，新生期的MS处理对本研究中的所有测试指标在统计上都没有显著性的差异，说明新生期每天1h的母婴分离经历对大鼠成年后的学习记忆等行为及前额叶突触可塑性没有产生明显的影响，对前额叶D1受体功能也没有明显影响。 （7）对所有测试指标，本研究采用的2个仔鼠日龄段PND2-9和PND10-17之间的统计比较没有明显差异，提示PND2-9和PND10-17甚至整个泌乳期都是仔鼠神经系统对外界环境刺激比较敏感的发育关键期。 结论：新生期的触觉刺激经历改善雄性大鼠成年后的空间工作记忆，增强海马-前额叶神经通路的突触可塑性和前额叶D1受体功能；新生期短时间的母婴分离经历对大鼠成年后的空间工作记忆和前额叶突触可塑性等没有产生明显的影响，可能具有一定的生物学适应意义。

Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more in atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques

In this work we investigate the lateral periodicity of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of X-ray scattering techniques. The multilayers were grown by metalorganic Vapour phase epitaxy on (001)GaAs substrates, which were intentionally off-oriented towards the [011]-direction. The substrate off-orientation and the strain distribution was found to affect the structural properties of the superlattices inducing the generation of laterally ordered macrosteps. Several high-resolution triple-crystal reciprocal space maps, which were recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction and contour maps of the specular reflected beam collected in the vicinity of the (000) reciprocal lattice point, are reported and discussed. The reciprocal space maps clearly show a two-dimensional periodicity of the X-ray peak intensity distribution which can be ascribed to the superlattice periodicity in the direction of the surface normal and to a lateral periodicity in a crystallographic direction coinciding with the miscut orientation. The distribution and correlation of the vertical as well as of the lateral interface roughness was investigated by specular reflectivity and diffuse scattering measurements. Our results show that the morphology of the roughness is influenced by the off-orientation angle and can be described by a 2-dimensional waviness.

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

Choice of calibration equations of the TSM method

For the reciprocal-test fixtures, there are six independent S-parameters to. be determined, and the thru-short-match (TSM) calibration can provide eight calibration equations. In this paper, the relation of calibration equations is investigated. It has been shown that the four equations obtained from the measurement with a transmission standard can be used simultaneously in the calibration. Experimental results show that the different choice of equations will lead to quite different solution, and the calibration accuracy can be improved by taking advantages of the established relation among the calibration equations and properly choosing calibration equations.

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure. (C) 2004 Elsevier B.V. All rights reserved.

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.