中国的鲌属和红鲌属鱼类的研究

<正> 一、绪言关于中国淡水鱼类的研究,如果从C.Linnaeus的记载算起,至今已超过一个半世纪了。在这个时期内,特别是前100年,全部工作几乎只限于种类的筒单描述。进行这些工作的鱼类学者,大抵都是外国人,他们绝大多数没有到过中国,一般仅凭从中国采得的少数标本,予以鉴定研究。个别早期作者,甚至往往只根据一幅鱼的绘图,就进行描述鉴定,创立新种。到二十世纪三十年代,才有我国学者从事本国鱼类的研究,开始比较系统的在全国一些主要河流进行鱼类调查。到四十年代止,可以说除边远地区外,我国的主要经济鱼类资源基本上都有

A new genus and species of freshwater monostiliferous hoplonemertean (Nemertea, Enopla) from the People's Republic of China

A new genus and species of freshwater monostiliferous hoplonemertean, Limnemertes poyangensis gen. et sp. nov., from Poyang Lake, People's Republic of China, is described and illustrated. The taxon is compared and contrasted with previously described freshwater hoplonemerteans. This is the fourth species of freshwater nemertean to be described from China and the first recorded from Poyang Lake.

Hole Spin Relaxation in an Ultrathin InAs Monolayer

We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (tau(1h) = 196 +/- 17 ps) that is in the magnitude similar to electrons (tau(1e) = 354 +/- 32 ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.

Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode vertical bar non-aqueous electrolyte

Electrolyte electroreflectance spectra of the near-surface strained-layer In0.15Ga0.85As/GaAs double single-quantum-well electrode have been studied at different biases in non-aqueous solutions of ferrocene and acetylferrocene. The optical transitions, the Franz-Keldysh oscillations (FKOs) and the quantum confined Stark effects (QCSE) of In0.15Ga0.85As/GaAs quantum well electrodes are analyzed. Electric field strengths at the In0.15Ga0.85As/GaAs interface are calculated in both solutions by a fast Fourier transform analysis of FKOs. A dip is exhibited in the electric field strength versus bias (from 0 to 1.2 V) curve in ferrocene solution. A model concerning the interfacial tunneling transfer of electrons is used to explain the behavior of the electric field. (C) 2001 Elsevier Science B.V. All rights reserved.

Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates

The effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have been investigated by molecular beam epitaxy (MBE). A comparison between atomic force microscopy (AFM) and photoluminescence (PL) spectra shows that a high density of smaller InAs islands can be obtained by using such high index substrates. On the other hand, by introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs can be much more uniform in size and have a great improvement in PL properties. More importantly, 1.55-mu m luminescence at room temperature (RT) can be realized in InAs QDs deposited on (001) InP substrate with underlying In0.52Al0.24Ga0.24As layer. (C) 2000 Elsevier Science B.V. All rights reserved.

Study on the oxygen concentration reduction in heavily Sb-doped silicon

It was determined that oxygen concentration in heavily Sb-doped silicon was about 40% lower than that in the lightly doped Czochralski grown silicon and decreased with increasing content of Sb by means of coincident elastic recoil detection analysis. Through thermodynamic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of SiO, and Sb2O3 evaporation can be neglected. The basic reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when element Sb with larger radius doped degenerately into silicon crystal. (C) 1999 Elsevier Science B.V. All rights reserved.

AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD

A novel AlGaN/GaN/GaN/GaN double heterojunction high electron mobility transistors (DH-HEMTS) structure with an AlN interlayer on sapphire substrate has been grown by MOCVD. The structure featured a 6-10 nm In0.1Ga0.9N layer inserted between the GaN channel and GaN buffer. And wer also inserted one ultrathin. AlN interlayer into the Al/GaN/GaN interface, which significantly enhanced the mobility of two-dimensional electron gas (2DEG) existed in the GaN channel. AFM result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu m x 5 mu m. Temperature dependent Hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/Vs at room temperature (RT) was obtained. The sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 Omega/sq was achieved. The mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.

Synthesis of GaN nanorods with vertebra-like morphology

GaN nanorods with vertebra-like morphology were synthesized by nitriding Ga2O3/ZnO films at 1000 degrees C for 20min. Ga2O3 thin films and ZnO middle layers were pre-deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. In the flowing ammonia ambient, ZnO was reducted to Zn and Zu sublimated at 1000 degrees C. Ga2O3 was reducted to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods in the help of the sublimation of Zn. The structure and morphology of the nanorods were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), The composition of GaN nanorods was studied by energy dispersive spectroscopy (EDS) and fourier transform infrared (FTIR) system.

基于工作流的网上协同办公系统的设计与实现

在简单介绍工作流管理系统一般概念的基础上,重点介绍了基于工作流技术实现的网上协同办公系统的体系结构、系统主要组成部分、各部门的实现方法以及需要注意的事项。

基于RTI的车辆定位仿真系统数据传输研究

目前分布式体系结构的研究重点是提高系统的可扩展性、互操作性和可重用性，而对于实时性要求高的分布式仿真系统，还需要在HLA体系结构基础上，考虑如何提高系统的数据传输效率，以满足实时性要求。本文从应用层角度出发，从以下两个方面研究了改进策略： 一，从数据交互方面考虑，为了提高分布式仿真系统内部有效数据传输效率，满足系统实时性要求，以车辆定位仿真系统为问题原型，提出一种基于运行时间支撑系统数据分发管理（RTI-DDM）和套接字(Socket)的双层数据传输模型：一方面利用RTI-DDM来限定传输数据的范围，依据待交互的数据值域对数据的发送和接收进行过滤，有效降低系统内部冗余数据的传输；另一方面，利用Socket技术在仿真实体之间建立点对点的直接传输，从而提高系统的运行效率。对比实验结果表明，在相同的仿真交互数据量下，该模型相对于传统单层RTI数据传输模型，数据传输延时平均缩短70%。 二，从时间管理方面考虑，本文通过实验验证的方法，分析不同时间管理策略对仿真系统的数据传输和运行控制的影响，并针对车辆定位仿真系统中联邦成员之间的数据交互和逻辑控制关系特点，选择合适的时间管理策略，保证数据因果关系的正确性，进一步提高了系统的数据传输性能。 实验和应用结果表明，本文提出的改进策略简单有效，提高了系统数据传输效率，较好的解决了基于HLA/RTI的定位仿真系统的实时性问题。

家居设计系统中基于辅助射线的房间搜索算法

在家居设计系统中,房间的搜索是一个重要的问题,它是正确显示二维户型图以及生成三维虚拟房间的关键。论文以虚拟家居设计系统为应用背景,分析了家居设计过程中房间拓扑图到户型图的转换过程,通过引入辅助射线的概念,提出了一种规范化房间搜索算法,并用图论的理论加以形式化,该算法可以正确地搜索并绘制出房间。该算法在实际应用中取得了较好的效果。

石化企业MES数据集成平台的设计与实现

论文结合石化企业的数据组织现状和应用需求,提出了由数据转换层、数据集成层和数据接口层组成的石化企业数据集成平台的三层体系结构,三层体系结构的划分使得数据集成平台具有良好的开放性和可扩展性。设计了基于消息中间件、XML技术和适配器技术的数据集成平台的技术架构。论文提供了一个石化企业数据集成平台的整体解决方案,它对企业数据集成平台的建立具有很大的指导意义。