Accurate Indoor Positioning of Firefighters using Dual Foot-mounted Inertial Sensors and Inter-agent Ranging

A real-time cooperative localization system, utilizing dual foot-mounted low-cost inertial sensors and RF-based inter-agent ranging, has been developed. Scenario-based tests have been performed, using fully-equipped firefighters mimicking a search operation in a partly smoke-filled environment, to evaluate the performance of the TOR (Tactical lOcatoR) system. The performed tests included realistic firefighter movements and inter-agent distances, factors that are crucial in order to provide realistic evaluations of the expected performance in real-world operations. The tests indicate that the TOR system may be able to provide a position accuracy of approximately two to three meters during realistic firefighter operations, with only two smoke diving firefighters and one supervising firefighter within range.

Training-Based Antenna Selection for PER Minimization: A POMDP Approach

This paper considers the problem of receive antenna selection (AS) in a multiple-antenna communication system having a single radio-frequency (RF) chain. The AS decisions are based on noisy channel estimates obtained using known pilot symbols embedded in the data packets. The goal here is to minimize the average packet error rate (PER) by exploiting the known temporal correlation of the channel. As the underlying channels are only partially observed using the pilot symbols, the problem of AS for PER minimization is cast into a partially observable Markov decision process (POMDP) framework. Under mild assumptions, the optimality of a myopic policy is established for the two-state channel case. Moreover, two heuristic AS schemes are proposed based on a weighted combination of the estimated channel states on the different antennas. These schemes utilize the continuous valued received pilot symbols to make the AS decisions, and are shown to offer performance comparable to the POMDP approach, which requires one to quantize the channel and observations to a finite set of states. The performance improvement offered by the POMDP solution and the proposed heuristic solutions relative to existing AS training-based approaches is illustrated using Monte Carlo simulations.

Part I: High-Voltage MOS Device Design for Improved Static and RF Performance

In this paper, for the first time, the key design parameters of a shallow trench isolation-based drain-extended MOS transistor are discussed for RF power applications in advanced CMOS technologies. The tradeoff between various dc and RF figures of merit (FoMs) is carefully studied using well-calibrated TCAD simulations. This detailed physical insight is used to optimize the dc and RF behavior, and our work also provides a design window for the improvement of dc as well as RF FoMs, without affecting the breakdown voltage. An improvement of 50% in R-ON and 45% in RF gain is achieved at 1 GHz. Large-signal time-domain analysis is done to explore the output power capability of the device.

Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness

In this paper, we report drain-extended MOS device design guidelines for the RF power amplifier (RF PA) applications. A complete RF PA circuit in a 28-nm CMOS technology node with the matching and biasing network is used as a test vehicle to validate the RF performance improvement by a systematic device design. A complete RF PA with 0.16-W/mm power density is reported experimentally. By simultaneous improvement of device-circuit performance, 45% improvement in the circuit RF power gain, 25% improvement in the power-added efficiency at 1-GHz frequency, and 5x improvement in the electrostatic discharge robustness are reported experimentally.

Fin-Enabled-Area-Scaled Tunnel FET

While keeping the technological evolution and commercialization of FinFET technology in mind, this paper discloses a novel concept that enables area-scaled or vertical tunneling in Fin-based technologies. The concept provides a roadmap for beyond FinFET technologies, while enjoying the advantages of FinFET-like structure without demanding technological abruptness from the existing FinFET technology nodes to beyond FinFET nodes. The proposed device at 10-nm gate length, when compared with the conventional vertical tunneling FET or planar area-scaled device, offers 100% improvement in the ON-current, 15x reduction in the OFF-current, 3x increase in the transconductance, 30% improvement in the output resistance, 55% improvement in the unity gain frequency, and more importantly 6x reduction in the footprint area for a given drive capability. Furthermore, the proposed device brings the average and minimum subthreshold slope down to 40 and 11 mV/decade at 10-nm gate length. This gives a path for beyond FinFET system-on-chip applications, while enjoying the analog, digital, and RF performance improvements.

RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization

Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 degrees C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod)(3)), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod)(4)), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films. (C) 2015 Elsevier B.V. All rights reserved.

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

On the Capacity and Performance of Generalized Spatial Modulation

Generalized spatial modulation (GSM) uses N antenna elements but fewer radio frequency (RF) chains (R) at the transmitter. In GSM, apart from conveying information bits through R modulation symbols, information bits are also conveyed through the indices of the R active transmit antennas. In this letter, we derive lower and upper bounds on the the capacity of a (N, M, R)-GSM MIMO system, where M is the number of receive antennas. Further, we propose a computationally efficient GSM encoding method and a message passing-based low-complexity detection algorithm suited for large-scale GSM-MIMO systems.

Numerical Analysis of Theoretical Model of the Rf MEMs Switches

An improved electromechanical model of the RF MEMS (radio frequency microelectromechanical systems) switches is introduced, in which the effects of intrinsic residual stress from fabrication processes, axial stress due to stretching of beam, and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model. A semi-analytical method is developed to calculate the behavior of the RF MEMS switches. Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared, and the corresponding analysis with the dimensionless numbers is conducted too. The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given.

A quality-guided displacement tracking algorithm for ultrasonic elasticity imaging.

Displacement estimation is a key step in the evaluation of tissue elasticity by quasistatic strain imaging. An efficient approach may incorporate a tracking strategy whereby each estimate is initially obtained from its neighbours' displacements and then refined through a localized search. This increases the accuracy and reduces the computational expense compared with exhaustive search. However, simple tracking strategies fail when the target displacement map exhibits complex structure. For example, there may be discontinuities and regions of indeterminate displacement caused by decorrelation between the pre- and post-deformation radio frequency (RF) echo signals. This paper introduces a novel displacement tracking algorithm, with a search strategy guided by a data quality indicator. Comparisons with existing methods show that the proposed algorithm is more robust when the displacement distribution is challenging.

Failure modes of doubly supported capacitive RF MEMS switches

For the design of radio frequency micro-electro-mechanical systems (RF MEMS) switches, the reliability issue becomes increasingly important. This paper represents some failure phenomena of doubly supported capacitive RF MEMS switches that include observable destruction failure and directly measurable parameter degradation obtained from the actuating-voltage testing and scanning electron microscope (SEM) observation. The relevant failure modes as well as their failure mechanisms are identified.

Electromechanical Model of RF MEMS Switches

With the recent rapid growth of Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches, there has developed an emergent requirement for more accurate theoretical models to predict their electromechanical behaviors. Many parameters exist in the analysis of the behavior of the switch, and it is inconvenient for further study. In this paper, an improved model is introduced, considering simultaneously axial stress, residual stress, and fringing-field effect of the fixed-fixed bridge structure. To avoid any unnecessary repetitive model tests and numerical simulation for RF MEMS switches, some dimensionless numbers are derived by making governing equation dimensionless. The electromechanical behavior of the fixed-fixed bridge structure of RF MEMS switches is totally determined by these dimensionless numbers.

Stiction and Anti-Stiction in Mems and Nems

Stiction in microelectromechanical systems (MEMS) has been a major failure mode ever since the advent of surface micromachining in the 80s of the last century due to large surface-area-to-volume ratio. Even now when solutions to this problem are emerging, such as self-assembled monolayer (SAM) and other measures, stiction remains one of the most catastrophic failure modes in MEMS. A review is presented in this paper on stiction and anti-stiction in MEMS and nanoelectromechanical systems (NEMS). First, some new experimental observations of stiction in radio frequency (RF) MEMS switch and micromachined accelerometers are presented. Second, some criteria for stiction of microstructures in MEMS and NEMS due to surface forces (such as capillary, electrostatic, van der Waals, Casimir forces, etc.) are reviewed. The influence of surface roughness and environmental conditions (relative humidity and temperature) on stiction are also discussed. As hydrophobic films, the self-assembled monolayers (SAMs) turn out able to prevent release-related stiction effectively. The anti-stiction of SAMs in MEMS is reviewed in the last part.