Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

An Integratable Distributed Bragg Reflector Laser by Low-Energy Ion Implantation Induced Quantum Well Intermixing

An integratable distributed Bragg reflector laser is fabricated by low-energy ion implantation induced quantum well intermixing. A 4.6nm quasi-continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.

High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching

High power and high-slope efficiency 650nm band real-refractive-index ridge waveguide AlGaInP laser diodes with compressive strained MQW active layer are formed by pure Ar ion beam etching process.Symmetric laser mesas with high perpendicularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching method.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.The typical threshold current of these devices is 46mA at room temperature,and a stable fundamental-mode operation over 40mW is obtained.Very high slope efficiency of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.

Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer

A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported．The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler．62ns pulse duration of single pulse is obtained.

Detection of Copper Ion with Laser-Induced Fluorescence in A Capillary Electrophoresis Microchip

A capillary electrophoresis microchip coupled with a confocal laser-induced fluorescence (LIF) detector was successfully constructed for the analysis of trace amounts of heavy metals in environmental sources. A new fluorescence dye, RBPhOH, synthesized from rhodamine B, was utilized in a glass microchip to selectively determine copper with high sensitivity. A series of factors including running buffer concentration, detection voltage, and sample loading time were optimized for maximum LIF detector response and, hence, method sensitivity.

Isolated sub-30-as pulse generation of an He+ ion by an intense few-cycle chirped laser and its high-order harmonic pulses

We present an efficient method to generate a ultrashort attosecond (as) pulse when a model He+ ion is exposed to the combination of an intense few-cycle chirped laser pulse and its 27th harmonics. By solving the time-dependent Schroumldinger equation, we found that high-order harmonic generation (HHG) from He+ ion is enhanced by seven orders of magnitude due to the presence of the harmonic pulse. After optimizing the chirp of the fundamental pulse, we show that the cut-off energy of the generated harmonics is extended effectively to I-p+25.5U(p). As a result, an isolated 26-as pulse with a bandwidth of 170.5 eV can be obtained directly from the supercontinuum around the cut-off of HHG. To better understand the physical origin of HHG enhancement and attosecond pulse emission, we perform semiclassical simulations and analyze the time-frequency characteristics of attosecond pulse.

Theoretical analysis of xuv photoabsorption spectra of laser-produced iodine plasmas

The 4d photoabsorption spectra of I2+, I3+, and I4+ have been obtained in the 70-127 eV region with the dual laser-produced plasma technique at time delays ranging from 400 to 520 ns. With decreasing time delay, the dominant contribution to the spectra evolves from the I2+ to the I4+ ions, and each spectrum contains discrete 4d-nf transitions and a broad 4d-epsilon f shape resonance, which are identified with the aid of multiconfiguration Hartree-Fock calculations. The excited states decay by direct autoionization involving 5s or 5p electrons, and rates for the different processes and resulting linewidths were calculated. With increasing ionization, the 4d-epsilon f shape resonance become intense and broader in going from I2+ to I3+, and then vanishes at I5+. In addition, the discrete structure of the calculated spectrum of each ion gradually approaches the corresponding shape resonance position. Based on the assumption of a normalized Boltzmann distribution among the excited states and a steady-state collisional-radiative model, we reproduced spectra which are in good agreement with experiment.

Drift distance survey in direct plasma injection scheme for high current beam production

In a laser ion source, plasma drift distance is one of the most important design parameters. Ion current density and beam pulse width are defined by plasma drift distance between a laser target and beam extraction position. In direct plasma injection scheme, which uses a laser ion source and a radio frequency quadrupole linac, we can apply relatively higher electric field at beam extraction due to the unique shape of a positively biased electrode. However, when we aim at very high current acceleration such as several tens of milliamperes, we observed mismatched beam extraction conditions. We tested three different ion current at ion extraction region by changing plasma drift distance to study better extraction condition. In this experiment, C6+ beam was accelerated. We confirmed that matching condition can be improved by controlling plasma drift distance.

Immobilized metal-ion chelating capillary microreactor for peptide mapping analysis of proteins by matrix assisted laser desorption/ionization-time of flight-mass spectrometry

Peptide mass mapping analysis, utilizing a regenerable enzyme microreactor with metal-ion chelated adsorption of enzyme, combined with matrix assisted laser desorption/ionization-time of flight-mass spectrometry (MALDI-TOF-MS) was developed. Different procedures from the conventional approaches were adopted to immobilize the chelator onto the silica supports, that is, the metal chelating agent of iminodiacetic acid (IDA) was reacted with glycidoxypropyltrimethoxysilane (GLYMO) before its immobilization onto the inner wall of the fused-silica capillary pretreated with NH4HF2. The metal ion of copper and subsequently enzyme was specifically adsorbed onto the surface to form the immobilized enzyme capillary microreactor, which was combined with MALDI-TOF-MS to apply for the mass mapping analysis of nL amounts of protein samples. The results revealed that the peptide mapping could routinely be generated from 0.5 pmol protein sample in 15 min at 50degreesC, even 20 fmol cytochrome c could be well digested and detected.

Measurement of the single-color three-photon resonant ionization spectrum of atomic uranium under the "equivalent wavelength effect laser" interaction

Using Nd: YAG laser (532 nm) pumped mixed-dye laser. we obtained the output of this dye enhanced at the wavelength interval equivalent to that given by the copper vapor laser pumped dye laser. This measure favored is with the measurement of single-color three-photon resonant ionization spectrum of atomic uranium in the range of 562-586 nm,which is otherwise not efficiently covered by Nd: YAG laser pumped dye laser with any single dye. Thus 140 U I energy levels were obtained and the peaks of interest 575.814 nm and 575.836 rim were well resolved and their relative intensity determined.

Concentration effects of Er3+ ion in YAG : Er laser crystals

Laser crystals of (Y1-xErx)(3)Al5O12, (YAG:Er) have been grown by the Czochralski method and the spectral properties have been studied for different Er3+ concentrations. The effects of various Er3+ concentrations on the structural distortions, luminescence quenching Of F-4(9/2), H-2(11/2), S-4(3/2) and red shift in laser wavelength have been discussed for the YAG:Er laser crystals. By using absorption spectra and Judd-Ofelt theory the experimental oscillator strengths, Omega(lambda), parameters and the excited state integrated absorption cross sections of Er3+ ion are reported and some variation regularities of these parameters have been observed. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Positive- and negative-ion matrix-assisted laser desorption/ionization mass spectrometry of saccharides

Matrix-assisted laser desorption/ionization (MALDI) mass spectrometry (MS) of oligosaccharides and polysaccharides has been investigated in detail, It is demonstrated that cationized species of oligosaccharides, [M+Na](+) and [M+K](+), are dominant products under the MALDI condition, and negative ions of oligosaccharides are not formed to any significant extent in this process, The molecular masses of polysaccharides are similarly determined by positive- and negative-ion MALDI-MS with the help of column chromatography. The distinction between positive- and negative-ion MALDI mass spectra of oligo-and polysaccharides indicates that the MALDI processes for saccharides vary with molecular mass. The matrix plays a more important role in the ionization process for oligosaccharides, while in the desorption process for polysaccharides. (C) 1998 John Wiley & Sons, Ltd.