Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated. © 2013 IEEE.

Chirp limitation on Mach-Zehnder interferometer ultrafast switching employing semiconductor optical amplifiers

We show for the first time that for a given switching pulse width, the maximum switching speed obtainable from a Mach-Zehnder interferometer employing semiconductor optical amplifiers is strongly dependent on the SOA chirp characteristics. © 2005 Optical Society of America.

Chirp limitation on Mach-Zehnder interferometer ultrafast switching employing semiconductor optical amplifiers

We show for the first time that for a given switching pulse width, the maximum switching speed obtainable from a Mach-Zehnder interferometer employing semiconductor optical amplifiers is strongly dependent on the SOA chirp characteristics. © 2005 Optical Society of America.

Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni(10 at.% Pt) film with Si(1 0 0) substrate

The reaction between an 11 nm Ni(10 at.% Pt) film on a Si substrate has been examined by in situ X-ray diffraction (XRD), atom probe tomography (APT) and transmission electron microscopy (TEM). In situ XRD experiments show the unusual formation of a phase without an XRD peak through consumption of the metal. According to APT, this phase has an Si concentration gradient in accordance with the θ-Ni2Si metastable phase. TEM analysis confirms the direct formation of θ-Ni2Si in epitaxy on Si(1 0 0) with two variants of the epitaxial relationship. © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

GexSi1-x/Si应变层超晶格及其相关材料的分子束外延生长和特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs的电学补偿机理及微区均匀性对电子迁移率的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs中El2的光淬灭效应及有关深能级行为的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

a-Si:H光致变化效应的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs注入退火特性的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

a-Si:H的P+/i/n+结构器件

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

a-Si:H/a-C:H超晶格的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si基量子阱材料1.3微米波长光电探测器的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GexSi1-x/Si异质结构中的缺陷研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

3C-SiC/Si材料的生长及其质量表征方法的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z