Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films

HfO2 is one of the most important high refractive index materials for depositing high power optical mirrors. In this research, HfO2 thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (LIDT) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. The results indicate that the LIDT of the as-grown sample is only 3.96 J/cm(2), but it is increased to 8.98 J/cm(2) after annealing under temperature of 200 degrees C in atmosphere. By measuring the laser weak absorption and SIMS of the samples, we deduced that substoichiometer is the main reason for the low LIDT of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization. (C) 2008 Elsevier B.V. All rights reserved.

Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

Very high modulation efficiency two-sections tapered laser diode at 1060nm for free space optical communications

High-power (more than 500 mW) and high-speed (more than 1 Gbps) tapered lasers at 1060 nm are required in free-space optical communications and (at lower frequencies of around 100 MHz) display applications for frequency doubling to the green. On a 3 mm long tapered laser, we have obtained an open eye diagram at 1 Gbps, together with a high extinction ratio of 11 dB, an optical modulation amplitude of 530 mW, and a high modulation efficiency of 13 W/A. On a 4 mm-long tapered laser, we have obtained an open eye diagram at 700 Mbps, together with a high extinction ratio of 19 dB, a high optical modulation amplitude of 1.6 W, and a very high modulation efficiency of 19 W/A. On a 6 mm-long tapered laser, we have obtained a very high power of 5W CW and a very high static modulation efficiency of 59.8 W/A. © 2011 SPIE.

Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.

Passively mode-locked YVO4/Nd : YVO4 composite crystal laser with a semiconductor saturable absorber as a high reflector

A passively mode-locked diode end-pumped YVO4/Nd:YVO4 composite crystal laser with a five-mirror folded cavity was first demonstrated in this paper by using a low temperature semiconductor saturable absorber mirror grown by metal organic chemical vapor deposition. Both the Q-switching and continuous-wave mode locking operation were realized experimentally. A stable averaged output power of 10.15 W with pulse width of about 11.2-ps at a repetition rate of 113 MHz was obtained, and the optical-to-optical efficiency of 43% was achieved.

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers. Stripe width and cavity length of the laser were 1.8 and 300 pm, respectively. After being cavity coated. and transistor outline (TO) packaged, the lasers showed high performance in practice. The threshold current was about 13 +/- 4 mA, the operation current and the lasing spectrum were about 58 6 mA and 1689 +/- 6 nm at 6-mW output power, respectively. Moreover, the maximum output power of the lasers was above 20 mW.

End-pumped continuous-wave passively modelocked Nd : YVO4 laser with low pump power

A simple cw mode-locked solid-state laser, which is end-pumped by a low-power laser diode, was demonstrated by optimizing the laser-mode size inside the gain medium. The optimum ratio between mode and pump spot sizes inside the laser crystal was estimated for a cw mode-locked laser, taking into account the input pump power. Calculation and experiment have shown that the optimum ratio was about 3 when the pump power is 2 W, which is different from the value regularly used in passively mode-locked solid-state lasers. This conclusion is also helpful in increasing the efficiency of high-power ultrashort lasers. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

Fiber Optic Coupling of CW Linear Laser Diode Array

Based on a set of microoptics the output radiation from a continuous wave (CW) linear laser diode array is coupled into a multi-mode optical fiber of 400 ptm diameter. The CW linear laser diode array is a 1 cm laser diode bar with 19 stripes with 100 fxm aperture spaced on 500 (xm centers. The coupling system contains packaged laser diode bar, fast axis collimator, slow axis collimation array, beam transformation system and focusing system. The high brightness, high power density and single fiber output of a laser diode bar is achieved. The coupling efficiency is 65% and the power density is up to 1.03 * 10~4 W/cm~2.

Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs

In this paper, we report on the design, growth and fabrication of 980nm strained InGaAs quantum well lasers employing novel material system of Al-free active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in laser structure design, improvement of surface morphology and laser performance. We demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. The laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). The broad-area and ridge-waveguide laser devices are both fabricated. For 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170mA, a high slope efficiency of 1.0W/A and high output power of more than 3.5W are achieved. The temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (T-o) of 200-250K and a wavelength shift coefficient of 0.34nm/degrees C. For 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mW with GOD-free thermal roll-over characteristics is obtained.

High-fidelity, broadband stimulated-Brillouin-scattering-based slow light using fast noise modulation.

We demonstrate a 5-GHz-broadband tunable slow-light device based on stimulated Brillouin scattering in a standard highly-nonlinear optical fiber pumped by a noise-current-modulated laser beam. The noisemodulation waveform uses an optimized pseudo-random distribution of the laser drive voltage to obtain an optimal flat-topped gain profile, which minimizes the pulse distortion and maximizes pulse delay for a given pump power. In comparison with a previous slow-modulation method, eye-diagram and signal-to-noise ratio (SNR) analysis show that this broadband slow-light technique significantly increases the fidelity of a delayed data sequence, while maintaining the delay performance. A fractional delay of 0.81 with a SNR of 5.2 is achieved at the pump power of 350 mW using a 2-km-long highly nonlinear fiber with the fast noise-modulation method, demonstrating a 50% increase in eye-opening and a 36% increase in SNR in the comparison.

High pressures generated by laser driven shocks: applications to planetary physics

High power lasers are a tool that can be used to determine important parameters in the context of Warm Dense Matter, i.e. at the convergence of low-temperature plasma physics and finite-temperature condensed matter physics. Recent results concerning planet inner core materials such as water and iron are presented. We determined the equation of state, temperature and index of refraction of water for pressures up to 7 Mbar. The release state of iron in a LiF window allowed us to investigate the melting temperature near the inner core boundary conditions. Finally, the first application of proton radiography to the study of shocked material is also discussed.

Relativistic laser pulse compression in plasmas with a linear axial density gradient

The self-compression of a relativistic Gaussian laser pulse propagating in a non-uniform plasma is investigated. A linear density inhomogeneity (density ramp) is assumed in the axial direction. The nonlinear Schrodinger equation is first solved within a one-dimensional geometry by using the paraxial formalism to demonstrate the occurrence of longitudinal pulse compression and the associated increase in intensity. Both longitudinal and transverse self-compression in plasma is examined for a finite extent Gaussian laser pulse. A pair of appropriate trial functions, for the beam width parameter (in space) and the pulse width parameter (in time) are defined and the corresponding equations of space and time evolution are derived. A numerical investigation shows that inhomogeneity in the plasma can further boost the compression mechanism and localize the pulse intensity, in comparison with a homogeneous plasma. A 100 fs pulse is compressed in an inhomogeneous plasma medium by more than ten times. Our findings indicate the possibility for the generation of particularly intense and short pulses, with relevance to the future development of tabletop high-power ultrashort laser pulse based particle acceleration devices and associated high harmonic generation. An extension of the model is proposed to investigate relativistic laser pulse compression in magnetized plasmas.

Polar distribution of ablated atomic material during the pulsed laser deposition of Cu in vacuum: Dependence on focused laser spot size and power density

Experiments have been carried out to investigate the polar distribution of atomic material ablated during the pulsed laser deposition of Cu in vacuum. Data were obtained as functions of focused laser spot size and power density. Thin films were deposited onto flat glass substrates and thickness profiles were transformed into polar atomic flux distributions of the form f(theta)=cos(n) theta. At constant focused laser power density on target, I=4.7+/-0.3X10(8) W/cm(2), polar distributions were found to broaden with a reduction in the focused laser spot size. The polar distribution exponent n varied from 15+/-2 to 7+/-1 for focused laser spot diameter variation from 2.5 to 1.4 mm, respectively, with the laser beam exhibiting a circular aspect on target. With the focused laser spot size held constant at phi=1.8 mm, polar distributions were observed to broaden with a reduction in the focused laser power density on target, with the associated polar distribution exponent n varying from 13+/-1.5 to 8+/-1 for focused laser power density variation from 8.3+/-0.3X10(8) to 2.2+/-0.1X10(8) W/cm(2) respectively. Data were compared with an analytical model available within the literature, which correctly predicts broadening of the polar distribution with a reduction in focused laser spot size and with a reduction in focused laser power density, although the experimentally observed magnitude was greater than that predicted in both cases. (C) 1996 American Institute of Physics.

Diagnostic of laser contrast using target reflectivity

Using three different laser systems, we demonstrate a convenient and simple plasma based diagnostic of the contrast of high-power short-pulse lasers. The technique is based on measuring the specular reflectivity from a solid target. The reflectivity remains high even at relativistic intensities above 10(19) W/cm(2) in the case of a high-contrast prepulse-free laser. On the contrary, the specular reflectivity drops with increasing intensities in the case of systems with insufficient contrast due to beam breakup and increased absorption caused by preplasma.