El test Bender como detector de problemas emocionales y comportamentales en niños de cuarto y quinto de primaria

Determinar si el test de Bender puede discriminar, en niños de cuarto y quinto de primaria, problemas emocionales y comportamentales y poder establecer un diagnóstico diferencial. Los objetivos específicos se agrupan en tres bloques: 1.- El Test de Bender y variables sociodemográficos. 2.- El test de Bender como prueba madurativa. 3.- El test de Bender como técnica proyectiva. Con el fin de dar respuestas a los objetivos planteados se formula una serie de hipótesis que orientan el análisis de los resultados. Esta investigación consiste en un estudio descriptivo correlacional. Se realiza mediante la aplicación del test Gestáltico Visomotor de Bender. Se trata de una investigación básicamente descriptiva y correlacional, donde se han seleccionado sujetos de diferentes edades (9-11 años) evaluados en un solo momento temporal. Las variables que se han utilizado, se han clasificado en variables sociodemográificas y psicológicas. La población la componen los alumnos de cuarto y quinto de primaria de la población de Huelva, capital y provincia. La elección de los distintos colegios se ha realizado teniendo en cuenta el nivel socioeconómico y profesional de los padres. La muestra está constituida por 722 sujetos de los cuales el 49,8 por ciento corresponde a varones y el 50,1 por ciento a mujeres, escolarizado en colegios públicos y concertados pertenecientes a Huelva capital y periferia. La selección de los instrumentos de medida se establece el criterio de que sean técnicas fiables, asequibles y fáciles de aplicar : Prueba de maduración visomotora: Test Bender. Prueba de capacidad intelectual: Test de Factor 'G' de R. B. Cattell y A. K. S. Cattell (Escala 2, Forma A). Cuestionario de Personalidad para niños EPQ-J De H. J. Eysenck y S. B. G. Eysenck. Cuestionario de autoevaluación Ansiedad estado-rasgo en niños, de C. D. Spielberg et al. Cuestionario para el profesor tutor. El test de Bender se podría emplear como screening para detectar desajustes madurativos que pueden tener como consecuencias problemas emocionales y posibles conductas antisociales, pero no es válido para detectar patologías diferenciales como la ansiedad, neuroticismo y psicoticismo. Se puede considerar esta prueba como un complemento de las técnicas psicométricas y así proporcionar, no sólo una visión analítica, sino una perspectiva más global de la persona. Sin embargo, en la utilización del test de Bender como test de personalidad se deben tener en cuenta los siguientes planteamientos: a. Aplicarlo de forma individual. b. Conveniencia de tener una pequeña entrevista con el niño. c. Es aconsejable que el evaluador tenga experiencia en el manejo de pruebas proyectivas y amplios conocimientos de psicopatología infantil. d. Así mismo, es muy importante que el evaluador tenga cierto entrenamiento y experiencia con el test de Bender. Es importante seguir investigando los índices que se asocian a conductas disruptivas y asociales, pues parece que es donde se han obtenido más relaciones y quizás en un futuro pueda ser utilizada de manera preventiva.

Laser stripe peak detector for 3D scanners: a FIR filter approach

The accuracy of a 3D reconstruction using laser scanners is significantly determined by the detection of the laser stripe. Since the energy pattern of such a stripe corresponds to a Gaussian profile, it makes sense to detect the point of maximum light intensity (or peak) by computing the zero-crossing point of the first derivative of such Gaussian profile. However, because noise is present in every physical process, such as electronic image formation, it is not sensitive to perform the derivative of the image of the stripe in almost any situation, unless a previous filtering stage is done. Considering that stripe scanning is an inherently row-parallel process, every row of a given image must be processed independently in order to compute its corresponding peak position in the row. This paper reports on the use of digital filtering techniques in order to cope with the scanning of different surfaces with different optical properties and different noise levels, leading to the proposal of a more accurate numerical peak detector, even at very low signal-to-noise ratios

Silicon Chips and Nano Devices

A look at the Southampton Nanfabrication Centre where electro-photonic research is carried out and the AMD company's industrial processes for creating commercial quantities of silicon computing devices.

Conscientious objection and ideological impositions: The Drift of The Mayflower

This article discusses the problematic and evading development of conscientiousobjection in the context of the Colombian constitutional jurisprudence. From a historical allusion to the famous case of the “Mayflower Pilgrims” –which serve as areference to the central problems that faces the objector–, it seeks to define the scopeof conscientious objection as a fundamental right (as a fundamental justice claim)in regard to the “factual” and “legal” possibilities for its exercise, for which there willbe a brief contrast between the most representative cases decided by the ColombianConstitutional Court in such matter. The core of the article is the idea that thereis an ideological prevalence that, unjustifiably, makes it difficult and in some casesdenies the exercise of the right to object in consciousness, particularly when it comes tothe right of life in regard to the abortion case.

El detector de colors. 'El detector de colores'.

Resumen del vídeo en catalán

Tecnología. Construcción de un detector de humedad.

En la cub.: Secundaria. Acompañado de : Tecnología. Estructura

Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition

Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation

Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature

Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions

Oxidation of silicon: further tests for the interfacial silicon emission model

The classical description of Si oxidation given by Deal and Grove has well-known limitations for thin oxides (below 200 Ã). Among the large number of alternative models published so far, the interfacial emission model has shown the greatest ability to fit the experimental oxidation curves. It relies on the assumption that during oxidation Si interstitials are emitted to the oxide to release strain and that the accumulation of these interstitials near the interface reduces the reaction rate there. The resulting set of differential equations makes it possible to model diverse oxidation experiments. In this paper, we have compared its predictions with two sets of experiments: (1) the pressure dependence for subatmospheric oxygen pressure and (2) the enhancement of the oxidation rate after annealing in inert atmosphere. The result is not satisfactory and raises serious doubts about the model’s correctness

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon

A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si

Integració 3D de detectors de píxels híbrids

La miniaturització de la industria microelectrònica és un fet del tot inqüestionables i la tecnologia CMOS no n'és una excepció. En conseqüència la comunitat científica s'ha plantejat dos grans reptes: En primer lloc portar la tecnologia CMOS el més lluny possible ('Beyond CMOS') tot desenvolupant sistemes d'altes prestacions com microprocessadors, micro - nanosistemes o bé sistemes de píxels. I en segon lloc encetar una nova generació electrònica basada en tecnologies totalment diferents dins l'àmbit de les Nanotecnologies. Tots aquests avanços exigeixen una recerca i innovació constant en la resta d'àrees complementaries com són les d'encapsulat. L'encapsulat ha de satisfer bàsicament tres funcions: Interfície elèctrica del sistema amb l'exterior, Proporcionar un suport mecànic al sistema i Proporcionar un camí de dissipació de calor. Per tant, si tenim en compte que la majoria d'aquests dispositius d'altes prestacions demanden un alt nombre d'entrades i sortides, els mòduls multixip (MCMs) i la tecnologia flip chip es presenten com una solució molt interessant per aquests tipus de dispositiu. L'objectiu d'aquesta tesi és la de desenvolupar una tecnologia de mòduls multixip basada en interconnexions flip chip per a la integració de detectors de píxels híbrids, que inclou: 1) El desenvolupament d'una tecnologia de bumping basada en bumps de soldadura Sn/Ag eutèctics dipositats per electrodeposició amb un pitch de 50µm, i 2) El desenvolupament d'una tecnologia de vies d'or en silici que permet interconnectar i apilar xips verticalment (3D packaging) amb un pitch de 100µm. Finalment aquesta alta capacitat d'interconnexió dels encapsulats flip chip ha permès que sistemes de píxels tradicionalment monolítics puguin evolucionar cap a sistemes híbrids més compactes i complexes, i que en aquesta tesi s'ha vist reflectit transferint la tecnologia desenvolupada al camp de la física d'altes energies, en concret implantant el sistema de bump bonding d'un mamògraf digital. Addicionalment s'ha implantat també un dispositiu detector híbrid modular per a la reconstrucció d'imatges 3D en temps real, que ha donat lloc a una patent.

The release of silicon from amorphous silica and rice straw in Sri Lankan soils

Silicon release from rice straw and amorphous silica when shaken in solution with five Sri Lankan soils was studied indirectly using sorption isotherms and changes in concentration and directly using straw in dialysis bags examined using electron microscopy. The aim was to further our understanding of the processes and factors affecting the release of straw-Si in soils and its availability to rice. The soils (alfisols and ultisols) shaken with 0.1 M NaCl (5 g per 125 mL for 250 days) produced concentrations of 1 - 4 mg L-1 of monosilicic acid-Si. Amorphous silica added to these suspensions (36.5 mg, containing 17 mg Si) raised the concentrations to 20 - 40 mg L-1, and added rice straw (0.5 g, containing 17 mg Si) gave 10 - 25 mg L-1. Sorption isotherms (7 days equilibrations) were used to calculate from the concentrations the amounts of Si released ( 24 - 38% and 8 - 21%, respectively). Both materials gave about 40 mg L-1 of monosilicic acid-Si plus 30 mg L-1 of disilicic acid-Si when shaken in solution alone (5 g per 125 mL). Straw in dialysis bags ( 0.5 g per 25 mL in 0.1 M NaCl) was shaken in soil suspension ( 5 g per 100 mL) for 60 days. Similar concentrations and releases were measured to those obtained above. About one fifth of the mass of straw was lost by decomposition in the first 15 days. A chloroform treatment prevented decomposition, but Si release was unaffected. Disintegration continued throughout the experiments, with phytoliths being exposed and dissolved. Compared to the rate of release from straw into solution without soil, the release of Si into soil suspensions was increased during the first 20 days by adsorption on the soil, but was then reduced probably through the effect of Fe and Al on the phytolith surfaces. The extent of this blocking effect varied between soils and was not simply related to soil pH.