Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
| Data(s) |
2010
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|---|---|
| Resumo |
The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon |
| Formato |
application/pdf |
| Identificador |
Kail, F., Farjas, J., Roura, P., Secouard, C., Nos, O., Bertomeu, J., Alzina, F., i Roca I Cabarrocas, P. (2010). Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments. Applied Physics Letters, 97 (3), 031918. Recuperat 23 març 2011, a http://link.aip.org/link/doi/10.1063/1.3464961 0021-9606 (versió paper) 1089-7690 (versió electrònica) |
| Idioma(s) |
eng |
| Publicador |
American Institute of Physics |
| Relação |
Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.3464961 © Applied Physics Letters, 2010, vol. 97, núm. 3, p. 244308 Articles publicats (D-F) |
| Direitos |
Tots els drets reservats |
| Palavras-Chave | #Amorphous semiconductors #Espectroscòpia Raman #Hidrogenació #Semiconductors amorfs #Silici #Hydrogenation #Raman spectroscopy |
| Tipo |
info:eu-repo/semantics/article |
