Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction

Cubic GaN was grown on GaAs(100) by low pressure metal organic chemical vapor deposition (MOCVD). X-ray diffraction, scanning electron microscope (SEM) and photoluminescence (PL) spectra were performed to characterize the quality of the GaN film. The PL spectra of cubic GaN thin films being thicker than 1.5 mu m were reported. Triple-crystal diffraction to analyze orientation distributions and strain of the thin films was also demonstrated.

Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)

Cubic AlGaN films were grown on GaAs(100) substrates by MOVPE. Scanning electron microscope and photoluminescence were used to analyze the surface morphology and the crystalline quality of the epitaxial layers. We found that both NH, and TEGa fluxes have a strong effect on the surface morphology of AlGaN films. A model for the lateral growth mechanism is presented to qualitatively explain this effect. The content of hexagonal AlGaN in the cubic AlGaN films was also related to the NH3 flux. (C) 1999 Elsevier Science B.V. All rights reserved.

Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)

The thermal stability of cubic-phase GaN (c-GaN) films are investigated by photoluminescence (PL) and Raman scattering spectroscopy. C-GaN films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition. PL measurements show that the near-band-edge emissions in the as-grown GaN layers and thermally treated samples are mainly from c-GaN. No degradation of the optical qualities is observed after thermal annealing. Raman scattering spectroscopy shows that the intensity of the E-2 peak from hexagonal GaN grains increases with annealing temperature for the samples with poor crystal quality, while thermal annealing up to 1000 degrees C has no obvious effect on the samples with high crystal quality. (C) 1999 American Institute of Physics. [S0003-6951(99)04719-1].

Cubic-phase GaN light-emitting diodes

The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode. (C) 1999 American Institute of Physics. [S0003-6951(99)01416-3].

Cubic InGaN grown by MOCVD

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by Xray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition

Low-temperature growth of cubic GaN at 520 degrees C was achieved using CCl4 as an additive by metalorganic chemical-vapor deposition (MOCVD) on GaAs substrate. X-Ray measurement confirmed that the films are single-phase cubic GaN. Scanning electron microscopy (SEM) and reflection high-energy electron diffraction (RHEED) were also used to analyze the surface morphology and the quality of films. The evolution of surface morphology suggests that CCl4 can reduce the hopping barrier and thus Ga adatoms are able to diffuse easily on the GaN surface. (C) 1998 Elsevier Science S.A. All rights reserved.

Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE

Cubic GaN films were grown on GaAs(1 0 0) substrates by low-pressure metalorganic vapor-phase epitaxy at high temperature. We have found a nonlinear relation between GaN film thickness and growth timer and this nonlinearity becomes more obvious with increasing growth temperature. We assumed it was because of Ga diffusion through the GaN film, and developed a model which agrees well with the experimental results. These results raise questions concerning the role of Ga diffusion through the GaN film, which may affect the electrical and optical properties of the material. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Electronic, structural, and optical properties of crystalline yttria

The electronic structure of crystalline Y2O3 is investigated by first-principles calculations within the local-density approximation (LDA) of the density-functional theory. Results are presented for the band structure, the total density of states (DOS), the atom-and orbital-resolved partial DOS. effective charges, bond order, and charge-density distributions. Partial covalent character in the Y-O bonding is shown, and the nonequivalency of the two Y sites is demonstrated. The calculated electronic structure is compared with a variety of available experimental data. The total energy of the crystal is calculated as a function of crystal volume. A bulk modulus B of 183 Gpa and a pressure coefficient B' of 4.01 are obtained, which are in good agreement with compression data. An LDA band gap of 4.54 eV at Gamma is obtained which increases with pressure at a rate of dE(g)/dP = 0.012 eV/Gpa at the equilibrium volume. Also investigated are the optical properties of Y2O3 up to a photon energy of 20 eV. The calculated complex dielectric function and electron-energy-loss function are in good agreement with experimental data. A static dielectric constant of epsilon(O)= 3.20 is obtained. It is also found that the bottom of the conduction band consists of a single band, and direct optical transition at Gamma between the top of the valence band and the bottom of the conduction band may be symmetry forbidden.

Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors

Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 mu m at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current-voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.

半干旱典型草原区封育草地土壤结构特征研究

以宁夏固原云雾山自然保护区典型草原为研究对象,采用空间序列代替时间序列的方法,以坡耕地为对照,对封育演替草地百里香(Thymus mongolicus Ronn.)、铁杆蒿(Artemisia sacrorum Ledeb.)、大针茅(Stipa grandis P.Smirn.)和本氏针茅(Stipa bungeana Trin.)群落0~10 cm表层土壤水稳性团聚体分布、孔隙度及土壤结构评价指标进行了研究和分析。结果表明:草地实施封育措施能明显改善土壤结构特征,随着草地植被自然演替,土壤的结构稳定性和孔隙状况逐步得到提高;在演替过程中,封育草地土壤的>0.25 mm水稳性团聚体含量(WSAC)、平均重量直径(MWD)、几何平均直径(GMD)和孔隙分形维数(Dp)逐渐增加,团聚体分形维数(Da)逐渐减少,说明植被演替能促进形成良好的土壤结构;同时,土壤结构影响因素随着草地植被演替过程表现出有机碳含量显著增加,容重显著降低,毛管孔隙度逐渐增大,非毛管孔隙度逐渐降低。本研究还比较了多项土壤结构评价指标,表明与MWD和GMD相比,指标WSAC(>0.25 mm)、Da及Dp能更好地反映出各封育草地群落之间土壤结...

近地表土壤水分条件对坡面农业非点源污染物运移的影响

采用人工模拟降雨实验,研究了近地表土壤水分条件,尤其是土壤水分饱和条件对土壤侵蚀过程中农业非点源污染物运移的影响.结果表明,前期近地表土壤水分条件对土壤侵蚀过程中农业非点源污染物的迁移有着很大影响.饱和含水量时径流及泥沙中非点源污染物的流失浓度和流失量大于非饱和含水量,且前期近地表土壤含水量越大,径流及泥沙中农业非点源污染物的流失浓度和流失量越大.土壤氮素的主要流失途径是降雨所产生的径流,约占总流失量的90.4%～99.8%;土壤磷素的流失途径是降雨径流和侵蚀产沙,分别占总流失量的2.67%～23.5%和76.5%～97.3%.同时,土壤质地对磷素养分的流失有很大影响,杨凌土随泥沙流失的DP浓度和流失量均大于安塞黄绵土.最后,提出了采取最佳管理措施等控制农业非点源污染的针对性建议.

钙钛矿过渡金属氧化物电、磁性质的理论研究

钙钛矿过渡金属氧化物已有大量实验和理论研究。本论文采用一般梯度近似（GGA）和GGA+U（U表示原位的库仑相互作用）下的第一性原理密度函数方法研究了双层，四层和含氧空位的钙钛矿过渡金属氧化物的晶体结构、电子结构以及电、磁性质。 从对双层钙钛矿Sr2FeMoO6和Sr2CoMoO6的研究，我们发现Sr2FeMoO6的四方相比立方相稳定，而且两种结构下它都显半金属特性；对于Sr2CoMoO6，原位的库仑相互作用决定了它的半导体性质。此外，我们还研究了实验上备受争议的Ba2YIrO6和Ba2LaIrO6在立方 Fm-3m, 菱形 R-3和单斜 P21/n三种结构下的相对稳定性。结果表明第一性原理与半经验的键价模型得到的结论相同，即Ba2YIrO6和Ba2LaIrO6的最稳定结构分别是单斜 P21/n和菱形R-3。 不同Mn-O-Mn角度下YBaMn2O5的电子结构和磁结构的计算结果表明，当Mn-O-Mn 角度处于实验所测的157.8o时，G-型反铁磁结构比A-型稳定，与实验结果相符。随着角度的增加，大约在170出现了磁结构转变。当角度大于170时，A型反铁磁结构比G型稳定，即YBaMn2O5从G型过渡到A型。此外，我们还研究了YBaMn2O5在不同磁结构以及不同角度下的导电性。 通过对四层钙钛矿化合物CaCu3M4O12 （M是3d过渡金属离子：Ti, V, Cr, Mn, Fe, Co）的能带结构计算研究了M离子的电子构型对其磁结构和导电性的影响。结果表明随着M电子数的增加，该系列化合物磁结构为：在CaCu3Ti4O12（Ti4+：d0）中Cu-Cu为反铁磁性耦合，即该物质为反铁磁体；在CaCu3M4O12 (M= V4+：d1, Cr4+：d2, Mn4+：d3, Fe4+：d4；dn，0