1000 resultados para Avidina, Biotina, bioconiugazione, complessi luminescenti, Iridio(III)


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HEHEHPHDEHPE_rIIIHEHEHPE_rIII1HEHEHPHClE_r(III2HEHEHPH_2SO_4E_r(III3HDEHPHClEr(III

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Cu(III)1.Na_4H[Cu(H_2TeO_6)_2]17H_2ONa_4K[Cu(HIO_6)_2]12H_2OCu(III)2.Cu(II)Cu(III)Cu2pCu(III)d-dCu(II)d-d3.O_3Cu(II)Cu(III)Ba_4K[Cu(H_2TeO_6)_2] (OH)_46H_2OBa_3K[Cu(HIO_6)_2] (KOH)_(0.5)(OH)_28H_2OCu2p XPS4.BaCuO_(2.5)Cu(III) ESRCu2p XPS5.Na_4K[Cu(HIO_6)_2]12H_2OBaCuO_(2.5)Cu2p XPSYBa_2Cu_3O_(7-5)6.CuIIICuYBCO1.BiF_3(Bi)/Ce_(0.95)Ca_(0.05)F_(2.95)/Pt130 EMFNernst100Pa1000Pa15516Pa1000PaEMF-116mV/decade, 2.La_(1-x)Pb_xF_(3-x)(X = 0.00 0.15)La_(0.95)Pb_(0.05)F_(2.95)LaF_3La_(0.95)Pb_(0.05)F_(2.95)PdPtBiF_3(Bi)PbF_2(Pb)BiF_3(Bi)/La_(0.95)Pb_(0.05)F_(2.95)/Pt150 EMF1gPo_2Nernst150 80100Pa1000Pa7515EMFE=E_o-96lgP_(H2)(mV)CO1000Pa3.Ln_(1-x)Pb_xF_(3-x)(Ln=CePrNdGdDyHoYb)PLnLnF_3La~(3+)Ce~(3+)Pr~(3+)Nd~(3+)Pb~(2+)LnF_3PbF_2Gd~(3+)Dy~(3+)Ho~(3+)Yb~(3+)Pb~(2+)LnF_3PbF_2

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Intervalley GAMMA - X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. As a prototype crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for GaP, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for GaP, InP and InAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting GAMMA - X intervalley shatterings for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.

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Intervalley GAMMA-X deformation-potential constants (IVDP's) have been calculated by use of a first-principles pseudopotential method for the III-V zinc-blende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb. When the calculated IVDP's of LA phonons for GaP, InP, and InAs and of LO phonons for AlAs, AlSb, GaAs, GaSb, and InSb are compared with results of a previous calculation that used the empirical pseudopotential method (EPM) and a rigid-ion approximation, good agreement is found. However, our ab initio pseudopotential results on IVDP's of LA phonons for AlAs, AlSb, GaAs, GaSb, and InSb and of LO phonons for GaP, InP, and InAs are about one order of magnitude smaller than those obtained by use of EPM calculations, indicating that the electron redistribution accompanying crystal-lattice deformation has a significant effect on GAMMA-X intervalley scattering for these phonon modes when the anions are being displaced. In our calculations the LA- and LO-phonon modes at the X point have been evaluated in the frozen-phonon approximation. We have also obtained the LAX- and LOX-phonon frequencies for these materials from total-energy calculations, which agree very well with experimental values for these semiconductors. We have also calculated GAMMA-X hole-phonon scattering matrix elements for the top valence bands in these nine semiconductors, from which the GAMMA-X IVDP's of the top valence bands for the longitudinal phonons and transverse phonons are evaluated, respectively.

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Longitudinal zone boundary X phonon frequencies have been calculated by a first principles pseudopotential method for III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. The phonon frequencies have been evaluated from total energy calculations in the frozen phonon approximation. The calculated phonon frequencies agree very well with the experimental values.

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2010-11-23

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High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.

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The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.