Magnetocaloric effect in La0.75Sr0.25MnO3 manganite

The polycrystalline manganite La0.75Sr0.25MnO 3 prepared by an alternative carbonate precipitation route reveals the rhombohedral perovskite structure. Magnetization isotherms measured up to 2 T are used to determine Curie temperature of 332 K by means of Arrott plot. Maximum of magnetic entropy change is found at Curie temperature. The relative cooling power equal to 64 J/kg for 1.5 T magnetic field, is superior as compared to the manganite with the same chemical composition from the solgel method. © 2010 Elsevier B.V. All rights reserved.

保安湖扁担塘螺类生产力的研究 Ⅲ.长角涵螺的周年生产量

采用三种方法对扁担塘长角涵螺的周年生产量进行了测算 ,结果表明 ,三种方法得到的生产量及P/B系数吻合较好。生产量的带壳湿重和去壳干重分别是 :体长频率法 ,2 .0 88g·m 2 ·a 1 ,0 .1 0 3g·m 2 ·a 1 ;Allen曲线法 ,2 .1 2 2g·m 2 ·a 1 ,0 .1 0 6g·m 2 ·a 1 ;瞬时生长率法 ,2 .2 73g·m 2 ·a 1 ,0 .1 1 4g·m 2 ·a 1 。对应的P/B系数为 4.3 ,4.3 ,4.0。

长江干流季节性水淹滩地杨树生长规律研究

研究了长江中下游干流滩地抑螺防病林的主要树种杨树的生长规律，建立了杨树的生 长动态数学模型．经过进一步的生长动态模型分析，研究结果表明：滩地高程是影响杨树胸径、 树高和材积生长量的关键因子．滩地淹水时间超过６０天的地方，杨树生长受到明显的影响．

Raman scattering efficiency of graphene

We determine the Raman scattering efficiency of the G and 2D peaks in graphene. Three substrates are used: silicon covered with 300 or 90 nm oxide, and calcium fluoride (CaF2). On Si/SiOx, the areas of the G and 2D peak show a strong dependence on the substrate due to interference effects, while on CaF2 no significant dependence is detected. Unintentional doping is reduced by placing graphene on CaF2. We determine the Raman scattering efficiency by comparison with the 322 cm -1 peak area of CaF2. At 2.41 eV, the Raman efficiency of the G peak is ∼200×10-5 m-1Sr-1, and changes with the excitation energy to the power of 4. The 2D Raman efficiency is at least one order of magnitude higher than that of the G peak, with a different excitation energy dependence. © 2013 American Physical Society.

数理统计法初步分析江汉平原裸藻门植物的分布

裸藻门植物在江汉平原分布的特点是:分布广泛,出现机率高,达96.4％;用方差分析法,检测各采集点浮游生物标本中裸藻门植物种类丰度在平原各地随机分布的差异程度,其结果是无显著的区域性差异;水体中裸藻门植物种类丰度的频数分布近似于一正态曲线,这反映了大多数水体中裸藻类的种类丰度较大;相同频数的种类数与其出现频数的相关性呈明显的幂函数关系,显示了只有少数非常普生的裸藻门种类在区内广泛分布。

Physiological and biochemical responses of Scytonema javanicum (cyanobacterium) to salt stress

Scytonema javanicum (Kutz.) Born et Flah (cyanobacterium) is one of the species distributed widely in the crust of desert soils regularly subjected to severe water stress. To investigate the response of the species to salt stress, many physiological and biochemical parameters, including growth rate, ratio of variable fluorescence to maximum fluorescence (Fv/Fm), reactive oxidative species (ROS), malondialdehyde (MDA), catalase (CAT), and superoxide dismutase (SOD), were determined in culture. The results showed that 50 mM NaCl inhibited growth and Fv/Fm in the medium BG-110, and that the inhibition was maximum after 1-2 days' exposure to salt stress; 50 mM NaCl also increased the contents of ROS and MDA in treated cells, which suggests that salt stress may lead to oxidative damage and lipid peroxidation in the alga. Further, changes in the antioxidative enzymes SOD and CAT in the treated alga were consistent with changes in ROS and MDA at certain extent. These observations suggest that oxidative stress resulting from salt stress in S. javanicum could result in the production of antioxidative enzymes to counteract the oxidative damage, and the enzymes may contribute to the ability of S. javanicum to survive the adverse desert environment. (c) 2007 Elsevier Ltd. All rights reserved.

Cloning of rainbow trout (Oncorhynchus mykiss) histone H3 promoter and the activity analysis in rare minnow (Gobiocypris rarus)

Rainbow trout historic H3 (RH3) promoter was cloned via high fidelity PCR. The cloned RH3 promoter was inserted into a promoter-lacked vector pEGFP-1, resulting in an expression vector pRH3FGFP-1. The linearized pRH3EGFP-1 was microinjected into fertilized eggs of rare minnows and the sequential embryogenetic processes were monitored under a fluorescent microscope. Strong green fluorescence was ubiquitously observed at as early as the gastrula stage and then in various tissues at the fry stage. The results indicate that RH3 promoter, as a piscine promoter, could serve in producing transgenic Cyprinoid such as rare minnow. Promoter activity of RH3, CMV and common carp beta-actin (CA) were compared in rare minnow by the expression of respective recombinant EGFP vectors. The expression of pCMVEGFP occurred earlier than the following one, pRH3EGFP-1, and then pCAEGFP during the embryogenesis of the transgenics. Their expression activities demonstrated that the CMV promoter is the strongest one, followed by the CA and then the RH3.

Intraspecific phylogeography of Carchesium polypinum (Peritrichia, Ciliophora) from China, inferred from 18S-ITS1-5.8S ribosomal DNA

Based on the variation of site 34, 46, 241, 305 and 322 in the 18S-ITS1 rDNA sequence, 19 Carchesium polypinum populations collected from eight provinces of China were separated into northern and southern population along the delineation between the Yangtze River and the Pearl River. This geographic distribution pattern of Carchesium polypinum maybe results from two factors: the vicariance resulting from the formation of the delineation between the Pearl River and the Yangtze River accompanied with the uplift of Qinghai-Xizang Plateau, and the different dispersal paths of C. polypinum affected by the climate.

Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.

Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.

Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition

A novel 10-period SiC/AlN multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition (LPCVD). The structure with total film thickness of about 1.45 mu m is deposited on a Si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3 nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/AlN structure and periodic changes of depth profiles of C, Si, Al, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. To the best of our knowledge, this is the first report of growth of the SiC/AlN periodic structure using the home-made LPCVD system.

Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy

In situ doping for growth of n-p-n Si/SiGe/Si heterojuction bipolar transistor (HBT) structural materials in Si gas source molecular beam epitaxy is investigated. We studied high n-type doping kinetics in Si growth using disilane and phosphine, and p-type doping in SiGe growth using disilane, soild-Ge, and diborane with an emphasis on the effect of Ge on B incorporation. Based on these results, in situ growth of n-p-n Si/SiGe/Si HBT device structure is demonstrated with designed structural and carrier profiles, as verified from characterizations by X-ray diffraction, and spreading resistance profiling analysis. (C) 2000 Elsevier Science B.V. All rights reserved.

Electron irradiation and thermal annealing effect on GaAs solar cells

This paper describes the effect of electron irradiation and thermal annealing on LPE AlGaAs/GaAs heterojunction solar cells with various p/n junction depths. The electron irradiation experiments were performed with energy of 3 MeV, fluences ranging from 1 x 10(14) to 5 x 10(15) e/cm(2). The results obtained demonstrate that the irradiation-induced degradation of performances of the cells is mainly in the short circuit current and could be mostly recovered by annealing at 260 degrees C for 30 min. Four electron traps, E-c - 0.24 eV, E-c - 0.41 eV, E-c - 0.51 eV, E-c - 0.59 eV, were found by DLTS analysis, only two shallow levels of which could be removed by the annealing. (C) 1998 Elsevier Science B.V. All rights reserved.

6H-SiC高场输运特性的多粒子蒙特卡罗研究

采用非抛物性能带模型，对6H-SiC高场电子输运特性进行了多粒子蒙特卡罗(Ensemble Monte Carlo)研究．研究表明：温度为296 K时，电子横向漂移速度在电场为2．0×104 V／cm处偏离线性区，5．O×10~5V／cm处达到饱和．由EMC方法得到的电子横向饱和漂移速度为1．95×10~7cm／s，纵向为6．0×10~6cm／s，各向异性较为显著．当电场小于1．0×10~6 V／cm时，碰撞电离效应对高场电子漂移速度影响较小．另一方面，高场下电子平均能量的各向异性非常明显．电场大于2．O×10~5V／cm时，极化光学声子散射对电子横向能量驰豫时间影响较大．当电场一定时，c轴方向的电子碰撞电离率随着温度的上升而增大．对非稳态高场输运特性的分析表明：阶跃电场强度为1．0×10~6 V／cm时，电子横向瞬态速度峰值接近3．O×10~7cm／s，反应时间仅为百分之几皮秒量级．