In-plane critical current density measurements of straight and curved tracks in RABiTS-MOD coated conductors

Depending on the temperature and the magnitude and orientation of an external magnetic field, the critical current density, J c , of a coated conductor can be limited either by the properties of the grain boundaries or by those of the grains. In order to ascertain what governs J c under different conditions, we have measured straight and curved tracks, patterned into RABiTS-MOD samples, while a magnetic field was swept in the plane of the films. Significantly different results were obtained at different field and temperature ranges, which we were able to attribute to J c being limited by either grain boundaries or grains.

Nanoscale plasmonic memristor with optical readout functionality.

We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.

Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

Hydroacoustic study of spatial and temporal distribution of Gymnocypris przewalskii (Kessler, 1876) in Qinghai Lake, China

Gymnocypris przewalskii (Kessler 1876) is an endangered and state-protected rare fish species in Qinghai Lake, China. To further understand the life history and distribution of this fish, five surveys were carried out in Qinghai Lake between 2002-2006. Results of these surveys indicate that fishes were predominantly distributed about 2 m under the surface. In July, significant differences in fish density were found between surface and bottom layers (P = 0.001), and/or between middle and bottom layers (P = 0.025). Fish density was the greatest in the surface layer. In August and October, no significant differences were found between the different layers, but the bottom layer had a greater fish density. Furthermore, there were very large differences among different zones in fish distribution density. Differences in horizontal distribution were not significantly correlated to factors such as water depth and inshore distance, possibly because of very low and uniform fish density. Feeding, changes in water temperature, over-wintering and spawning appeared to influence fish distribution. Hydroacoustic estimates of G. przewalskii biomass in Qinghai Lake increased significantly between 2002 and 2006. We attribute this increase to the management measures put in place to protect this species.

Top down scale-up of semiconducting nanostructures for large area electronics

In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1× 1 cm2 area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme. © 2014 IEEE.

Semantic transform: Weakly supervised semantic inference for relating visual attributes

Relative (comparative) attributes are promising for thematic ranking of visual entities, which also aids in recognition tasks. However, attribute rank learning often requires a substantial amount of relational supervision, which is highly tedious, and apparently impractical for real-world applications. In this paper, we introduce the Semantic Transform, which under minimal supervision, adaptively finds a semantic feature space along with a class ordering that is related in the best possible way. Such a semantic space is found for every attribute category. To relate the classes under weak supervision, the class ordering needs to be refined according to a cost function in an iterative procedure. This problem is ideally NP-hard, and we thus propose a constrained search tree formulation for the same. Driven by the adaptive semantic feature space representation, our model achieves the best results to date for all of the tasks of relative, absolute and zero-shot classification on two popular datasets. © 2013 IEEE.

Cell responses of Dunaliella salina FACHB 435 (green alga) to microgravitational stimulation by clinorotation

Clinorotation experiments were established to simulate microgravity on ground. It was found that there were obvious changes of Dunaliella salina FACHB435 cells and their metabolic characteristics during clinorotation. The changes included the increases of glycerol content, the rate of H+ secretion and PM H+-ATPase activity, and the decrease of ratio of the plasma membrane (PM) phospholipid to PM protein. These results indicated that microgravity was a stress environment to Dunaliella salina. It is deduced that it would be possible to attribute the effect of microgravity on algal cells to the secondary activation of water stress.

Influence of Si doping on magnetic properties of (Ga,Mn)As

We have systematically investigated the magnetic properties of Si-doped (Ga,Mn)As films. When the Si content is low, both Curie temperature (T-C) and carrier density (p) decrease compared with undoped (Ga,Mn)As, whereas a monotonic increase of T-C and p is observed with further increase in the doping content of Si. We discuss the possible mechanism for the changes obtained by different Si doping contents and attribute the results to a competition between the existence of Si-Ga (Si substitutes for Ga site) that acts as a donor and Si-I (Si interstitials) which is in favor of the improvement of ferromagnetism. (C) 2008 Elsevier B.V. All rights reserved.

Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.

Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c Gamma 1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.

Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells

The effects of pre-TMIn flow prior to QW growth and TMIn flow rates during QW growth on the interface and optical properties of InGaN/GaN MQWs were investigated. Pre-depositing indium prior to QW growth and an appropriate TMIn flow rate can improve the interface abruptness and increase the EL intensity. InGaN/GaN MQWs with improved interface abruptness have increasing emission intensity and wavelength. We attribute the interface improvement and the increase of EL intensity to the improvement of the indium compositional profiles. (C) 2004 Elsevier B.V. All rights reserved.

Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well

Effects of SiO2 encapsulation and rapid thermal annealing on the optical properties of a GaNAs/GaAs single quantum well (SQW) are studied by low-temperature photoluminescence (LTPL). After annealing at 800degreesC for 30s, a blueshift of the LTPL peak energy for the SiO2-capped region is 25meV and that for the bare region is 0.8meV. The results can attribute to the nitrogen reorganization in the GaNAs/GaAs SQW. It is also shown that the nitrogen reorganization can be obviously enhanced by SiO2 cap-layer. A simple model is used to describe the SiO2-enhanced blueshift of the LTPL peak energy. The estimated activation energy of the N atomic reorganization for the samples annealing with and without SiO2 cap-layer are 2.9eV and 3.1eV, respectively.

Observation of electric current induced by optically injected spin current

Linearly polarized light at normal incidence injects a spin current into a strip of two-dimensional electron gas with Rashba spin-orbit coupling. The authors report observation of an electric current when such light is shed on the vincinity of the junction in a crossbar-shaped InGaAs/InAlAs quantum well Rashba system. The polarization dependence of this electric current was experimentally observed to be the same as that of the spin current. The authors attribute the observed electric current to the scattering of the optically injected spin current at the crossing. (c) 2007 American Institute of Physics.

Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy

Rapid thermal annealing (RTA) has been demonstrated as an effective way to improve the crystal quality of GaInNAs(Sb) quantum wells (QWs). However, few investigations have been made into its application in laser growth and fabrication. We have fabricated 1.3 mu m GaInNAs lasers, both as -grown and with post-growth RTA. Enhanced photoluminescence (PL) intensity and decreased threshold current are obtained with RTA, but the characteristic temperature T-o and slope efficiency deteriorate. Furthermore, T-o has an abnormal dependence on the cavity length. We attribute these problems to the deterioration of the wafer's surface. RTA with deposition Of SiO2 was performed to avoid this deterioration, T-o was improved over the samples that underwent RTA without SiO2. Post-growth and in situ annealing were also investigated in a 1.55 mu m GaInNAsSb system. Finally, continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength over 1.55 mu m was realized by introducing an in situ annealing process. (c) 2007 Elsevier B.V. All rights reserved.

Intrasubband and intersubband transitions in GaAs/AlxGa1-xAs multiple quantum wells

Infrared absorption in GaAs/AlxGa1-xAs multiple quantum wells is investigated using a polarizer. Two main peaks, with wave numbers 723 and 1092 cm(-1), are observed. The peak with wave number 1092 cm(-1) corresponds to the 0 -> 1 intersubband transition, while the other one corresponds to the intrasubband transition. The polarized absorbance is one order of magnitude higher than the unpolarized one. The authors attribute the intrasubband transition to the plasma oscillation in the quantum wells.