Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well
Data(s) |
2004
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Resumo |
Effects of SiO2 encapsulation and rapid thermal annealing on the optical properties of a GaNAs/GaAs single quantum well (SQW) are studied by low-temperature photoluminescence (LTPL). After annealing at 800degreesC for 30s, a blueshift of the LTPL peak energy for the SiO2-capped region is 25meV and that for the bare region is 0.8meV. The results can attribute to the nitrogen reorganization in the GaNAs/GaAs SQW. It is also shown that the nitrogen reorganization can be obviously enhanced by SiO2 cap-layer. A simple model is used to describe the SiO2-enhanced blueshift of the LTPL peak energy. The estimated activation energy of the N atomic reorganization for the samples annealing with and without SiO2 cap-layer are 2.9eV and 3.1eV, respectively. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Xu, YQ; Zhang, W; Niu, ZC; Wu, RH; Wang, QM .Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well ,CHINESE PHYSICS LETTERS,MAR 2004,21 (3):521-523 |
Palavras-Chave | #光电子学 #MOLECULAR-BEAM EPITAXY |
Tipo |
期刊论文 |