Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c Gamma 1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.

National Basic Research Program of China 2007CB613404 National Natural Science Foundation of China 60676027 50672079Key Projects of Fujian Science and Technology 2006H0036 Program for New Century Excellent Talents in University This work was supported by the National Basic Research Program of China (973 Program) under Grant No. 2007CB613404, the National Natural Science Foundation of China under Grant Nos. 60676027 and 50672079, the Key Projects of Fujian Science and Technology (Contact No. 2006H0036), and Program for New Century Excellent Talents in University.