A theoretical model for the tilt of the GaAs/Si epilayers

The crystallographic tilt of the epilayers with respect to their substrates has been observed in many heteroepitaxial systems. Many models have been proposed to explain this phenomenon, but none of them is suitable for the large mismatched system, such as GaAs/Si. Here a new model is proposed for GaAs/Si epilayers, which can also be used in other large mismatched systems. The magnitude of the tilt calculated from this model coincide well with the experimental results. Especially, this model can correctly predict the tilt direction of the GaAs/Si epilayers.

Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections

We improved the method previously used to determine the lattice constants and misorientation of GaAs/Si by recording the patterns of X-ray (004) and (220) reflections. The (220) reflection was measured from the (110) cross section of a GaAs/Si epilayer. The structural properties of the GaAs/Si epilayers grown by metal-organic chemical-vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were investigated. The rotation angle of GaAs/Si epilayers grown by MOCVD using an a-Si buffer layer is very small and the lattice constants of these GaAs/Si epilayers agree quite well with elastic theory.

Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer

GaAs epilayers grown on Si by metalorganic chemical vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were characterized by deep-level transient spectroscopy (DLTS). Six electron traps with activation energies of 0.79, 0.67, 0.61, 0.55, 0.53 and 0.32 eV below the conduction band were determined by fitting the experimental spectra. Two of the levels, C (0.61 eV) and F (0.32 eV), were first detected in GaAs epilayers on Si and identified as the metastable defects M3 and M4, respectively. In order to improve the quality of GaAs/Si epilayers, another GaAs layer was grown on the GaAs/Si epilayers grown using MOCVD. The deep levels in this regrown GaAs epilayer were also studied using DLTS. Only the EL2 level was found in the regrown GaAs epilayers. These results show that the quality of the GaAs epilayer was greatly improved by applying this growth process.

蓝宝石衬底上单晶InN外延膜的RF-MBE生长

采用低温氮化铟(InN)缓冲层，利用射频等离子体辅助分子束外延(RF-MBE)方法在蓝宝石衬底上获得了晶体质量较好的单晶InN外延膜．用光学显微镜观察所外延的InN单晶薄膜，表面无铟滴．InN(0002)双晶X射线衍射摇摆曲线的半高宽为14′；用原子力显微镜测得的表面平均粗糙度为3．3nm；Hall测量表明InN外延膜的室温背景电子浓度为3．3×10^18cm^3，相应的电子迁移率为262cm^2／(V·s)．

基于空盒自适应生成的动态场景光线跟踪计算

提出了一项光线跟踪新技术,能有效提高光线在空白区域的行进速度.该技术首先用一种新方法创建均匀空间网格,然后用较少的空盒自适应聚集空的空间网格,以加快光线跟踪的计算.新加速结构的创建时间复杂度和空间复杂度均是O(n),而相应的光线跟踪计算的时间复杂度为O(logn),与kd树结构相当.当该结构与已有的一些加速结构结合后,能很好地处理大规模动态场景.比如,光线逐根跟踪且计算二次衍生光线时,新技术可在普通PC机上高真实感地交互绘制包含6G三角面片的多Buddha动态场景.

用激光诱导击穿光谱技术比较土豆和百合中的微量元素

激光诱导击穿光谱(LIBS)已成功地运用于固体、液体、气体样品中微量元素的测量以及微生物、细菌等的鉴别分析上,而在植物样品上面的应用则是一个较新的课题。该实验用纳秒Nd:YAG激光器击穿真空冻干的土豆、百合样品,用光纤光谱仪测量了其LIBS光谱。通过鉴别、分析LIBS光谱,得到了这两种样品中微量元素的成分。并且对土豆干和百合干中Ca,Na,K,Fe,Al,Mg六种金属元素典型谱线的强度进行了统计分析,并由此得到了样品中这六种微量元素含量的对比情况。实验结果表明土豆干中的Ca和Na等含量都明显高于百合干,而百合干中Mg的含量较高。实验结果还表明用LIBS技术检测、对比冻干植物样品中微量元素含量是一种快速、有效的分析方法。

CSRe团簇内靶的真空与分子泵监测系统的设计

介绍了国家重大科学工程项目——兰州重离子加速器冷却存储环(HIRFL-CSR)的实验环(CSRe)团簇内靶真空与分子泵监测系统。该系统主要通过一个应用程序获取各真空规及分子泵的状态值,并存入、更新Oracle数据库。浏览器上的ActiveX从Oracle中读取各设备状态值进行显示,如果状态值在警戒范围,则做出相应的控制操作。该系统在实验测试中运行良好,能满足实验的要求。

Effect of microwave and He-Ne laser on enzyme activity and biophoton emission of Isatis indigotica fort

IEECAS SKLLQG

Global iron connections between desert dust, ocean biogeochemistry, and climate

IEECAS SKLLQG