1-, 2- and 3-dimensional phenylene-based materials for optoelectronic applications

A series of oligo-phenylene dendronised conjugated polymers was prepared. The divergent synthetic approach adopted allowed for the facile synthesis of a range of dendronised monomers from a common intermediate, e.g. first and second generation fluorene. Only the polymerisation of the first generation and alkylarylamine substituted dendronised fluorene monomers yielded high molecular weight materials, attributed to the low solubility of the remaining dendronised monomers. The alkylarylamine substituted dendronised poly(fluorene) was incorporated into an organic light emitting diode (OLED) and exhibited an increased colour stability in air compared to other poly(fluorenes). The concept of dendronisation was extended to poly(fluorenone), a previously insoluble material. The synthesis of the first soluble poly(fluorenone) was achieved by the incorporation of oligo-phenylene dendrons at the 4-position of fluorenone. The dendronisation of fluorenone allowed for a polymer with an Mn of 4.1 x 104 gmol-1 to be prepared. Cyclic voltammetry of the dendronised poly(fluorenone) showed that the electron affinity of the polymer was high and that the polymer is a promising n-type material. A dimer and trimer of indenofluorene (IF) were prepared from the monobromo IF. These oligomers were investigated by 2-dimensional wide angle x-ray spectroscopy (2D-WAXS), polarised optical microscopy (POM) and dielectric spectroscopy, and found to form highly ordered smetic phases. By attaching perylene dye as the end-capper on the IF oligomers, molecules that exhibited efficient Förster energy transfer were obtained. Indenofluorene monoketone, a potential defect structure for IF based OLED’s, was synthesised. The synthesis of this model defect structure allowed for the long wavelength emission in OLED’s to be identified as ketone defects. The long wavelength emission from the indenofluorene monoketone was found to be concentration dependent, and suggests that aggregate formation is occurring. An IF linked hexa-peri-hexabenzocoronene (HBC) dimer was synthesised. The 2D-WAXS images of this HBC dimer demonstrate that the molecule exhibits intercolumnar organisation perpendicular to the extrusion direction. POM images of mixtures of the HBC dimer mixed with an HBC with a low isotropic temperature demonstrated that the HBC dimer is mixing with the isotropic HBC.

Studio delle proprieta ottiche ed elettriche di dispositivi led a confinamento quantico

In questa tesi viene descritto il funzionamento delle sorgenti di luce LED (Light Emitting Diode) a confinamento quantico, che rappresentano la nuova frontiera dell'illuminazione ad alta efficienza e durata. Nei capitoli introduttivi è descritta brevemente la storia dei LEDs dalla loro invenzione agli sviluppi più recenti. Il funzionamento di tali dispositivi fotonici è spiegato a partire dal concetto di sorgente di luce per elettroluminescenza, con particolare riferimento alle eterostrutture a confinamento quantico bidimensionale (quantum wells). I capitoli centrali riguardano i nitruri dei gruppi III-V, le cui caratteristiche e proprietà hanno permesso di fabbricare LEDs ad alta efficienza e ampio spettro di emissione, soprattutto in relazione al fatto che i LEDs a nitruri dei gruppi III-V emettono luce anche in presenza di alte densità di difetti estesi, nello specifico dislocazioni. I capitoli successivi sono dedicati alla presentazione del lavoro sperimentale svolto, che riguarda la caratterizzazione elettrica, ottica e strutturale di LEDs a confinamento quantico basati su nitruri del gruppo III-V GaN e InGaN, cresciuti nei laboratori di Cambridge dal Center for Gallium Nitride. Lo studio ha come obiettivo finale il confronto dei risultati ottenuti su LEDs con la medesima struttura epitassiale, ma differente densità di dislocazioni, allo scopo di comprendere meglio il ruolo che tali difetti estesi ricoprono nella determinazione dell'effcienza delle sorgenti di luce LED. L’ultimo capitolo riguarda la diffrazione a raggi X dal punto di vista teorico, con particolare attenzione ai metodi di valutazioni dello strain reticolare nei wafer a nitruri, dal quale dipende la densità di dislocazioni.

Klonierung und Charakterisierung der Luziferase und des Luziferin regenerierenden Enzyms aus dem marinen Schwamm Suberites domuncula

Bereits 1971 erkannte Reiswig bei einigen Schwämmen in der Kontraktion des Osculums eine Reaktion auf Licht. Nachfolgend konnte für eine Reihe von Schwämmen die Existenz von Lichtreaktionen beobachtet werden (Wapstra & van Soest, 1987). In dieser Arbeit sollten Gene eines Luziferin/Luziferase Systems im marinen Schwamm Suberites domuncula identifiziert werden, die eine Rolle bei der Bio¬lumineszenz spielen. Mit Hilfe der PCR-Technik konnten die in der cDNA-Bank identifizierten Fragmente einer Luziferase und eines Luziferin regenerierenden Enzyms erfolgreich vervollständigt, kloniert und analysiert werden. Datenbank¬analysen der abgeleiteten Aminosäuresequenzen ergeben sowohl für die Luziferase als auch für das Luziferin regenerierende Enzym Ähnlichkeiten zu den entsprechenden Proteinen aus Leuchtkäfern, wie z. B. Photinus pyralis. Ausgehend von der cDNA wurden zunächst beide Enzyme in E. coli rekombinant exprimiert und affinitätschromatographisch aufgereinigt. Für die Luziferase gelang es, spezifische Antikörper herzustellen, die im Anschluss an den im Western Blot durchgeführten Nachweis eine Identifizierung in histologischen Schwamm¬schnitten ermöglichte. Weitere Analysen konnten für Suberites domuncula sowohl im Schwammgewebe, im Proteinextrakt als auch für das rekombinante Protein die Licht-generierende Fähigkeit nachweisen. Das ermittelte in vitro Biolumineszenz-Emissionsspektrum der rekombinanten Luziferase weist eine Lichtemission im gelb-grünen Bereich des Spektrums mit einem Maximum bei 548 nm und einer Schulter bei 590 nm auf. Ausserdem bestätigte die Funktionanalyse des rekombinanten Enzyms die für Luziferasen bekannte ATP- und Temperatur¬abhängigkeit sowie den stimulierenden Effekt von Coenzym A. Die Existenz einer bioaktiven Luziferase in einem der ältesten, rezent vertretenen Metazoa deutet darauf hin, dass sich die Oxygenasefunktion der Luziferasen bereits früher entwickelte, als bisher von Viviani* vermutet. Die bisherigen Daten über die optischen Eigenschaften der Spiculae liefern gemeinsam mit den Ergebnissen dieser Arbeit – einer Licht-emittierenden Luziferase in S. domuncula – die Voraussetzungen für die mögliche Existenz eines Photorezeptionssystems in Schwämmen.

Studio di leds con diverse densita di dislocazioni tramite l'analisi del coefficiente di poole-frenkel

E' stato considerato un High-Dislocation Density Light Emitting Diode (HDD LED)ed è stato analizzato l'andamento di corrente a varie temperature. Dai risultati ottenuti è stato possibile ricavare il coefficiente di Poole-Frenkel, e da esso risalire alla densità di dislocazioni del dispositivo.

Polymer-nanoparticle composites: from orientation phenomena to optoelectronic applications

Polymer-nanoparticle hybrids show synergistic effects, demonstrating both, the unique properties of nanosized structures and the good processability and functionalities of polymeric materials. This work shows the synthesis and application of block copolymers containing a soluble, functional block and a short anchor block, which efficiently binds to the surface of nanocrystals. We functionalized anisotropic, semiconducting nanoparticles, which can be dissolved in organic and polymeric matrices upon modification. The modified nanorods have the ability to form liquid crystalline phases, which behave similar to low molecular liquid crystals with a reversible clearing behaviour. These liquid crystalline phases could also be obtained in hole conducting matrices. For a macroscopic orientation of the nanorods, electric fields were applied and a switching (in analogy to known liquid crystals) to a homeotropic orientation was observed.rnBy introduction of dye molecules in the anchor block of a hole conducting block copolymer, all essential components of a solar cell can be combined in a single particle. Light absorption of the dye induces the injection of electrons into the particles, followed by a charging, that was monitored by a special AFM technique.rnLight emitting nanocrystals were functionalized analogously with a hole transporting polymer. The stability of the particles could be enhanced by the sterically stabilizing polymer corona and the particles showed improved properties in terms of processing. We applied these hybrid materials in light emitting devices, which showed better characteristics due to an improved hole injection and well dispersed emitting particles in the active device layer.rnThe work shows the broad spectrum of properties and applications based on the synergistic effects in hybrid and composite materials.

Fluorenbasierende amphiphile Kammpolymere zur Ausbildung definierter Strukturen an Oberflächen und in Lösungen

Die Dissertation beschreibt die Darstellung und Charakterisierung von neuartigen, amphiphilen Carbazol- und Fluoren-(co)-polymeren, die infolge ihres strukturellen Aufbaus sowohl selbstorganisierende als auch optoelektronische Eigenschaften kombinierten. Zum einen wurden Kammpolymere mit konjugierten, steifen Rückgraten und flexiblen sowie konformativ schaltbaren Polyelektrolytseitenketten dargestellt und auf eine pH-abhängige Selbstorganisation in Lösung und an Oberflächen untersucht. Des Weiteren wurden neutrale, methanollösliche Polyfluorene synthetisiert, die in Kombination mit einem unpolaren Polyindenofluorenderivat zum Aufbau mehrschichtiger PLEDs mittels nasschemischer Verfahren eingesetzt wurden. Zum anderen fand die Synthese von amphiphilen Polyfluorenen statt, die als Emulgatoren zur Stabilisierung von inversen Emulsionen eingesetzt wurden. Dabei konnten mit Hilfe eines bereits für die Darstellung von anorganisch-organischen Kern-Schale-Partikeln etablierten in situ-Verfahrens formanisotrope, kristalline Zinkoxidkerne mit konjugierter Polymerhülle erhalten werden.

Donor–acceptor systems in the quest for organic semiconductors

Die letzten Jahrzehnte brachten eine Vielzahl neuer organischen Halbleiter hervor, welche erfolgreich als aktive Materialien in Bauteilen eingesetzt wurden, wie zum Beispiel Feldeffekttransistoren (FET), organische Leuchtdioden (OLED), organischen Photovoltaikzellen (OPV) und Sensoren. Einige dieser Materialien haben, obwohl sich die Technolgie noch in der „Pubertät“ befindet, die minimalen Anforderungen für eine kommerzielle Anwendung erreicht, wobei jedoch vieles noch zu entdecken, erklären und verstehen bleibt. Diese Arbeit beschreibt das Design, die Synthese und Charakterisierung neuartiger halbleitender Polymere mit speziell eingestellten optoelektronischen Eigenschaften, welche effiziente ambipolare oder n-Leitung in OFET’s und OPV’s zeigen. Das Hauptziel wurde dadurch erreicht, dass sowohl die vorteilhaften Eigenschaften des planaren, elektronenarmen heterozyklischen Bausteines Thiadiazolo[3,4-g]quinoxalin als auch von Ethinbrücken, welche den Donor (D) und den Akzeptor (A) in einem D-A-Copolymer verbinden, durch systematische Optimierung ausgenutzt wurden. Neben synthetischen Herausforderungen werden in dieser Arbeit auch detailiiete Untersuchungen der optoelektronischen Eigenschaften der hergestellten konjugierten Polymere und Modellverbindungen dargelegt. Darüber hinaus beschreibt diese Arbeit erstmals ein Beispiel für ein Polymer, welches Dreifachbindungen im Polymerrückgrat enthält, und nahezu eine ausgeglichene ambipolare Ladungsträgerleitung in OFET’s zeigt. Zusätzlich werden gemischt-valente Phenothiazine, verbrückt mittels elektronenarmen pi-Brücken wie etwa Benzo[c][2,1,3]thiadiazol, und deren Elektronentransferprozesse, im Rahmen der Marcus-Hush-Theorie, untersucht.

Tailoring, synthesis and structure-property relationships of 2,3-thienoimide based molecular materials

Organic molecular semiconductors are subject of intense research for their crucial role as key components of new generation low cost, flexible, and large area electronic devices such as displays, thin-film transistors, solar cells, sensors and logic circuits. In particular, small molecular thienoimide (TI) based materials are emerging as novel multifunctional materials combining a good processability together to ambipolar or n-type charge transport and electroluminescence at the solid state, thus enabling the fabrication of integrated devices like organic field effect transistors (OFETs) and light emitting transistor (OLETs). Given this peculiar combination of characteristics, they also constitute the ideal substrates for fundamental studies on the structure-property relationships in multifunctional molecular systems. In this scenario, this thesis work is focused on the synthesis of new thienoimide based materials with tunable optical, packing, morphology, charge transport and electroluminescence properties by following a fine molecular tailoring, thus optimizing their performances in device as well as investigating and enabling new applications. Investigation on their structure-property relationships has been carried out and in particular, the effect of different π-conjugated cores (heterocycles, length) and alkyl end chain (shape, length) changes have been studied, obtaining materials with enhanced electron transport capability end electroluminescence suitable for the realization of OFETs and single layer OLETs. Moreover, control on the polymorphic behaviour characterizing thienoimide materials has been reached by synthetic and post-synthetic methodologies, developing multifunctional materials from a single polymorphic compound. Finally, with the aim of synthesizing highly pure materials, simplifying the purification steps and avoiding organometallic residues, procedures based on direct arylation reactions replacing conventional cross-couplings have been investigated and applied to different classes of molecules, bearing thienoimidic core or ends, as well as thiophene and anthracene derivatives, validating this approach as a clean alternative for the synthesis of several molecular materials.

Trasporto di carica in cristalli organici semiconduttori

Uno dei settori che più si stanno sviluppando nell'ambito della ricerca applicata è senza dubbio quello dell'elettronica organica. Nello specifico lo studio è sospinto dagli indubbi vantaggi che questi dispositivi porterebbero se venissero prodotti su larga scala: basso costo, semplicità realizzativa, leggerezza, flessibilità ed estensione. È da sottolineare che dispositivi basati su materiali organici sono già stati realizzati: si parla di OLED (Organic Light Emitting Diode) LED realizzati sfruttando le proprietà di elettroluminescenza di alcuni materiali organici, OFET (Organig Field Effect Transistor) transistor costruiti con semiconduttori organici, financo celle solari che sfruttano le buone proprietà ottiche di questi composti. Oggetto di analisi di questa tesi è lo studio delle proprietà di trasporto di alcuni cristalli organici, al fine di estrapolarne la mobilità intrinseca e verificare come essa cambi se sottoposti a radiazione x. I due cristalli su cui si è focalizzata questa trattazione sono il 1,5-Dinitronaphtalene e il 2,4-Dinitronaphtol; su di essi è stata eseguita una caratterizzazione ottica e una elettrica, in seguito interpretate con il modello SCLC (Space Charge Limited Current). I risultati ottenuti mostrano che c'è una differenza apprezzabile nella mobilità nei due casi con e senza irraggiamento con raggi x.

Novel porphyrin amino acids as building blocks for artificial photosynthetic reaction centers : photoinduced energy and electron transfer

This thesis reports on the synthesis and characterisation of trans-(M)AB2C meso-substituted porphyrin amino acid esters (PAr) (M = 2H or Zn) with tunable electron donating and electron withdrawing Ar substituents at B positions (Ar = 4-C6H4OnBu, 4-C6H4OMe, 2,4,6-C6H2Me3, 4-C6H4Me, C6H5, 4-C6H4F, 4-C6H4CF3, C6F5). These porphyrins were used as key building blocks for photosynthetic LHC (LHC = light-harvesting antenna complex) and RC (RC = reaction center) model compounds.rnBased on free-base or zinc(II) porphyrin amino acid esters and porphyrin acids several amide linked free-base bis(porphyrins) PAr1-PAr2 (Ar1 = 2,4,6-C6H2Me3, C6F5 and Ar2 = 2,4,6-C6H2Me3, 4-C6H4F, 4-C6H4CF3, C6F5), mono metallated bis(porphyrin) PAr1-(Zn)PAr2 (Ar1 = 2,4,6-C6H2Me3 and Ar2 =4-C6H4F) and its doubly zincated complexes (Zn)PAr1-(Zn)PAr2 were prepared. In the fluorescence spectra of free-base bis(porphyrins) the porphyrin with the strongest electron donating power of Ar substituents at B positions is the light emitting unity. The emission of mono metallated bis(porphyrin) occurs only from the free-base porphyrin building block. This phenomenon is caused by an efficient energy transfer likely via the Dexter through-bond mechanism.rnLinking of anthraquinone (Q) as electron acceptor (A) to the N-terminus of porphyrin amino acid esters ((M)PAr) and aminoferrocene (Fc) as electron donor (D) to the C-terminus of the porphyrin resulting in Q-(M)PAr-Fc triads (M = 2H or Zn, Ar = 4-C6H4OnBu, 4-C6H4OMe, 2,4,6-C6H2Me3, 4-C6H4Me, C6H5, 4-C6H4F, 4-C6H4CF3, C6F5) with tunable electron density at the porphyrin chromophore. In these triads initial oxidative PET (Q←(M)PAr) and reductive PET ((M)PAr→Fc) (PET = photoinduced electron transfer) are possible. Both processes leads to an emission quenching of (M)PAr. The efficiency of the PET pathways occurring in the Marcus normal region is controlled by the specific porphyrin electron density.rnAmide-linked conjugates PAr-Fc (Ar = 2,4,6-C6H2Me3, C6F5) and Fmoc-Fc-PAr1 (N-Fmoc-Fc = N-Fmoc protected 1,1’-ferrocene amino acid; Ar1 = C6H5, 4-C6H4F, 4-C6H4CF3, C6F5) as well as hinges PAr2-Fc-PAr1 (Ar1 = C6H5, 4-C6H4F and Ar2 = 2,4,6-C6H2Me3) were studied with respect to the reductive PET. The PET driving force (−GET) in dyads increases with the increasing electron withdrawing character of Ar substituents. Additionally, intramolecular energy transfer between porphyrins PAr1 and PAr2 is feasible in the hinges via the Förster mechanism.rn

Halogen lamp and led activation of resin-modified glass ionomer restorative material. In vitro microhardness after long term storage

AIM: The purpose of this study was to evaluate the activation of resin-modified glass ionomer restorative material (RMGI, Vitremer-3M-ESPE, A3) by halogen lamp (QTH) or light-emitting diode (LED) by Knoop microhardness (KHN) in two storage conditions: 24hrs and 6 months and in two depths (0 and 2 mm). MATERIALS AND METHODS: The specimens were randomly divided into 3 experimental groups (n=10) according to activation form and evaluated in depth after 24h and after 6 months of storage. Activation was performed with QTH for 40s (700 mW/cm2) and for 40 or 20 s with LED (1,200 mW/scm2). After 24 hrs and 6 months of storage at 37°C in relative humidity in lightproof container, the Knoop microhardness test was performed. Statistics Data were analysed by three-way ANOVA and Tukey post-tests (p<0.05). RESULTS: All evaluated factors showed significant differences (p<0.05). After 24 hrs there were no differences within the experimental groups. KHN at 0 mm was significantly higher than 2 mm. After 6 months, there was an increase of microhardness values for all groups, being the ones activated by LED higher than the ones activated by QTH. CONCLUSION: Light-activation with LED positively influenced the KHN for RMGI evaluated after 6 months.

Evaluation of the reliability of high concentrator GaAs solar cells by means of temperature accelerated aging tests

ABSTRACT Evaluating the reliability, warranty period, and power degradation of high concentration solar cells is crucial to introducing this new technology to the market. The reliability of high concentration GaAs solar cells, as measured in temperature accelerated life tests, is described in this paper. GaAs cells were tested under high thermal accelerated conditions that emulated operation under 700 or 1050 suns over a period exceeding 10 000 h. Progressive power degradation was observed, although no catastrophic failures occurred. An Arrhenius activation energy of 1.02 eV was determined from these tests. The solar cell reliability [R(t)] under working conditions of 65°C was evaluated for different failure limits (1–10% power loss). From this reliability function, the mean time to failure and the warranty time were evaluated. Solar cell temperature appeared to be the primary determinant of reliability and warranty period, with concentration being the secondary determinant. A 30-year warranty for these 1 mm2-sized GaAs cells (manufactured according to a light emitting diode-like approach) may be offered for both cell concentrations (700 and 1050 suns) if the solar cell is operated at a working temperature of 65°C.

Optically triggered infrared photodetector

We demonstrate a new class of semiconductor device: the optically triggered infrared photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2−6 μm range. The detection is optically triggered by a 590 nm light-emitting diode. Furthermore, the detection gain is achieved in our device without an increase of the noise level. The novel characteristics of OTIPs open up new possibilities for third generation infrared imaging systems

Optically triggered infrared photodetector

We demonstrate a new class of semiconductor device: the optically triggered infrared photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2−6 μm range. The detection is optically triggered by a 590 nm light-emitting diode. Furthermore, the detection gain is achieved in our device without an increase of the noise level. The novel characteristics of OTIPs open up new possibilities for third generation infrared imaging systems

Research on wide-bandgap intermediate band solar cells and development of experimental techniques for their characterization

El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.