Magnetic properties of silicon doped with gadolinium

The magnetic semiconductor GdxSi1-x was prepared by low-energy dual ion-beam epitaxy. GdxSi1-x shows excellent magnetic properties at room temperature. A high magnetic moment of 10 mu(B) per Gd atom is observed. The high atomic magnetic moment is interpreted as being a result of the RKKY mechanism. The indirect exchange interaction between ions is strong at large distances due to the low state density of the carriers in the magnetic semiconductor.

Magnetic properties and rectifying behaviour of silicon doped with gadolinium

The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.

GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique

Semiconducting gadolinium silicide GdxSi samples were prepared by mass-analyzed low-energy dual ion beam epitaxy technique. Auger electron spectroscopy depth profiles indicate that the gadolinium ions are implanted into the single-crystal silicon substrate and formed 20 nm thick GdxSi film. X-ray double-crystal diffraction measurement shows that there is no new phase formed. The XPS spectra show that one type of silicon peaks whose binding energy is between that of silicide and silicon dioxide, and the gadolinium peak of binding energy is between that of metal Gd and Gd2O3. All of these results indicate that an amorphous semiconductor is formed. (C) 2002 Elsevier Science B.V. All rights reserved.

Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency

Tunnel-regenerated multiple-active-region (TRMAR) light-emitting diodes (LEDs) with high quantum efficiency and high brightness have been proposed and fabricated. We have proved experimentally that the efficiency of the electrical luminescence and the on-axis luminous intensity of such TRMAR LEDs scaled linearly approximately with the number of the active regions. The on-axis luminous intensity of such TRMAR LEDs with only 3 mum GaP current spreading layer have exceeded 5 cd at 20 mA dc operation under 15 degrees package. The high-quantum-efficiency and high-brightness LEDs under the low injection level were realized. (C) 2001 American Institute of Physics.

Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction

A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential quantum efficiency as high as 2.2 and light power output of 2.5 W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three active regions.

Raman-forbidden mode and oxygen ordering in Bi2Sr2-xLaxCuO6+gamma single crystals annealed in oxygen

A Raman-forbidden phonon mode at about 840 cm(-1) is observed popularly on the surface of pun and La-doped Bi2Sr2-xLaxCuO6+y (0 less than or equal to x less than or equal to 0.8) single crystals annealed in oxygen. A remarkable excitation dependence of this additional line is found. Based on the properties of the structure of the Bi-O layer with excess oxygen atoms and the similarity in the appearance of the Raman-forbidden modes between RBa2Cu3Ox (R = Y, Nd, Gd, Pr) and Bi2Sr2-xLaxCuO6+y systems, we attribute the manifestation of this additional line to the ordering of the interstitial oxygen in the Bi-O layers. Our results provide Raman evidences for confirming that the ordering of the movable oxygen may exist universally in high-temperature superconductors.

Syntheses, crystallographic and magnetic properties of Nd3Fe29-xCrx and other associated compounds

A systematic study of syntheses and magnetic properties of the Nd-3 Fe29-xCrx (x=4.5, 4.7, 5.0, and 5.5) compounds has been performed. The single-phase compounds of Nd3Fe29-xCrx can be formed in the range 4.5 less than or equal to x less than or equal to 5.5. The Curie temperature Tc, the saturation magnetization M-S at 4.2 K, the anisotropy field H-A at 4.2 K and room temperature, and the intra-sublattice exchange coupling parameter j(FeFe) at 4.2 K for the Nd3Fe29-xCrx compounds decrease with increasing Cr composition from x=4.5 to 5.5, respectively. Nitrogenation and carbonation, unlike hydrogenation, result mainly in improvements of the Curie temperature, the saturation magnetization and the anisotropy field at 4.2 K and room temperature for the Nd3Fe29-xCrx compounds compared with their parent compounds.

Hard magnetic properties of Sm3Fe26.7VxN4 and Sm3Fe26.7VxCy

Sm3Fe26.7V2.3N4 nitrides and Sm3Fe26.7V2.3Cy carbides have been synthesized by gas-solid phase reaction. Their hard magnetic properties have been investigated by means of additional ball-milling at room temperature. The saturation magnetization of Sm3Fe26.7V2.3N4 almost decreases linearly with increasing ball-milling time t, but that of Sm3Fe26.7V2.3Cy has no obvious change when the ball-milling time increases from t = 1 to 28 h. As a preliminary result, the maximum remanence B-r of 0.94 and 0.88 T, the coercivity mu(0i)H(C) of 0.75 and 0.25 T, and the maximum energy product (BH) of 108.5 and 39.1 kJ/m(3) for their resin-bonded permanent magnets are achieved, respectively, by ball-milling at 293 K. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

Modification of InAs quantum dot structure by the growth of the capping layer

InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. (C) 1998 American Institute of Physics.

Structure and magnetic properties of nitrides R3Fe29-xCrxN4

A systematic investigation of nitrides R3F29-xCrxN4 (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed. The nitrogen concentration in the nitride R3Fe29-xCrxNy was determined to be y = 4. Nitrogenation leads to a relative volume expansion of about 5.3%. The lattice constants and unit cell volume decrease with increasing rare earth atomic number from Nd to Dy, reflecting the lanthanide contraction. In average, the increase of Curie temperature upon nitrogenation is about 200 K, compared with its parent compound. The nitrogenation also results in a remarkable improvement in the saturation magnetization and anisotropy fields for R3Fe29-x CrxN4 at 4.2 K and room temperature, compared with their parent compounds. A spin reorientation of Nd3Fe24.5Cr4.5N4 occurs at around 368 K, which is 138 K higher than that of Nd3F24.5Cr4.5. Magnetohistory effects of R3Fe29-xCrxN4 (R = Nd and Sm) are observed in a low field of 0.04 T. First-order magnetization process occurs in Sm3Fe24.0Cr5.0N4 in magnetic fields of around 3.0 T at 4.2 K. After nitrogenation the easy magnetization direction of Sm3Fe24.0C5.0 is changed from the easy-cone structure to the uniaxial. The excellent intrinsic magnetic properties of Sm3Fe24.0Cr5.0N4 make this compound a hopeful candidate for new high-performance permanent magnets.

Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.

含钇的耐热稀土镁合金的结构和性能研究

耐热、高强和抗高温蠕变的稀土镁合金是镁合金研究与开发的重要研究课题之一。本论文主要集中于对Y和其它稀土元素复合加入镁后的镁合金结构和性能的研究。探讨了Y与其它重稀土元素如Gd、Ho复合加入镁后的镁合金的时效硬化行为和结构性能，也研究了Y与混合轻稀土金属如富铈、富镧复合加入镁后对镁合金性能的影响。还对新型Mg-Y压铸镁合金的开发为目标，探讨了这一新型合金开发的可行性。具体结果如下： 1. 研究了Y加入到Mg-10Gd-0.4Zr合金中对合金的时效硬化和性能的影响规律和Mg-10Gd-6Y-0.4Zr合金在225℃和250℃时效210h内的沉淀析出相的转变以及合金的时效硬化行为。随着Y含量的增加，合金的时效硬化反应显著增强，合金的高温拉伸强度随Y含量的增加而线性增强，其原因是合金中的β'相有好的热稳定性。 2. 研究了Y和Ho元素复合加入镁后镁合金的时效硬化反应和组织性能。研究发现，在250℃时效时，当Y和Ho元素复合加入镁后，合金固溶体的时效分解速度加快，促进了合金的时效硬化，并且，随着Y含量的增加，合金的时效硬化反应增强，力学性能也相应提高。β-Mg24Y(Ho)5和（或）β'相对合金的时效硬化起了主要的作用，而且，位错密度增加也是合金性能提高的重要原因。 3. 探讨了Y和混合轻稀土富铈（和富镧）复合加入镁后对镁合金的性能影响。富铈和富镧在镁中低的固溶度导致单独加入镁后的时效硬化反应很弱，当Y和混合轻稀土富铈（和富镧）复合加入后，合金的时效硬化反应明显增强，并随着Y含量的增加，时效硬化的反应也相应增强。富铈和富镧对Mg-Y合金固溶体的时效分解有明显的促进作用。除了基体中的沉淀强化外，仍然停留在晶界上的Mg12RE稀土相对合金的晶界也有明显的强化作用。 4. 研究开发了具有良好的力学性能和高温抗蠕变性能、低含量Y、Gd的稀土镁合金，实验结果表明该合金是一种有良好应用前景的压铸镁合金。

镁-锌-稀土系合金的组织和性能研究

　　制备了Mg-4.5wt%Zn-1～5wt%RE系合金（RE元素包括轻稀土：La、Ce、Nd、Sm；重稀土：Gd和Y），研究了铸态和热处理态合金的组织和性能。（1）适量的稀土元素均可细化合金晶粒，其中轻稀土元素的细化效果好于重稀土元素；（2）含轻稀土元素合金中的析出相主要为(Mg,Zn)17RE2和Mg4Zn7，而含重稀土元素的合金中的析出相主要为MgZnxREy(Mg3Zn6RE, Mg3RE2Zn3)和Mg4Zn7；（3）加入稀土元素后，合金的强度提高；稀土含量相同时，含轻稀土元素的强化效果较好。Mg-4.5Zn-1Ce合金具有最高的强度。T5处理态合金的抗拉强度、屈服强度和伸长率分别为236 MPa、111 MPa和15.8%，T6处理态合金分别为233 MPa、131 MPa和8.9%。强度提高的主要原因是合金中生成了大量的纳米级Mg4Zn7强化相，以及晶界沉淀相的连续性降低；（4）含重稀土元素合金的时效硬化效果高于含轻稀土元素的合金，经T6处理后，含重稀土元素合金的断裂强度和屈服强度均提高，而含轻稀土元素合金只有屈服强度提高。 　　研究了挤压变形Mg-4.5Zn-1Ce合金的组织和性能。473 K时效后峰值态合金具有较高抗拉强度和屈服强度，其值分别为291 MPa和239 MPa，比铸态分别提提高了55 MPa和128 MPa。高强度产生的原因是合金中生成了大量棒状和点状混合结构的纳米级Mg4Zn7强化相和晶粒的细化。 　　应用Edge-to-edge匹配模型成功预测了MgZn2/α-Mg体系中的位相关系，扩大了该模型的应用范围。并对模型进行了改进，主要体现在：1)确定匹配方向的平面上所有原子的中心位置需在平面上；2）匹配方向之间可任意配对。应用优化后的模型预测了Mg17Al12/α-Mg体系中的位相关系，预测结果与实验结果的吻合率为4/6，好于原模型预测的吻合率4/8。另外，使用优化后的模型，成功的预测出了理想的Burgers位相关系，从而证实了该位相关系是确实存在的，而不是near Burgers位相关系测定的误差。使用优化后的模型还成功的解释了该合金体系中稀土元素的晶粒细化机制和沉淀强化机制。

新型靶向性磁共振成像造影剂的合成及性质研究

磁共振成像(magnetic resonance imaging, MRI)以其分辨率高、对人体无电离辐射损伤、多参数成像等优点而得到迅速发展和广泛应用。目前，MRI已从单一形态学向分子影像学的深度发展，对医学临床和医学研究产生了巨大影响。为了提高病变部位与正常组织间信号的对比度，约30%~40%的诊断需要使用磁共振成像造影剂。它是一类能缩短成像时间、提高成像对比度和清晰度、显示组织器官功能状态的诊断用药。下一代磁共振成像造影剂的设计目标将集中在对特定组织或器官具有选择性或靶向性、高弛豫性能和减少用药剂量等方面。本论文在此领域的研究内容可归纳如下： (1) 以多糖为载体的MRI造影剂 设计合成了阿拉伯半乳聚糖修饰的Gd-DTPA配合物(Gd-DTPA-CMAG-An)和葡聚糖修饰的Gd-DTPA配合物(Gd-DTPA-CMDn-Cyst)。通过体外弛豫时间测试和体内磁共振成像实验研究了Gd-DTPA-CMAG-An弛豫性能、器官选择性、体内滞留时间和代谢情况，结合体外稳定性综合评价了其应用于临床的可能性。研究结果表明，Gd-DTPA-CMAG-An配合物在水溶液中弛豫性能为Gd-DTPA的1.4倍左右，Gd-DTPA-CMAG-A2对肝脏信号的增强效果是Gd-DTPA的2.0倍左右，并且能在较长时间内产生良好稳定的增强效果。这与肝脏表面的去唾液酸糖蛋白受体的专一性识别有关。Gd-DTPA-CMAG-A2良好的肝脏选择性和肾脏代谢能力，有望成为有前景的肝脏选择性造影剂。通过小鼠MRI实验初步评价了Gd-DTPA-CMDn-Cyst配合物造影剂对血管信号的增强作用。Gd-DTPA-CMD4-Cyst对血管产生了良好的增强效果，并且能在较长时间内对血管产生良好稳定的增强，从而有充分的时间优化成像窗口获得理想的成像效果。但造影剂在体内的分布和代谢是一个非常复杂的过程，Gd-DTPA-CMD4-Cyst在血液中的滞留情况及能否用于血管造影仍需进一步的实验证实。 (2) MnNaY 型分子筛作为胃肠道MRI造影剂 离子交换法制备了Mn2+交换的NaY分子筛MnNaY，从对造影剂的一般要求出发，对其酸性水溶液中的稳定性和离子交换选择性、体外弛豫性能和体内成像等方面进行研究，并对器官的选择性及体内滞留时间和代谢情况进行了分析，从而对其应用于临床的可能性进行了探讨。研究结果表明，MnNaY悬浮液能长时间在较低的酸性条件下保持良好的稳定性，其弛豫效率高于目前临床所用造影剂Gd-DTPA，随Mn2+的含量在NaY分子筛中的增加(3.2%~5.2%)，弛豫效率反而降低。MnNaY (3.2% Mn)对胃部具有良好的增强效果，并且能在较长时间内产生良好稳定的增强效果，有利于获得理想的成像效果。它是一种比较好的潜在口服胃肠道造影剂。 (3) 甘草酸为载体的MRI造影剂 合成了甘草酸为载体的配合物GL-(A-Gd-DTPA)3，对其体外弛豫性能和体内成像等方面进行了研究，结果表明，其在水中的弛豫效率约为目前临床所用造影剂Gd-DTPA的1.4倍，体内成像表明它能在较长时间内对大鼠肝脏产生良好稳定的增强效果，这是由于肝(实质)细胞膜表面存在GL和GA受体，Gd-DTPA 以GL为载体后具有良好的趋肝性与肝细胞靶向性。 (4) 中性的Gd-DTPA双酰胺衍生物 合成了两种中性的Gd-DTPA双酰胺衍生物Gd-DTPA-BBA和Gd-DTPA-BtBA，其弛豫效率与Gd-DTPA相近，对肝脏和肾脏具有较好的增强效果，由于这两种配合物均为电中性化合物，这样配合物溶液的渗透压值与血液的渗透压值较接近，可能更易为生物体所接受。

稀土分离过程的平衡反应和动力学研究

本论文共分六章，论文首先综述了近年稀土溶剂萃取最新出现的一些萃取体系及萃取方法，然后用溶剂萃取法系统研究了新萃取剂 PT-2 萃取稀土(III)、Cyanex 923 和 Cyanex 925 萃取铈(IV)、钍和稀土(III)的性质，推导层流型恒界面池的理论基础并用恒界面池法研究 Cyanex 272、PT-2 萃取稀土动力学，用高效离心分配色层仪(HPCPC) PT-2、Cyanex 302 和 Cyanex 272-P507 混合体系分离稀土(III)的规律，本论文还在大量实验数据的基础上，提出从氟碳铈矿中提取稀土的具有创新性的绿色工艺流程。论文第一章综述了近年衡土溶剂萃取的研究成果，为探求优于应用于工业生产的萃取稀土(III)的 P507 体系以及萃取钇的环烷酸体系，人们合成大量的有机磷类、羧酸类、苯胲类萃取剂并研究了它们萃取稀土的性能，将现有的萃取剂进行优化组合得到许多稀土的协同萃取体系，还将结晶反萃、还原反萃等方法应用于稀土分离过程。第二章用两相滴定法在测定 PT-2 的 K_d、K_2 等基本常数基础上，研究了 PT-2 的正庚烷溶液在盐酸、硝酸介质中萃取 15 个稀土离子（除了 Pm 外）的分配规律及萃取机理，同硫酸体系、高氯酸体系萃取平衡进行了对比，得到一些在理论上和实际上很有价值的结果。首次发现高位阻的酸性膦酸类萃取剂 PT-2 萃取轻、重稀土(III)时存在不同的机理，在盐酸、硝酸和硫酸体系中， PT-2 萃取轻稀土(III)为阳离子交换机理， PT-2 萃取重稀土时，阳离子交换机理和溶剂缔合机理共存；高氯酸介质中，由于高氯酸根离子难以同稀土(III)形成络合物， PT-2 萃取稀土(III)的机理符合一般的酸性膦酸酯的萃取规律，为阳离子交换机理。第三章探求了多种纯化 Cyanex 923 和 Cyanex 925 的途径，得出了较为行之有效的纯化方法，系统地研究了 Cyanex 923 从硫酸和硝酸介质中萃取 Ce(IV)、Th、La 和 Gd的规律，确定了萃合物的组成，计算了 lgK、ΔG、ΔH、ΔS 等热力学常数。 Cyanex 923 对 Ce(IV)、 Th(IV)的萃取在高酸度时随酸度的增大而降低，而 Ce(IV)、 Th(IV)同时萃取时， Th(IV)的萃取受到 Ce(IV)的抑制。发现 Cyanex 923 是一种良好 Ce(IV)的萃取剂，可用于铈从稀土(III)、钍中的分离、富集，具有很好的应用前景。第四章在层流型恒界面池的传质过程理论研究基础上，研究了二 (2,4,4-三甲基戊基)膦酸(HBTMPP)、PT-2 萃取 Er(III)的动力学，测定了流体线性流速、有机相浓度、水相浓度和酸度、温度及界面面积等因素对萃取速率的影响，对萃取的控制模式作出判断，为 Cyanex 272、 PT-2 在稀土湿法冶金中的应用提供基础参数。推导出层流型恒界面池中扩散控制模式下的萃取过程善于传质量和扩散层厚度两个基本公式。PT-2 萃取 Er(III)的过程属于扩散控制模式，在不同参数（温度、线性流速、界面面积、两相组成等）条件下，以 ln[(1/β + 1)C_b~a/C_(b,0)~a - 1/β] 对时间 t 作图得到都为直线，这些参数的变化对萃取的控制模式没有影响。萃取速率随温度、线性流速、界面面积等的变化规律也表明，该萃取过程为一扩散控制模式。根据萃取速率随线性流速、界面面积和温度的影响推断 HBTMPP 萃取 Er(III)为扩散控制和化学反应共同作用的混合控制模式。利用稳态法推导出该萃取过程的初始速率方程，该速率方程能和实验结果较好吻合。第五章用 HPCPC 研究 PT-2、Cyanex 302 及 Cyanex 272-P507 体系分离重稀土元素，评估 HPCPC 的性能及萃取剂的萃取性能，考察了流动相的流速、 pH 及 HPCPC 的转速等对分离效率的影响，并对这些体系萃取重稀土(III)的机理进行了探讨。发现流速对 HPCPC 的分离效率有显著的影响，随流速的增大，理论板数降低，分离度减小；理论塔板数和分离度随转速的变化无明显的变化；在 D 值相同时， Vs/Vm 越小，理论塔板数 N 越大；pH 越高，D 越大，理论塔板数则越低；萃取剂的浓度越高，理论塔板数越低。用 HPCPC 梯度洗脱法在 Cyanex 302 体系中只经过一次运行可将轻、重稀土混合物 La(III)、Sm(III)、Dy(III)和 Tm(III)分离。第六章针对攀西稀土矿 冶炼工艺中存在由于稀土收率低、放射性钍未得到分离和利用、存在二个放射性废渣和放射性废水等问题，采用溶剂萃取法，从攀西矿氧化焙烧－硫酸浸出液中萃取分离钍和铈(IV)。研究了 N1923 从氟碳铈矿硫酸浸出液中萃取分离钍和铈(IV)的工艺，并在此基础上提出从攀西矿中萃取分离铈(IV)、钍和提取氯化稀土的流程 I。用 N1923 萃取铈(IV)、钍，稀硫酸为洗液，形成含四价铈及钍的有机相和含三价稀土元素的萃余液，实现铈、钍与三价稀土的萃取分离。由于用含过氧化氢的硫酸溶液反萃铈(IV)困难，用含过氧化氢的硝酸溶液反萃铈(IV)、钍，再以 Cyanex 923 萃取钍，实现钍和铈(III)的分离。还研究了用 S501 萃取萃取铈(IV)工艺，以稀硫酸为洗液，用含过氧化氢的硫酸溶液为反萃取液反萃铈(IV)。解决了萃取过程铈(IV)的还原性问题；探明了氟离子对萃取过程的影响以及在料液、洗液、反萃取液中加入硼酸的作用，在大量数据的基础上提出了工艺的各成分的组成。