Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis

Spin-orbit interactions in a two-dimensional electron gas were studied in an InAlAs/InGaAs/InAlAs quantum well. Since weak anti localization effects take place far beyond the diffusive regime, (i.e., the ratio of the characteristic magnetic field, at which the magnetoresistance correction maximum occurs, to the transport magnetic field is more than ten) the experimental data are examined by the Golub theory, which is applicable to both diffusive regime and ballistic regime. Satisfactory fitting lines to the experimental data have been achieved using the Golub theory. In the strong spin-orbit interaction two-dimensional electron gas system, the large spin splitting energy of 6.08 meV is observed mainly due to the high electron concentration in the quantum well. The temperature dependence of the phase-breaking rate is qualitatively in agreement with the theoretical predictions. (C) 2009 The Japan Society of Applied Physics

Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure

The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of an AlxGa1-xN/GaN heterostructure is calculated. The accurate wave functions and electron distributions of the three lowest subbands for a typical structure are obtained by solving the Schrodinger and Poisson equations self-consistently. Based on the model of treating dislocation as a charged line, a simple scattering potential, a square-well potential, is utilized. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data. It is also found that the dislocation scattering dominates both the low- and moderate-temperature mobilities and accounts for the nearly flattening-out behavior with increasing temperature. To clarify the role of dislocation scattering all standard scattering mechanisms are included in the calculation.

Magnetointersubband oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Shubmkov-de Haas (SdH) measurements are performed over a temperature range of 1.5-20K in AL(0.22)Ga(0.78)N/GaN heterostructures with two subbands occupied. In addition to an intermodulation between two sets of SdH oscillations from the first and second subbands, a beating in oscillatory magnetoresistance at 12K is observed, due to the mixing of the first subband SdH oscillations and 'magnetointersubband' (MIS) oscillations. A phase shift of pi between the SdH and MIS oscillations is also clearly identified. Our experimental results, i.e. that the SdH oscillations dominate at low temperature and MIS oscillations dominate at high temperature, fully comply with the expected behaviour of MIS oscillations.

Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain

The circular photogalvanic effect (CPGE) of the two-dimensional electron gas (2DEG) in Al0.25Ga0.75N/GaN heterostructures induced by infrared radiation has been investigated under uniaxial strain. The observed photocurrent consists of the superposition of the CPGE and the linear photogalvanic effect currents, both of which are up to 10(-2) nA. The amplitude of the CPGE current increases linearly with additional strain and is enhanced by 18.6% with a strain of 2.2x10(-3). Based on the experimental results, the contribution of bulk-inversion asymmetry (BIA) and structure-inversion asymmetry (SIA) spin splitting of the 2DEG to the CPGE current in the heterostructures is separated, and the ratio of SIA and BIA terms is estimated to be about 13.2, indicating that the SIA is the dominant mechanism to induce the k-linear spin splitting of the subbands in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces. (C) 2007 American Institute of Physics.

Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems

Magneto-transport measurements have been carried out on three heavily Si delta-doped In-0.52 Al-0.48 As/In-0.53 Ga-0.47 As/In-0.52 A(10.48) As single quantum well samples in which two subbands were occupied by electrons. The weak anti-localization (WAL) has been found in such high electron mobility systems. The strong Rashba spin-orbit (SO) coupling is due to the high structure inversion asymmetry (SIA) of the quantum wells. Since the WAL theory model is so complicated in fitting our experimental results, we obtained the Rashba SO coupling constant alpha and the zero-field spin splitting Delta(0) by an approximate approach. The results are consistent with that obtained by the Shubnikov-de Haas (SdH) oscillation analysis. The WAL effect in high electron mobility system suggests that finding a useful approach for deducing alpha and Delta(0) is important in designing future spintronics devices that utilize the Rashba SO coupling.

A two-dimensional photonic crystal slab mirror with silicon on insulator for wavelength 1.3 mu m

A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3 mu m with a silicon-on-insulator (Sol) substrate is designed by the three-dimensional plane wave expansion method. For TE-like modes, the bandgap in the F-K direction is from 1087nm to 1559nm. The central wavelength in the bandgap is about 1.3 mu m, hence the incident light at wavelength 1.3 mu m will be strongly reflected. Experimentally, such a photonic crystal slab is fabricated on an SOI substrate by the combination of EBL and ICP etching. The measurement of its transmission characteristics shows the bandgap edge in a longer wavelength is about 1540mn. The little discrepancy between the experimental data and the theoretical values is mainly due to the size discrepancy of the fabricated air holes.

Binding energy of excitons bound to neutral donors in two-dimensional semiconductors

The binding energies of excitons bound to neutral donors in two-dimensional (2D) semiconductors within the spherical-effective-mass approximation, which are nondegenerate energy bands, have been calculated by a variational method for a relevant range of the effective electron-to-hole mass ratio sigma. The ratio of the binding energy of a 2D exciton bound to a neutral donor to that of a 2D neutral donor is found to be from 0.58 to 0.10. In the limit of vanishing sigma and large sigma, the results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.

Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.

Two-dimensional photovoltaic dark spatial solitons of partially spatially incoherent light

We report a successful experimental observation of two-dimensional photovoltaic dark solitons in an anisotropic crystal with partially spatially incoherent light beams. This kind of solitons results from the bulk photovoltaic effect, which depends on the direction of propagation of the optical beam and on the orientation of the intensity gradient, with respect to the principal axes of the crystal.

Wave generation by the falling rock in the two-dimensional wave tank

Wave generation by the falling rock in the two-dimensional wave tank is experimentally and numerically studied, where the numerical model utilizes the boundary element method to solve the fully nonlinear potential flow theory. The wave profiles at different times are measured in the laboratory, which are also used to test the numerical model. Comparisons show that the experimental and numerical results are in good agreement, and the numerical model can be used to simulate the wave generation due to the submarine rock falling. Further numerical tests on the influences of the rock size, density, initial position and the falling angle on the wave elevation of the generated waves are performed, respectively. The results show that the size and density of the rock have strong effects on the maximum elevation of the generated wave, while the effects of the initial position and the falling angle of the rock are also significant. When the size or the density of the rock increases, the maximum elevation of the generated wave increases. The same effect on the generated wave would be produced if the initial position of the rock becomes closer to the surface, or the falling angle between the falling route and the vertical direction turns larger. In addition, the present numerical tests reveal that the submarine rock falling provides a new generation method for the breaking wave in the wave tank.

Topological changes in a two-dimensional foam cluster

Cox, S.J., Vaz, M.F. and Weaire, D. (2003) Topological changes in a two-dimensional foam cluster. The European Physical Journal E - Soft Matter . 11:29-35.

The transition from two-dimensional to three-dimensional foam structures

Cox, Simon; Weaire, D.; F?tima Vaz, M., (2002) 'The transition from two-dimensional to three-dimensional foam structures', The European Physical Journal E - Soft Matter 7(4) pp.311-315 RAE2008

Fiber-optic interferometric two-dimensional scattering-measurement system.

We present a fiber-optic interferometric system for measuring depth-resolved scattering in two angular dimensions using Fourier-domain low-coherence interferometry. The system is a unique hybrid of the Michelson and Sagnac interferometer topologies. The collection arm of the interferometer is scanned in two dimensions to detect angular scattering from the sample, which can then be analyzed to determine the structure of the scatterers. A key feature of the system is the full control of polarization of both the illumination and the collection fields, allowing for polarization-sensitive detection, which is essential for two-dimensional angular measurements. System performance is demonstrated using a double-layer microsphere phantom. Experimental data from samples with different sizes and acquired with different polarizations show excellent agreement with Mie theory, producing structural measurements with subwavelength accuracy.

The Validation of a Two-Dimensional Transient Catalyst Model for Direct Injection Two-Stroke Applications

This paper describes the detailed validation of a computer model designed to simulate the transient light-off in a two-stroke oxidation catalyst. A plug flow reactor is employed to provide measurements of temperature and gas concentration at various radial and axial locations inside the catalyst. These measurements are recorded at discrete intervals during a transient light-off in which the inlet temperature is increased from ambient to 300oC at rates of up to 6oC/sec. The catalyst formulation used in the flow reactor, and its associated test procedures, are then simulated by the computer and a comparison made between experimental readings and model predictions. The design of the computer model to which this validation exercise relates is described in detail in a separate technical paper. The first section of the paper investigates the warm-up characteristics of the substrate and examines the validity of the heat transfer predictions between the wall and the gas in the absence of chemical reactions. The predictions from a typical single-component CO transient light-off test are discussed in the second section and are compared with experimental data. In particular the effect of the temperature ramp on the light-off curve and reaction zone development is examined. An analysis of the C3H6 conversion is given in the third section while the final section examines the accuracy of the light-off curves which are produced when both CO and C3H6 are present in the feed gas. The analysis shows that the heat and mass transfer calculations provided reliable predictions of the warm-up behaviour and post light-off gas concentration profiles. The self-inhibition and cross-inhibition terms in the global rate expressions were also found to be reasonably reliable although the surface reaction rates required calibration with experimental data.

Two-dimensional hygrothermal transfer in porous building materials

A two-dimensional mathematical model for evaluating the simultaneous heat and moisture migration in porous building materials was proposed. Vapor content and temperature were chosen as the principal driving potentials. The numerical solution was based on the control volume finite difference technique with fully implicit scheme in time. Two validation experiments were developed in this study. The evolution of transient moisture distributions in both one-dimensional and two-dimensional cases was measured. A comparison between experimental results and those obtained by the numerical model proves that they are fully consistent with each other. The model can be easily integrated into a whole building heat, air and moisture transfer model. Another main advantage of the present numerical method lies in the fact that the required moisture transport properties are comparatively simple and easy to determine.