Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated an electroabsorption modulator and semiconductor optical amplifier monolithically integrated with novel dual-waveguide spot-size converters (SSC) at the input and output ports for low-loss coupling to a planar light-guide circuit silica waveguide or cleaved single-mode optical fibre. The device was fabricated by means of selective-area MOVPE growth, quantum well intermixing and asymmetric twin waveguide technologies with only a three-step low-pressure MOVPE growth. For the device structure, in the SOA/EAM section, a double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge structure (BRS) was incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of easy processing of the ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB dc and more than 10 GHz 3 dB bandwidth is successfully achieved, The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Monolithically integrated laser diode and electroabsorption modulator with dual-waveguide spot-size converter input and output

We have demonstrated a 1.60 mu m ridge-structure laser diode and electroabsorption modulator monolithically integrated with buried-ridge-structure dual-waveguide spot-size converters at the input and output ports for low-loss coupling to a cleaved single-mode optical fibre by means of selective area growth and asymmetric twin waveguide technologies. The devices emit in single transverse and quasi-single longitudinal modes with a side mode suppression ratio of 25.6 dB. These devices exhibit 3 dB modulation bandwidth of 15.0 GHz and modulator extinction ratios of 14.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3 degrees x 10.6 degrees, respectively, resulting in 3.0 dB coupling loss with a cleaved single-mode optical fibre.

Enhancement of the far-field output power and the properties of the very-small-aperture lasers

We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 x 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/mu m(2). Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics.

Structure optimization of field-plate AlGaN/GaN HEMTs

AlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC with varying field-plate length and gate-drain spacing were fabricated and analyzed. The classical small signal FET model and the well-known ColdFET method were used to extract the small signal parameters of the devices. Though the devices with field plates exhibited lower better f(T) characteristic, they did demonstrate better f(max), MSG and power density performances than the conventional devices without field plate. Besides, no independence of DC characteristic on field-plate length was observed. With the increase of the field-plate length and the gate-drain spacing, the characteristic of f(T) and f(max), degraded due to the large parasitic effects. Loadpull method was used to measure the microwave power performance of the devices. Under the condition of continuous wave at 5.4 GHz, an output power density of 4.69 W/mm was obtained for device with field-plate length of 0.5 mu m and gate-drain length of 2 mu m. (c) 2006 Elsevier Ltd. All rights reserved.

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Enhancement of the electrical properties in an AlGaN/GaN high electron mobility transistor (HEMT) structures was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer. The structures were grown on 50 mm semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition (MOCVD). The room temperature (RT) two-dimensional electron gas (2DEG) mobility was as high as 2215 cm(2)/V s, with a 2DEG concentration of 1.044 x 10(13)cm(-2). The 50 mm HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with a resistance uniformity of 2.02%. The 0.35 Pin gate length HEMT devices based on this material structure, exhibited a maximum drain current density of 1300 mA/mm, a maximum extrinsic transconductance of 314 mS/mm, a current gain cut-off frequency of 28 GHz and a maximum oscillation frequency of 60 GHz. The maximum output power density of 4.10 W/mm was achieved at 8 GHz, with a power gain of 6.13 dB and a power added efficiency (PAE) of 33.6%. (c) 2006 Elsevier B.V. All rights reserved.

1.55-mu m Ridge DFB laser and electroabsorption modulator integrated with buried-ridge-stripe dual-waveguide spot-size converter output

A 1.55-mu m ridge distributed feedback laser and electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-waveguide spot-size converter (SSC) at the output port for low-loss coupling to a cleaved single-mode optical fiber was fabricated by means of selective area growth, quantum-well intermixing, and dual-core technologies. These devices exhibit threshold current of 28 mA, 3-dB modulation bandwidth of 12.0 GHz, modulator extinction ratios of 25.0-dB dc. The output beam divergence angles of the SSC in the horizontal and vertical directions are as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.2-dB coupling loss with a cleaved single-mode optical fiber.

Size tolerance analysis of a 4X4 tapered multimode interference coupler in a silicon-on-insulator structure

Size tolerance of a 4X4 general interference tapered multimode interference (MMI) coupler in a silicon-on-insulator (SOI) structure is investigated by means of a 2-D finite difference beam propagation method (2D-FDBPM), together with an effective refractive index method (EIM). The results show that the tapered multimode interference coupler exhibits relatively larger size tolerance when light is launched from the edgeport than from midport, though it has much better output power uniformity when light is launched from midport. Besides that, it can reduce the device length greatly. The 4X4 general interference tapered MMI coupler has a slightly larger size tolerance compared with a conventional straight multimode interference coupler. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J

For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO), which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results.

A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation

Compared with the ordinary adaptive filter, the variable-length adaptive filter is more efficient (including smaller., lower power consumption and higher computational complexity output SNR) because of its tap-length learning algorithm, which is able to dynamically adapt its tap-length to the optimal tap-length that best balances the complexity and the performance of the adaptive filter. Among existing tap-length algorithms, the LMS-style Variable Tap-Length Algorithm (also called Fractional Tap-Length Algorithm or FT Algorithm) proposed by Y.Gong has the best performance because it has the fastest convergence rates and best stability. However, in some cases its performance deteriorates dramatically. To solve this problem, we first analyze the FT algorithm and point out some of its defects. Second, we propose a new FT algorithm called 'VSLMS' (Variable Step-size LMS) Style Tap-Length Learning Algorithm, which not only uses the concept of FT but also introduces a new concept of adaptive convergence slope. With this improvement the new FT algorithm has even faster convergence rates and better stability. Finally, we offer computer simulations to verify this improvement.

The structure and function of neurons with variable nonlinear transfer function

One novel neuron with variable nonlinear transfer function is firstly proposed, It could also be called as subsection transfer function neuron. With different transfer function components, by virtue of multi-thresholded, the variable transfer function neuron switch on among different nonlinear excitated state. And the comparison of output's transfer characteristics between it and single-thresholded neuron will be illustrated, with some practical application experiments on Bi-level logic operation, at last the simple comparison with conventional BP, RBF, and even DBF NN is taken to expect the development foreground on the variable neuron.. The novel nonlinear transfer function neuron could implement the random nonlinear mapping relationship between input layer and output layer, which could make variable transfer function neuron have one much wider applications on lots of reseach realm such as function approximation pattern recognition data compress and so on.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

High power AlGaInP laser diodes with zinc-diffused window mirror structure

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.

AlGaInP LED with surface structure of two-dimensional photonic crystal

Some progress in the research of GaN based LED with photonic crystal structure has been made recently. Based on the photonic crystal's photonic band gap effect and photon grating diffraction principle, the extraction efficiency of LED with photonic crystal can be improved. In this paper, the restriction on AlGaInP LED's extraction efficiency is analyzed, and the photonic crystal is introduced in to the AlGaInP LED to improve the extraction efficiency. The theoretical analyses and the experiment results show that the output luminous intensity of LED with photonic crystal is improved by 16%, which results from some effect of the GaN based LED with photonic crystal.

Numerical study on the velocity structure around tidal fronts in the Yellow Sea

The velocity components across tidal fronts are examined using the Blumberg and Mellor 3-D nonlinear numerical coastal circulation model incorporated with the Mellor and Yamada level 2.5 turbulent closure model based on the reasonable model output of the M-2 tide and density residual currents. In the numerical experiments, upwelling motion appears around all the fronts with different velocity structures, accounting for surface cold water around the fronts. The experiments also suggest that the location and formation of fronts are closely related to topography and tidal mixing, as is the velocity structure around the front.

Structure Sharing and Parallelization in a GB Parser

By utilizing structure sharing among its parse trees, a GB parser can increase its efficiency dramatically. Using a GB parser which has as its phrase structure recovery component an implementation of Tomita's algorithm (as described in [Tom86]), we investigate how a GB parser can preserve the structure sharing output by Tomita's algorithm. In this report, we discuss the implications of using Tomita's algorithm in GB parsing, and we give some details of the structuresharing parser currently under construction. We also discuss a method of parallelizing a GB parser, and relate it to the existing literature on parallel GB parsing. Our approach to preserving sharing within a shared-packed forest is applicable not only to GB parsing, but anytime we want to preserve structure sharing in a parse forest in the presence of features.