Anomalous optical phonons in Cs-0.9(NH4)(0.1)H2AsO4: a temperature-dependent Raman study

We determine the nature of coupled phonons in mixed crystal of Cs-0.9(NH4)(0.1)H2AsO4 using inelastic light scattering studies in the temperature range of 5 K to 300 K covering a spectral range of 60-1100 cm(-1). The phase transition in this system are marked by the splitting of phonon modes, appearance of new modes and anomalies in the frequency as well as linewidth of the phonon modes near transition temperature. In particular, we observed the splitting of symmetric (v(1)) and antisymmetric (v(3)) stretching vibrations associated with AsO4 tetrahedra below transition temperature (T-c(*) similar to 110 K) attributed to the lowering of site symmetry of AsO4 in orthorhombic phase below transition temperature. In addition, the step-up (hardening) and step-down (softening) of the AsO4 bending vibrations (v(4) (S9, S11) and v(2) (S6)) below transition temperature signals the rapid development of long range ferroelectric order and proton ordering. The lowest frequency phonon (S1) mode observed at similar to 92 cm(-1) shows anomalous blue shift (similar to 12 %) from 300 K to 5 K with no sharp transition near T-c(*) unlike other observed phonon modes signaling its potential coupling with the proton tunneling mode. (C) 2013 Author(s).

Temperature dependent magnetic, dielectric and Raman studies of partially disordered La2NiMnO6

We report a detailed magnetic, dielectric and Raman studies on partially disordered and biphasic double perovskite La2NiMnO6. DC and AC magnetic susceptibility measurements show two magnetic anomalies at T-C1 similar to 270 K and T-C2 similar to 240 K, which may indicate the ferromagnetic ordering of the monoclinic and rhombohedral phases, respectively. A broad peak at a lower temperature (T-sg similar to 70 K) is also observed indicating a spin-glass transition due to partial anti-site disorder of Ni2+ and Mn4+ ions. Unlike the pure monoclinic phase, the biphasic compound exhibits a broad but a clear dielectric anomaly around 270 K which is a signature of magneto-dielectric effect. Temperature-dependent Raman studies between the temperature range 12-300 K in a wide spectral range from 220 cm(-1) to 1530 cm(-1) reveal a strong renormalization of the first as well as second-order Raman modes associated with the (Ni/Mn)O-6 octahedra near T-C1 implying a strong spin-phonon coupling. In addition, an anomaly is seen in the vicinity of spin-glass transition temperature in the temperature dependence of the frequency of the anti-symmetric stretching vibration of the octahedra. (C) 2014 Elsevier Ltd. All rights reserved.

Temperature dependent electrical behaviour of Cu2SnS3 films

The temperature dependent electrical properties of the dropcasted Cu2SnS3 films have been measured in the temperature range 140 K to 317 K. The log I versus root V plot shows two regions. The region at lower bias is due to electrode limited Schottky emission and the higher bias region is due to bulk limited Poole Frenkel emission. The ideality factor is calculated from the ln I versus V plot for different temperatures fitted with the thermionic emission model and is found to vary from 6.05 eV to 12.23 eV. This large value is attributed to the presence of defects or amorphous layer at the Ag / Cu2SnS3 interface. From the Richardson's plot the Richardson's constant and the barrier height were calculated. Owing to the inhomogeneity in the barrier heights, the Richardson's constant and the barrier height were also calculated from the modified Richardson's plot. The I-V-T curves were also fitted using the thermionic field emission model. The barrier heights were found to be higher than those calculated using thermionic emission model. From the fit of the I-V-T curves to the field emission model, field emission was seen to dominate in the low temperature range of 140 K to 177 K. The temperature dependent current graphs show two regions of different mechanisms. The log I versus 1000/T plot gives activation energies E-a1 = 0.367095 - 0.257682 eV and E-a2 = 0.038416 - 0.042452 eV. The log ( I/T-2) versus 1000/T graph gives trap depths Phi(o1) = 0.314159 - 0.204752 eV and Phi(o2) = 0.007425- 0.011163 eV. With increasing voltage the activation energy E-a1 and the trap depth Phi(o1) decrease. From the ln (IT1/ 2) versus 1/T-1/ 4 graph, the low temperature region is due to variable range hopping mechanism and the high temperature region is due to thermionic emission. (C) 2014 Author(s).

Orientation, Size, and Temperature Dependent Ductile Brittle Transition in NiAl Nanowire under Tensile Loading - A Molecular Dynamics Study

In the present paper, thermo-mechanical response of B2-NiAl nanowire along the < 100 >, < 110 >, and < 111 > orientations has been studied using molecular dynamics simulations. Nanowire with cross-sectional dimensions of similar to 20x20 angstrom(2), similar to 25x25 angstrom(2), and similar to 30x30 angstrom(2) and temperature range of 10 K-900 K has been considered. A Combined effect of size, orientation, and temperature on the stress-strain behavior under uniaxial tensile loading has been presented. It has been observed that < 111 > oriented NiAl nanowire that is energetically most stable gives highest yield stress which further reduces with < 110 > and < 100 > orientations. A remarkable ductile brittle transition (DBT) with an increase in temperature has also been reported for all the orientations considered in the present study. The DBT observed for the nanowire has also been compared with the reported DBT of bulk B2-NiAl obtained from experiments. Alternate technique has also been proposed to increase the toughness of a given material especially at lower temperature regions, i.e. below DBT.

Improvement of electrical conductivity in Pb0.96-yMn0.04SnyTe alloys for high temperature thermoelectric applications

Lead-tin-telluride is a well-known thermoelectric material in the temperature range 350-750 K. Here, this alloy doped with manganese (Pb0.96-yMn0.04SnyTe) was prepared for different amounts of tin. X-ray diffraction showed a decrease of the lattice constant with increasing tin content, which indicated solid solution formation. Microstructural analysis showed a wide distribution of grain sizes from <1 mu m to 10 mm and the presence of a SnTe rich phase. All the transport properties were measured in the range of 300-720 K. The Seebeck coefficient showed that all the samples were p-type indicating holes as dominant carriers in the measurement range. The magnitude increased systematically on reduction of the Sn content due to possible decreasing hole concentration. Electrical conductivity showed the degenerate nature of the samples. Large values of the electrical conductivity could have possibly resulted from a large hole concentration due to a high Sn content and secondly, due to increased mobility by sp-d orbital interaction between the Pb1-ySnyTe sublattice and the Mn2+ ions. High thermal conductivity was observed due to higher electronic contribution, which decreased systematically with decreasing Sn content. The highest zT = 0.82 at 720 K was obtained for the alloy with the lowest Sn content (y = 0.56) due to the optimum doping level.

Studies of Adsorption Characteristics of Activated Carbons Down to 4.5 K for the Development of Cryosorption Pumps for Fusion Systems

Cryosorption pump is the only possible device to pump helium, hydrogen and its isotopes in fusion environment, such as high magnetic field and high plasma temperatures. Activated carbons are known to be the most suitable adsorbent in the development of cryosorption pumps. For this purpose, the data of adsorption characteristics of activated carbons in the temperature range 4.5 K to 77 K are needed, but are not available in the literature. For obtaining the above data, a commercial micro pore analyzer operating at 77 K has been integrated with a two stage GM cryocooler, which enables the cooling of the sample temperature down to 4.5 K. A heat switch mounted between the second stage cold head and the sample chamber helps to raise the sample chamber temperature to 77 K without affecting the performance of the cryocooler. The detailed description of this system is presented elsewhere. This paper presents the results of experimental studies of adsorption isotherms measured on different types of activated carbons in the form of granules, globules, flake knitted and non-woven types in the temperature range 4.5 K to 10 K using Helium gas as the adsorbate. The above results are analyzed to obtain the pore size distributions and surface areas of the activated carbons. The effect of adhesive used for bonding the activated carbons to the panels is also studied. These results will be useful to arrive at the right choice of activated carbon to be used for the development of cryosorption pumps.

High-Temperature Deformation Processing Map Approach for Obtaining the Desired Microstructure in a Multi-component (Ni-Ti-Cu-Fe) Alloy

An equiatomic NiTiCuFe multi-component alloy with simple body-centered cubic (bcc) and face-centered cubic solid-solution phases in the microstructure was processed by vacuum induction melting furnace under dynamic Ar atmosphere. High-temperature uniaxial compression experiments were conducted on it in the temperature range of 1073 K to 1303 K (800 degrees C to 1030 degrees C) and strain rate range of 10(-3) to 10(-1) s(-1). The data generated were analyzed with the aid of the dynamic materials model through which power dissipation efficiency and instability maps were generated so as to identify the governing deformation mechanisms that are operative in different temperature-strain rate regimes with the aid of complementary microstructural analysis of the deformed specimens. Results indicate that the stable domain for the high temperature deformation of the multi-component alloy occurs in the temperature range of 1173 K to 1303 K (900 degrees C to 1030 degrees C) and (epsilon) over dot range of 10(-3) to 10(-1.2) s(-1), and the deformation is unstable at T = 1073 K to 1153 K (800 degrees C to 880 degrees C) and (epsilon) over dot = 10(-3) to 10(-1.4) s(-1) as well as T = 1223 K to 1293 K (950 degrees C to 1020 degrees C) and (epsilon) over dot = 10(-1.4) to 10(-1) s(-1), with adiabatic shear banding, localized plastic flow, or cracking being the unstable mechanisms. A constitutive equation that describes the flow stress of NiTiCuFe multi-component alloy as a function of strain rate and deformation temperature was also determined. (C) The Minerals, Metals & Materials Society and ASM International 2015

Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO2/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO2/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights. (C) 2015 Author(s).

Temperature measurement of reflected shock wave by using chemical indicator

This report describes a new method for measuring the temperature of the gas behind the reflected shock wave in shock tube, corresponding to the reservoir temperature of a shock tunnel, based on the chemical reaction of small amount of CF4 premixed in the test gas. The final product C2F4 is used as the temperature indicator, which is sampled and detected by a gas chromatography in the experiment. The detected concentration of C2F4 is correlated to the temperature of the reflected shock wave with the initial pressure P-1 and test time tau as parameters in the temperature range 3 300 K < T < 5 600 K, pressure range 5 kPa < P1 <12 kPa and tau similar or equal to 0.4 ms.

The temperature dependence of effective thermal conductivity of open-celled steel alloy foams

The effective thermal conductivity of steel alloy FeCrAlY (Fe-20 wt.% Cr-5 wt.% Al-2 wt.% Y-20 wt.%) foams with a range of pore sizes and porosities was measured between 300 and 800 K, under both vacuum and atmospheric conditions. The results show that the effective thermal conductivity increases rapidly as temperature is increased, particularly in the higher temperature range (500-800 K) where the transport of heat is dominated by thermal radiation. The effective conductivity at temperature 800 K can be three times higher than that at room temperature (300 K). Results obtained under vacuum conditions reveal that the effective conductivity increases with increasing pore size or decreasing porosity. The contribution of natural convection to heat conduction was found to be significant, with the effective thermal conductivity at ambient pressure twice the value of vacuum condition. The results also show that natural convection in metal foams is strongly dependent upon porosity. © 2003 Elsevier B.V. All rights reserved.

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

The dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm(2)/s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm(2)/s, and 0.25 W/m K at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm(2)/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/m K at 440 K. Whether in the crystalline or amorphous state, Ag8In14Sb55Te23 are more thermally active than Ge2Sb2Te5, that is, the Ag8In14Sb55Te23 composites bear stronger thermal conduction and diffusion than the Ge2Sb2Te5 phase-change memory materials.

Silicon on insulator thermodiode with extremely wide working temperature range

This paper presents for the first time the performance of a silicon-on-insulator (SOI) p-n thermodiode, which can operate in an extremely wide temperature range of 200°C to 700°C while maintaining its linearity. The thermodiode is embedded in a thin dielectric membrane underneath a tungsten microheater, which allows the diode characterization at very high temperature (> 800°C). The effect of the junction area (Aj) on the thermodiode linearity, sensitivity and self-heating is experimentally and theoretically investigated. Results on the long-term diode stability at high temperature are also reported. © 2013 IEEE.

Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film

A stoichiometric Gd2O3-x thin film has been grown on a silicon (10 0) substrate with a low-energy dual ion-beam epitaxial technique. Gd2O3-x shares Gd2O3 structures although there are many oxygen deficiencies in the film. The photoluminescence (PL) measurements have been performed in a temperature range 5-300 K. The detailed characters of the peak position, the full-width at half-maximum (FWHM) and the peak intensity at different temperature were reported. An anomalous intensity behavior of the PL spectra has been observed, which is similar to that of some other materials such as porous silicon and silicon nanocrystals in silicon dioxide. Therefore, we suggest that the nanoclusters with the oxygen deficiencies contribute to the PL emission and employ the model of singlet-triplet exchange splitting of exciton to discuss the four peaks observed in the experiment. (C) 2003 Elsevier B.V. All rights reserved.

Temperature dependence of absorption edge in MOCVD grown GaN

We have studied the temperature dependence of absorption edge of GaN thin films grown on sapphire substrate by metal-organic chemical vapor deposition using optical absorption spectroscopy. A shift in absorption edge of about 55 meV has been observed in temperature range 273-343 K. We have proposed a theoretical model to find the energy gap from absorption coefficient using alpha = alpha(max) + (alpha(min) - alpha(max))/[1 + exp 2(E - E-g + KT)/KT]. Temperature dependence of band gap has also been studied by finding an appropriate theoretical fit to our data using E-g(T) = E-g(273 K) - (8.8 x 10(-4)T(2))/(483 + T) + 0.088 (Varshni empirical formula) and E-g(T) = E-g(273 K)-0.231447/[exp(362/T)-1] + 0.082 relations. It has been found that data can be fitted accurately after adding a factor similar to 0.08 in above equations. Debye temperature (483 K) and Einstein temperature (362 K) in the respective equations are found mutually in good agreement.