Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes


Autoria(s): Shetty, Arjun; Roul, Basanta; Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Vinoy, KJ; Krupanidhi, SB
Data(s)

2015

Resumo

This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO2 (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolution X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO2/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO2/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights. (C) 2015 Author(s).

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/52690/1/AIP_Adv_5-9_097103_2015.pdf

Shetty, Arjun and Roul, Basanta and Mukundan, Shruti and Mohan, Lokesh and Chandan, Greeshma and Vinoy, KJ and Krupanidhi, SB (2015) Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes. In: AIP ADVANCES, 5 (9).

Publicador

AMER INST PHYSICS

Relação

http://dx.doi.org/10.1063/1.4930199

http://eprints.iisc.ernet.in/52690/

Palavras-Chave #Materials Research Centre #Electrical Communication Engineering
Tipo

Journal Article

PeerReviewed