MSC-clustering and forward stepwise regression for virtual metrology in highly correlated input spaces

Increasingly semiconductor manufacturers are exploring opportunities for virtual metrology (VM) enabled process monitoring and control as a means of reducing non-value added metrology and achieving ever more demanding wafer fabrication tolerances. However, developing robust, reliable and interpretable VM models can be very challenging due to the highly correlated input space often associated with the underpinning data sets. A particularly pertinent example is etch rate prediction of plasma etch processes from multichannel optical emission spectroscopy data. This paper proposes a novel input-clustering based forward stepwise regression methodology for VM model building in such highly correlated input spaces. Max Separation Clustering (MSC) is employed as a pre-processing step to identify a reduced srt of well-conditioned, representative variables that can then be used as inputs to state-of-the-art model building techniques such as Forward Selection Regression (FSR), Ridge regression, LASSO and Forward Selection Ridge Regression (FCRR). The methodology is validated on a benchmark semiconductor plasma etch dataset and the results obtained are compared with those achieved when the state-of-art approaches are applied directly to the data without the MSC pre-processing step. Significant performance improvements are observed when MSC is combined with FSR (13%) and FSRR (8.5%), but not with Ridge Regression (-1%) or LASSO (-32%). The optimal VM results are obtained using the MSC-FSR and MSC-FSRR generated models. © 2012 IEEE.

Machine Learning for Predictive Maintenance: A Multiple Classifiers Approach

In this paper a multiple classifier machine learning methodology for Predictive Maintenance (PdM) is presented. PdM is a prominent strategy for dealing with maintenance issues given the increasing need to minimize downtime and associated costs. One of the challenges with PdM is generating so called ’health factors’ or quantitative indicators of the status of a system associated with a given maintenance issue, and determining their relationship to operating costs and failure risk. The proposed PdM methodology allows dynamical decision rules to be adopted for maintenance management and can be used with high-dimensional and censored data problems. This is achieved by training multiple classification modules with different prediction horizons to provide different performance trade-offs in terms of frequency of unexpected breaks and unexploited lifetime and then employing this information in an operating cost based maintenance decision system to minimise expected costs. The effectiveness of the methodology is demonstrated using a simulated example and a benchmark semiconductor manufacturing maintenance problem.

Predictive Maintenance for Improved Sustainability - An Ion Beam Etch Endpoint Detection System Use Case

In modern semiconductor manufacturing facilities maintenance strategies are increasingly shifting from traditional preventive maintenance (PM) based approaches to more efficient and sustainable predictive maintenance (PdM) approaches. This paper describes the development of such an online PdM module for the endpoint detection system of an ion beam etch tool in semiconductor manufacturing. The developed system uses optical emission spectroscopy (OES) data from the endpoint detection system to estimate the RUL of lenses, a key detector component that degrades over time. Simulation studies for historical data for the use case demonstrate the effectiveness of the proposed PdM solution and the potential for improved sustainability that it affords.

Root Cause Analysis by a Combined Sparse Classification and Monte Carlo Approach

Classification methods with embedded feature selection capability are very appealing for the analysis of complex processes since they allow the analysis of root causes even when the number of input variables is high. In this work, we investigate the performance of three techniques for classification within a Monte Carlo strategy with the aim of root cause analysis. We consider the naive bayes classifier and the logistic regression model with two different implementations for controlling model complexity, namely, a LASSO-like implementation with a L1 norm regularization and a fully Bayesian implementation of the logistic model, the so called relevance vector machine. Several challenges can arise when estimating such models mainly linked to the characteristics of the data: a large number of input variables, high correlation among subsets of variables, the situation where the number of variables is higher than the number of available data points and the case of unbalanced datasets. Using an ecological and a semiconductor manufacturing dataset, we show advantages and drawbacks of each method, highlighting the superior performance in term of classification accuracy for the relevance vector machine with respect to the other classifiers. Moreover, we show how the combination of the proposed techniques and the Monte Carlo approach can be used to get more robust insights into the problem under analysis when faced with challenging modelling conditions.

An Adaptive Machine Learning Decision System for Flexible Predictive Maintenance

Process monitoring and Predictive Maintenance (PdM) are gaining increasing attention in most manufacturing environments as a means of reducing maintenance related costs and downtime. This is especially true in industries that are data intensive such as semiconductor manufacturing. In this paper an adaptive PdM based flexible maintenance scheduling decision support system, which pays particular attention to associated opportunity and risk costs, is presented. The proposed system, which employs Machine Learning and regularized regression methods, exploits new information as it becomes available from newly processed components to refine remaining useful life estimates and associated costs and risks. The system has been validated on a real industrial dataset related to an Ion Beam Etching process for semiconductor manufacturing.

Extreme learning machines for virtual metrology and etch rate prediction

Virtual metrology (VM) aims to predict metrology values using sensor data from production equipment and physical metrology values of preceding samples. VM is a promising technology for the semiconductor manufacturing industry as it can reduce the frequency of in-line metrology operations and provide supportive information for other operations such as fault detection, predictive maintenance and run-to-run control. Methods with minimal user intervention are required to perform VM in a real-time industrial process. In this paper we propose extreme learning machines (ELM) as a competitive alternative to popular methods like lasso and ridge regression for developing VM models. In addition, we propose a new way to choose the hidden layer weights of ELMs that leads to an improvement in its prediction performance.

Supervised Aggregative Feature Extraction for Big Data Time Series Regression

In many applications, and especially those where batch processes are involved, a target scalar output of interest is often dependent on one or more time series of data. With the exponential growth in data logging in modern industries such time series are increasingly available for statistical modeling in soft sensing applications. In order to exploit time series data for predictive modelling, it is necessary to summarise the information they contain as a set of features to use as model regressors. Typically this is done in an unsupervised fashion using simple techniques such as computing statistical moments, principal components or wavelet decompositions, often leading to significant information loss and hence suboptimal predictive models. In this paper, a functional learning paradigm is exploited in a supervised fashion to derive continuous, smooth estimates of time series data (yielding aggregated local information), while simultaneously estimating a continuous shape function yielding optimal predictions. The proposed Supervised Aggregative Feature Extraction (SAFE) methodology can be extended to support nonlinear predictive models by embedding the functional learning framework in a Reproducing Kernel Hilbert Spaces setting. SAFE has a number of attractive features including closed form solution and the ability to explicitly incorporate first and second order derivative information. Using simulation studies and a practical semiconductor manufacturing case study we highlight the strengths of the new methodology with respect to standard unsupervised feature extraction approaches.

Estudo da qualidade de processos na fabricação de semicondutores

A indústria de semicondutores é um sector em permanente evolução tecnológica. A tendência de miniaturização e de otimização do espaço, a necessidade de produzir circuitos cada vez mais complexos, a tendência para o incremento do número de camadas em cada circuito integrado, são as condições necessárias para que a evolução tecnológica nesta área seja uma constante. Os processos ligados à produção de semicondutores estão também em permanente evolução, dada a pressão efetuada pelas necessidades acima expostas. Os equipamentos necessitam de uma crescente precisão, a qual tem que ser acompanhada de procedimentos rigorosos para que a qualidade atingida tenha sempre o patamar desejado. No entanto, a constante evolução nem sempre permite um adequado levantamento de todas as causas que estão na origem de alguns problemas detetados na fabricação de semicondutores. Este trabalho teve por objetivo efetuar um levantamento dos processos ligados ao fabrico de semicondutores a partir de uma pastilha de silício (wafer) previamente realizada, identificando para cada processo os possíveis defeitos introduzidos pelo mesmo, procurando inventariar as causas possíveis que possam estar na origem desse defeito e realizar procedimentos que permitam criar regras e procedimentos perfeitamente estabelecidos que permitam aprender com os erros e evitar que os mesmos problemas se possam vir a repetir em situações análogas em outros produtos de uma mesma família.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

Application of Signal Advance Technology to Electrophysiology

Medical instrumentation used in diagnosis and treatment relies on the accurate detection and processing of various physiological events and signals. While signal detection technology has improved greatly in recent years, there remain inherent delays in signal detection/ processing. These delays may have significant negative clinical consequences during various pathophysiological events. Reducing or eliminating such delays would increase the ability to provide successful early intervention in certain disorders thereby increasing the efficacy of treatment. In recent years, a physical phenomenon referred to as Negative Group Delay (NGD), demonstrated in simple electronic circuits, has been shown to temporally advance the detection of analog waveforms. Specifically, the output is temporally advanced relative to the input, as the time delay through the circuit is negative. The circuit output precedes the complete detection of the input signal. This process is referred to as signal advance (SA) detection. An SA circuit model incorporating NGD was designed, developed and tested. It imparts a constant temporal signal advance over a pre-specified spectral range in which the output is almost identical to the input signal (i.e., it has minimal distortion). Certain human patho-electrophysiological events are good candidates for the application of temporally-advanced waveform detection. SA technology has potential in early arrhythmia and epileptic seizure detection and intervention. Demonstrating reliable and consistent temporally advanced detection of electrophysiological waveforms may enable intervention with a pathological event (much) earlier than previously possible. SA detection could also be used to improve the performance of neural computer interfaces, neurotherapy applications, radiation therapy and imaging. In this study, the performance of a single-stage SA circuit model on a variety of constructed input signals, and human ECGs is investigated. The data obtained is used to quantify and characterize the temporal advances and circuit gain, as well as distortions in the output waveforms relative to their inputs. This project combines elements of physics, engineering, signal processing, statistics and electrophysiology. Its success has important consequences for the development of novel interventional methodologies in cardiology and neurophysiology as well as significant potential in a broader range of both biomedical and non-biomedical areas of application.