Effects of neuromuscular electrical stimulation, laser therapy and LED therapy on the masticatory system and the impact on sleep variables in cerebral palsy patients: a randomized, five arms clinical trial

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering

We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved.

Relationship between the optical gap and the optical-absorption tail breadth in amorphous GaAs

We study the relationship between the optical gap and the optical-absorption tail breadth for the case of amorphous gallium arsenide (a-GaAs). In particular, we analyze the optical-absorption spectra corresponding to some recently prepared a-GaAs samples. The optical gap and the optical-absorption tail breadth corresponding to each sample is determined. Plotting the optical gap as a function of the corresponding optical-absorption tail breadth, we note that a trend, similar to that found for the cases of the hydrogenated amorphous silicon and hydrogenated amorphous germanium, is also found for the case of a-GaAs. The impact of alloying on the optical-absorption spectrum associated with a-GaAs is also briefly examined. (C) 2004 American Institute of Physics.

Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering

The magnetic characteristics of Ga1-xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases. © 2012 Elsevier Masson SAS. All rights reserved.

Deposição e caracterização de filmes finos de GaAs e 'Al IND. 2''O IND. 3' para potencial utilizado em transistores

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Matrizes semicondutoras GaAs e Sn'X IND. 2' dopado com terras-raras Ce ou Eu: investigação do transporte elétrico

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Avaliação da técnica de evaporação resistiva para a deposição de filmes finos de GaAs e compostos de GaAs com óxidos e cloretos de Er ou Yb

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Ação de biomateriais e laser de baixa intensidade na reparação tecidual óssea: estudo histológico em ratos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Efeitos da radiação laser Arseneto de Gálio e Alumínio (780nm) no periodonto de sustentação de ratos diabéticos durante movimentação ortodôntica: analises radiográfica e histológica

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Cálculos de estrutura eletrônica de materiais mediante combinação linear de orbitais atômicos

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Efeitos da terapia fotodinâmica na expressão dos genes SAP5, LIP9 e PLB2 em Candida albicans

Pós-graduação em Biopatologia Bucal - ICT

Photo-Induced Conductivity of Heterojunction GaAs/Rare-Earth Doped SnO2

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Evaluation of gene expression SAP5, LIP9, and PLB2 of candida albicans biofilms after photodynamic inactivation

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigação das propriedades ópticas, morfológicas e elétricas da heterojunção SnO2: Ce3+/ GaAs

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

GaAs 904-nm laser irradiation improves myofiber mass recovery during regeneration of skeletal muscle previously damaged by crotoxin

This work investigated the effect of gallium arsenide (GaAs) irradiation (power: 5 mW; intensity: 77.14 mW/cm(2), spot: 0.07 cm(2)) on regenerating skeletal muscles damaged by crotoxin (CTX). Male C57Bl6 mice were divided into six groups (n = 5 each): control, treated only with laser at doses of 1.5 J or 3 J, CTX-injured and, CTX-injured and treated with laser at doses of 1.5 J or 3 J. The injured groups received a CTX injection into the tibialis anterior (TA) muscle. After 3 days, TA muscles were submitted to GaAs irradiation at doses of 1.5 or 3 J (once a day, during 5 days) and were killed on the eighth day. Muscle histological sections were stained with hematoxylin and eosin (H&E) in order to determine the myofiber cross-sectional area (CSA), the previously injured muscle area (PIMA) and the area density of connective tissue. The gene expression of MyoD and myogenin was detected by real-time PCR. GaAs laser at a dose of 3 J, but not 1.5 J, significantly increased the CSA of regenerating myofibers and reduced the PIMA and the area density of intramuscular connective tissue of CTX-injured muscles. MyoD gene expression increased in the injured group treated with GaAs laser at a dose of 1.5 J. The CTX-injured, 3-J GaAs laser-treated, and the CTX-injured and treated with 3-J laser groups showed an increase in myogenin gene expression when compared to the control group. Our results suggest that GaAs laser treatment at a dose of 3 J improves skeletal muscle regeneration by accelerating the recovery of myofiber mass.