Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering
| Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
|---|---|
| Data(s) |
20/05/2014
20/05/2014
01/08/2005
|
| Resumo |
We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved. |
| Formato |
329-333 |
| Identificador |
http://dx.doi.org/10.1016/j.nimb.2005.06.071 Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials and Atoms. Amsterdam: Elsevier B.V., v. 238, n. 1-4, p. 329-333, 2005. 0168-583X http://hdl.handle.net/11449/31673 10.1016/j.nimb.2005.06.071 WOS:000232390400069 |
| Idioma(s) |
eng |
| Publicador |
Elsevier B.V. |
| Relação |
Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials and Atoms |
| Direitos |
closedAccess |
| Palavras-Chave | #EXAFS #gallium arsenide #GaAs #sputtering #hydrogenation |
| Tipo |
info:eu-repo/semantics/article |
