Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE

Cubic GaN films were grown on GaAs(1 0 0) substrates by low-pressure metalorganic vapor-phase epitaxy at high temperature. We have found a nonlinear relation between GaN film thickness and growth timer and this nonlinearity becomes more obvious with increasing growth temperature. We assumed it was because of Ga diffusion through the GaN film, and developed a model which agrees well with the experimental results. These results raise questions concerning the role of Ga diffusion through the GaN film, which may affect the electrical and optical properties of the material. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition

Quality ZnO films were successfully grown on Si(100) substrate by low-pressure metal organic chemical vapor deposition method in temperature range of 300-500 degrees C using DEZn and N2O as precursor and oxygen source respectively. The crystal structure, optical properties and surface morphology of ZnO films were characterized by X-ray diffraction, optical refection and atomic force microscopy technologies. It was demonstrated that the crystalline structure and surface morphology of ZnO films strongly depend on the growth temperature.

A fixed arc length direct current plasma torch for reduced pressure deposition of thin films

Because of its high energy density direct current(dc)thermal plasmas are widely accepted as a processing medium which facilitates high processing rates high fluxes of radical species the potential for smaller jnstallations a wide choice of reactants and high quench rates[1].A broad range of industrial processing methods have been developed based on dc plasma technology. However,nonstationary features limited new applications of dc plasma in advanced processing, where reliability£¬reproducibility and precise controllability are required£. These challenges call for better understanding of the arc and jet behavior over a wide range of generating parameters and a comprehensive control of every aspect of lhe plasma processing.

An Investigation into the Optimum Thickness of Titanium Dioxide Thin Films Synthesized by Using Atmospheric Pressure Chemical Vapour Deposition for Use in Photocatalytic Water Oxidation

Twenty eight films of titanium dioxide of varying thickness were synthesised by using atmospheric pressure chemical vapour deposition (CVD) of titanium(IV) chloride and ethyl acetate onto glass and titanium substrates. Fixed reaction conditions at a substrate temperature of 660 degrees C were used for all depositions, with varying deposition times of 5-60 seconds used to control the thickness of the samples. A sacrificial electron acceptor system composed of alkaline sodium persulfate was used to determine the rate at which these films could photo-oxidise water in the presence of 365 nm light. The results of this work showed that the optimum thickness for CVD films on titanium substrates for the purposes of water oxidation was approximate to 200 nm, and that a platinum coating on the reverse of such samples leads to a five-fold increase in the observed rate of water oxidation.

Photocatalytically active gamma-WO3 films from the atmospheric pressure CVD of WOCl4 with ethyl acetate or ethanol

Communication: Coatings Of Yellow gamma-WO3 are deposited on glass by APCVD of WOCl4 and either ethanol or ethylacetate at 350-450degreesC. The yellow films show significant photoactivity for the destruction of stearic acid, and photoinduced superhydrophilicity. Preparation of blue reduced WO2.92 films from the same reaction at higher substrate temperatures of 500-600degreesC (Figure) is also found to be possible. These films show no photoactivity, but can be converted into the fully stoichiometric photoactive form simply by heating in air.

Atmospheric Pressure Chemical Vapour Deposition of thin Films of Nb2O5 on Glass

A novel route involving atmospheric pressure chemical vapour deposition (APCVD) is reported for coating Nb2O5 onto glass substrates via the reaction of NbCl5 and ethyl acetate at 400-660degreesC. Raman spectroscopy is shown to be a simple diagnostic tool for the analysis of these thin films. The contact angle of water on Nb2O5-coated glass drops on UV irradiation from 60degrees to 5-20degrees. XPS Analysis showed that the Nb:O ratio of the film was 1:2.5. Glancing angle X-ray diffraction showed that all films were crystalline, with only a single phase being observed; this has some preferred orientation in the (201) plane of Nb2O5. The niobium(V) oxide materials show minimal photocatalytic ability to degrade organic material.

Influence of selenization pressure on the growth of Cu2ZnSnSe4 films from stacked metallic layers

Cu2ZnSnSe4 (CZTSe) is a p-type semiconductor with a high absorption coefficient, 104 to 105 cm-1, and is being seen as a possible replacement for Cu(In,Ga)Se2 in thin film solar cells. Yet, there are some fundamental properties of CZTSe that are not well known, one of them is its band gap. In order to resolve its correct value it is necessary to improve the growth conditions to ensure that single phase crystalline thin films are obtained. One of the problems encountered when growing CZTSe is the loss of Sn through evaporation of SnSe. Stoichiometric films are then difficult to obtain and usually there are other phases present. One possible way to overcome this problem is to increase the pressure of growth of CZTSe. This can be done by introducing an atmosphere of an inert gas like Ar or N2. In this work we report the results of morphological, structural and optical studies of the properties of CZTSe thin films grown by selenization of DC magnetron sputtered metallic layers under different Ar pressures. The films are analysed by SEM/EDS, Raman scattering and XRD.

Study of colossal magnetoresistance and pressure effects in La2/3Ca1/3MnO2 thin films /

The main purpose of this thesis is to study properties of La2/3Cai/3Mn03, both polycrystalline ceramics and thin films. This material has striking related electrical and magnetic properties. Thin films show colossal negative magnetoresistance (CMR) near transition from an insulating to a metallic state accompanied closely by transition from a paramagnetic to a ferromagnetic state. The double exchange mechanism (DE) and the Jahn-Teller deformations play an important role in CMR effect. Applied pressure has a very similar effect as does an applied magnetic field, except, at low temperatures (Tpressure. In our study we performed x-ray diffraction analysis, resistivity and magnetization measurements, as well as measurements of resistivity under applied pressure. The origin of strong resistivity change at low temperatures can be explcdned by the intergranular spin-dependent scattering of DE electrons. Oxygen stoichiometry plays an important role in the magnitude and position of MR(T) maximum. The distortions of structure and Mn-O-Mn bonds in applied pressure axe discussed. The fabrication of La2/3Cai/3Mn03 thin films by pulsed laser deposition was successfully developed. The films grown on (100) SrTiOs substrate are c-axis oriented and exhibit negative magnetoresistance Ap/p(H) of over 400% at 245°C and 4200% at 90 K.

Systematic studies of the effect of pressure on magnetic and electronic properties of La2/3Ca1/3MnO3 thin films with various thicknesses /

Interest in mixed-valent perovskite manganese oxides of La\-xAxMnO^ (v4-divalent alkaline earth Ca, Sr or Ba), whose unusual properties were discovered nearly a half century ago, has recently been revived. The discovery of the colossal magnetoresistance and pressure effects introduced new questions concerning the complex interplay between lattice structure, magnetism and transport in doped perovskite manganites. In this study, we report our experimental investigations of pressure and magnetic field dependencies of La-i/sCai/sMnOs (LCMO) epitaxial films with various thickness on SrTiO$ substrate. An analysis of film thickness dependency of the resistivity of LCMO epitaxial films under pressure and magnetic field has been performed by taking into account substrate contributions. This verifies the correlation of lattice distortion with magnetic and transport properties. Strong dependencies of Mn — O — Mn bond bending and Mn — O bond stretching with pressure as well as Mn spin alignment with magnetic field, and the lattice distortion induced by the substrate are discussed.

Pressure-induced electrical and structural anomalies in Pb(1-x)Ca(x)TiO(3) thin films grown at various oxygen pressures by chemical solution route

Lead calcium titanate (Pb(1-x)Ca(x)TiO(3) or PCT) thin films have been thermally treated under different oxygen pressures, 10, 40 and 80 bar, by using the so-called chemical solution deposition method. The structural, morphological, dielectric and ferroelectric properties were characterized by x-ray diffraction, FT-infrared and Raman spectroscopy, atomic force microscopy and polarization-electric-field hysteresis loop measurements. By annealing at a controlled pressure of around 10 and 40 bar, well-crystallized PCT thin films were successfully prepared. For the sample submitted to 80 bar, the x-ray diffraction, Fourier transformed-infrared and Raman data indicated deviation from the tetragonal symmetry. The most interesting feature in the Raman spectra is the occurrence of intense vibrational modes at frequencies of around 747 and 820 cm(-1), whose presence depends strongly on the amount of the pyrochlore phase. In addition, the Raman spectrum indicates the presence of symmetry-breaking disorder, which would be expected for an amorphous (disorder) and mixed pyrochlore-perovskite phase. During the high-pressure annealing process, the crystallinity and the grain size of the annealed film decreased. This process effectively suppressed both the dielectric and ferroelectric behaviour. Ferroelectric hysteresis loop measurements performed on these PCT films exhibited a clear decrease in the remanent polarization with increasing oxygen pressure.

Pressure-induced electrical and structural anomalies in Pb1-xCaxTiO3 thin films grown at various oxygen pressures by chemical solution route

Lead calcium titanate (Pb1-xCaxTiO3 or PCT) thin films have been thermally treated under different oxygen pressures, 10, 40 and 80 bar, by using the so-called chemical solution deposition method. The structural, morphological, dielectric and ferroelectric properties were characterized by x-ray diffraction, FT-infrared and Raman spectroscopy, atomic force microscopy and polarization-electric-field hysteresis loop measurements. By annealing at a controlled pressure of around 10 and 40 bar, well-crystallized PCT thin films were successfully prepared. For the sample submitted to 80 bar, the x-ray diffraction, Fourier transformed-infrared and Raman data indicated deviation from the tetragonal symmetry. The most interesting feature in the Raman spectra is the occurrence of intense vibrational modes at frequencies of around 747 and 820 cm(-1), whose presence depends strongly on the amount of the pyrochlore phase. In addition, the Raman spectrum indicates the presence of symmetry-breaking disorder, which would be expected for an amorphous (disorder) and mixed pyrochlore-perovskite phase. During the high-pressure annealing process, the crystallinity and the grain size of the annealed film decreased. This process effectively suppressed both the dielectric and ferroelectric behaviour. Ferroelectric hysteresis loop measurements performed on these PCT films exhibited a clear decrease in the remanent polarization with increasing oxygen pressure.

Effect of temperature on glass-ceramic films prepared by impregnation of commercial float glass surfaces with oxide powders under pressure

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Nanomechanical properties of glass-ceramic films obtained by pressure impregnation of oxide powders on commercial float glass surfaces

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)