低温生长GaAs在Nd:YVO4激光器中调Q特性的研究

采用一种新型的被动调Q饱和吸收体,低温生长GaAs薄膜,实现了半导体抽运Nd:YVO4激光器的调Q运转.研究了激光器的调Q特性,调Q抽运阈值为2W.在抽运功率9.2 W时,获得的最短脉冲半峰全宽为15 ns,最大单脉冲能量为4.84 μJ,最高峰值功率为330 W,最大平均输出功率为1.16 W;脉冲重复频率在220 kHz到360 kHz之间.

880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on SESAM

We report on an 880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on a semiconductor saturable absorber mirror (SESAM) for the first time. When the incident pump power was 16 W, 4.76 W average output power of continuous-wave mode-locked laser with an optical-to-optical conversion efficiency of 30% was achieved. The repetition rate of mode-locked pulse was 80 MHz with 25 ps pulse width. The maximum pulse energy and peak power were 60 nJ and 2.4 kW, respectively.

Surface modification of Ti dental implants by Nd: YVO4 laser irradiation

Surface modifications have been applied in endosteal bone devices in order to improve the osseointegration through direct contact between neoformed bone and the implant without an intervening soft tissue layer. Surface characteristics of titanium implants have been modified by addictive methods, such as metallic titanium, titanium oxide and hydroxyapatite powder plasma spray, as well as by subtractive methods, such as acid etching, acid etching associated with sandblasting by either AlO2 or TiO2, and recently by laser ablation. Surface modification for dental and medical implants can be obtained by using laser irradiation technique where its parameters like repetition rate, pulse energy, scanning speed and fluency must be taken into accounting to the appropriate surface topography. Surfaces of commercially pure Ti (cpTi) were modified by laser Nd:YVO4 in nine different parameters configurations, all under normal atmosphere. The samples were characterized by SEM and XRD refined by Rietveld method. The crystalline phases alpha Ti, beta Ti, Ti6O, Ti3O and TiO were formed by the melting and fast cooling processes during irradiation. The resulting phases on the irradiated surface were correlated with the laser beam parameters: the aim of the present work was to control titanium oxides formations in order to improve implants osseointegration by using a laser irradiation technique which is of great importance to biomaterial devices due to being a clean and reproducible process. (c) 2007 Elsevier B.V. All rights reserved.

Bioactive coating on titanium implants modified by Nd:YVO4 laser

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

激光二极管端面抽运Nd∶YVO4固体激光器热致光束畸变非对称的平衡

由于a轴切割Nd∶YVO4晶体的非对称性,使得激光二极管(LD)端面抽运Nd∶YVO4固体激光器不同于Nd∶YAG激光器,输出的激光经常产生非对称结果。用有限元法分析激光二极管端面抽运a轴切割Nd∶YVO4固体激光器的晶体热效应,包括温度分布、内部应力和产生的形变。分析结果表明端面抽运a轴切割Nd∶YVO4晶体产生了椭球热透镜效应。从结构方面和抽运方面提出了热透镜非对称性的平衡方法,实验验证了方法的可行性。

部分端面抽运混合腔Nd∶YVO_4板条激光器实验研究

为了获得大功率高光束质量的激光输出,利用自制的5bar激光二极管阵列堆作为抽运源,抽运光经波导整形系统整形后入射至晶体,采用柱面镜混合腔结构,对部分端面抽运的混合腔Nd∶YVO4板条激光器进行了实验研究。在最高抽运功率134W时,得到了38W的连续激光输出,斜效率44%,测得的两个方向的M2因子为1.56和1.78。实验结果表明,该激光器具有极佳的热效应,能够在高功率运转时保持高光束质量的激光输出,输入-输出功率曲线没有出现平顶或弯曲的迹象,该激光器仍有提升潜力,本结果有助于进一步提升该激光器的性能,实现更高功率的高光束质量激光输出。

高重复率窄脉宽Nd∶YVO_4板条激光器

部分端面抽运的混合腔板条激光器是一种新型的全固态激光器,采用这种结构,实现了高重复率调Q运转。在脉冲抽运情况下,1kHz运转时,得到脉宽4.6ns,单脉冲能量4.5mJ的激光输出。在连续抽运调Q输出情况下,5kHz高重复率运转时,获得了脉宽6ns,单脉冲能量3.1mJ的脉冲序列输出,平均功率超过15W;当重复率高达25kHz时,得到脉宽9.5ns,单脉冲能量1.2mJ的激光输出,平均功率达30W。实验结果表明,输出水平还有很大的提升空间。

Experimental study on a diode-pumped passively mode-locking Nd : GdVO4/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO4 laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO4 laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.

Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.

Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser

A passively Q-switched and mode-locked diode-pumped Nd:GdVO4 laser was demonstrated using a low-temperature-grown GaAs wafer (LT-GaAs) as an intracavity saturable absorber. The maximal Q-switched mode-locked average output power was 750 mW with the Q-switched envelop having a repetition rate of 167 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 790 MHz.

Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber

Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal organic vapor phase epitaxy on a semi-insular GaAs substrate. With such an absorber as well as an output coupler we obtain Q-switched mode-locked (QML) 1064 nm Nd:GdVO4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. The repetition rate of the Q-switched envelope increased from 100 to 660 kHz as the pump power increased from 2.28 to 7.29 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of similar to 1.36 GHz. A maximum average output power of 953 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally. (C) 2005 Elsevier B.V. All rights reserved.