985 resultados para Ge-Si alloys


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We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.

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Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

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Experiments were conducted to investigate the influence of thermal parameters on the columnar to equiaxed transition during the horizontal unsteady-state directional solidification of Al-Si alloys. The parameters analyzed include the heat transfer coefficients, growth rates, cooling rates, temperature gradients and composition. A combined theoretical and experimental approach is developed to determine the solidification thermal variables considered. The increasing solute content in Al-Si alloys was not found to affect significantly the experimental position of the CET which occurred for cooling rates in the range between 0.35 and 0.64 K/s for any of three alloy compositions examined. A comparative analysis between the results of this work and those from the literature proposed to analyze the CET during upward vertical solidification of Al-Si alloys is reported and the results have shown that the end of the columnar region during horizontal directional solidification is abbreviated as a result of about six times higher thermal gradient than that verified during upward unidirectional solidification of alloys investigated.

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As a result of both culture and sediment core studies, the ratio of germanium (Ge) to silicon (Si) in diatom shells has been proposed as a proxy for monitoring whole-ocean changes in seawater Ge/Si, a ratio affected by changes in continental weathering. However, because of the difficulties of extracting and cleaning diatom frustules from deep-sea sediments, only samples from highly pure diatom oozes in the Antarctic region have been previously analyzed. Here we present data on diatom Ge/Si ratios, (Ge/Si)opal, for the time interval between 3.1 and 1.9 Ma from a mid-latitude, coastal upwelling area where significant terrigenous sediment input complicated the sample processing and analyses. In general, our (Ge/Si)opal values show the same decreasing trend after 2.6 Ma than previously measured in Antarctic sediments (Shemesh et al., 1989. Paleoceanography 4, 221-231), but with a noisier background that may reflect the local imprint of proximal continental input superimposed upon global changes in the ocean reservoir. The time of initiation of large-scale North Hemisphere glaciation at ~2.6 Ma is characterized by a declining pattern of diatom Ge/Si ratios, which could have resulted from a global increase in the input of riverine Si due to enhanced silica weathering and/or equatorward (northward) intrusions of subantarctic waters enriched in silica. High (Ge/Si)opal ratios are associated with high opal contents from the same sediment samples and with warm climate as indicated by depleted benthic foraminiferal d18O values from the North and Equatorial Atlantic. Cold periods signified by enriched benthic d18O values, on the contrary, are associated with lower (Ge/Si)opal ratios. We interpret diatom Ge/Si values to reflect the prevailing weathering state on the continents, with greater chemical weathering during warm and wet periods of the Pliocene and less during cooler and drier intervals.

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Nineteen chert samples from a continuous core of the DSDP (Leg 17, Hole 167) were analysed for Ge; in addition we analysed five samples from other cores. The ages range between Late Jurassic, and Late Eocene. The concentration of Ge changes with age from 0.87 ppm in the oldest samples to 0.23 ppm in the youngest (equivalent to a Ge/Si decrease from 0.00000072 to 0.00000019). The decrease in Ge/Si is well correlated with the 87Sr/86Sr ratio in sea water of the relevant age. The interpretation of this trend may reflect: (a) different levels of Ge/Si in sea water as a result of a different ratio between hydrothermal and riverine input, (b) a diagenetic trend in siliceous sediments, (c) recording (by radiolaria) a transition between a radiolaria dominated ocean (with relatively high Ge/Si ratios in sea water) and diatom domination or (d) a combination of the above.

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The knowledge of thermophysical properties of liquid Co-Si alloys is a key requirement for manufacturing of composite materials by infiltration method. Despite this need, the experimental and predicted property data of the Co-Si system are scarce and often inconsistent between the various sources. In the present work the mixing behaviour of Co-Si melts has been analysed through the study of the concentration dependence of various thermodynamic, surface (surface tension and surface composition) and structural properties (concentration fluctuations in the long-wavelength limit and chemical short-range order parameter) in the framework of the Compound Formation Model (CFM) and Quasi Chemical Approximation for regular solutions (QCA). In addition, the surface tension of the Co22·5Si77.5 (in at%) eutectic alloy, that is proposed to be used as the infiltrant, has been measured by the pendant drop method at temperatures ranging from 1593 to 1773 K. The results obtained were discussed with respect to both, temperature and concentration, and subsequently compared with the model predictions and literature data.