Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

The resistivity of hydrothermally grown ZnO single crystals increased from similar to 10(3) Omega cm to similar to 10(6) Omega cm after 1.8 MeV electron irradiation with a fluence of similar to 10(16) cm(-2), and to similar to 10(9) Omega cm as the fluence increased to similar to 10(18) cm(-2). Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10(18) cm(-2), the normalized TSC signal increased by a factor of similar to 100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 degrees C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

Spin dynamics of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system

We report on time-resolved Kerr rotation measurements of spin coherence of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system in a GaAs/Al0.35Ga0.65As heterostructure. While the transverse spin lifetime (T-2(*)) of electrons decreases monotonically with increasing magnetic field, it has a nonmonotonic dependence on the temperature and reaches a peak value of 596 ps at 36 K, indicating the effect of intersubband electron-electron scattering on the electron-spin relaxation.

Effect of electron-hole spatial correlation on spin relaxation dynamics in InAs submonolayer

Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the unique electron spin behavior in an InAs submonolayer sandwiched in a GaAs matrix, which shows very different spin characteristics under resonant and non-resonant excitations. While a very long spin relaxation lifetime of a few nanoseconds at low temperature is observed under non-resonant excitation, it decreases dramatically under resonant excitation. These interesting results are attributed to the difference in electron-hole interactions caused by non-geminate or geminate capture of photo-generated electron-hole pairs in the two excitation cases, and provide a direct verification of the electron-hole spatial correlation effect on electron spin relaxation. (c) 2007 Elsevier Ltd. All rights reserved.

Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy

In this paper we present the results of coincidence Doppler broadening (CDB) measurements and positron lifetime spectroscopy (PLS) on the semiconductor material GaSb. Gallium vacancy with positron lifetime of about 283 ps (V-Ga, (283 ps)) was identified in as-grown sample by CDB technique and PAS technique. For electron irradiated samples with dosages of 10(17) cm(-2) and 10(18) cm(-2), the PAS showed almost the same defectrelated positron lifetime of about 285 ps. CDB experiments indicated that defects in irradiated samples were related to Ga vacancies. (c) 2006 Published by Elsevier B.V.

Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure

We obtained the high mobility Of mu(2K) = 1.78 x 10(6) cm(2)/V . s in Si-doped GaAs/AlGaAs two-dimensional electron gas (2DEG) structures. After the sample was illuminated by a light-emitting diode in magnetic fields up to 6 T at T = 2K, we did observe the persistent photoconductivity effect and the electron density increased obviously. The electronic properties of 2DEG have been studied by Quantum-Hall-effect and Shubnikov-de Haas (SdH) oscillation measurements. We found that the electron concentrations of two subbands increase simultaneity with the increasing total electron concentration, and the electron mobility also increases obviously after being illuminated. At the same time, we also found that the electronic quantum lifetime becomes shorter, and a theoretical explunation is given through the widths of integral quantum Hall plateaus.

Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.

WELL WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN NARROW GAAS/GAALAS QUANTUM-WELLS

We have studied the radiative excitonic lifetime as a function of the well width in GaAs/GaAlAs quantum wells. An increasing lifetime with decreasing well width has been observed in very narrow and high quality GaAs/GaAlAs quantum wells, and attributed to the reduced overlap of the electron and hole wave functions and the increase of the exciton effective volume. This is the first observation of its kind in the conventional GaAs/GaAlAs quantum wells.

Commissioning of electron cooling in CSRe

The 400 MeV/u C-12(6+) ion beam was successfully cooled by the intensive electron beam near 1 A in CSRe. The momentum cooling time was estimated near 15 s. The cooling force was measured in the cases of different electron beam profiles, and the different angles between the ion beam and electron beam. The lifetime of the ion beam in CSRe was over 80 h. The dispersion in the cooling section was confirmed as positive close to zero. The beam sizes before cooling and after cooling were measured by the moving screen. The beam diameter after cooling was about 1 mm. The bunch length was measured with the help of the signals from the beam position monitor. The diffusion was studied in the absence of the electron beam.

Double-ceramic-layer thermal barrier coatings of La2Zr2O7/YSZ deposited by electron beam-physical vapor deposition

Double-ceramic-layer(DCL) thermal barrier coatings (TBCs) of La2Zr2O7 (LZ) and yttria stabilized zirconia (YSZ) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, surface and cross-sectional morphologies and cyclic oxidation behavior of the DCL coating were studied. Both the X-ray diffraction (XRD) and thermogravimetric-differential thermal analysis (TG-DTA) prove that LZ and YSZ have good chemical applicability to form a DCL coating. The thermal cycling test at 1373 K in an air furnace indicates the DCL coating has a much longer lifetime than the single layer LZ coating. and even longer than that of the single layer YSZ coating. The failure of the DCL coating is a result of both the bond coat oxidation and the thermal strain between bond coat and ceramic layer generated by the thermal expansion mismatch.

Organic photovoltaic cells using hexadecafluorophthalocyaninatocopper (F16CuPc) as electron acceptor material

We fabricated organic photovoltaic cells by using hexadecafluorophthalocyaninatocopper (F16CuPc) as electron acceptor material and para-sexiphenyl (p-6P) as electron donor material. F16CuPc has wide absorption spectrum from 550 nm to 850 nm, which covers the maximum of solar photo flux. The measurement of their external quantum efficiency (EQE) demonstrated that the photocurrent comes from the excitons created in F16CuPc, which were separated into free electrons and holes at heterojunction interface of p-6P and F16CuPc. Moreover, F(16)FuPc with excellent air-stability improved the environmental stability of photovoltaic cells, and the unencapsulated cells exhibited the shelf lifetime of exceeding a week.

Electron attachment to SF(6) and lifetimes of SF(6)(-) negative ions

We study the process of low-energy electron capture by the SF(6) molecule. Our approach is based on the model of Gauyacq and Herzenberg [J. P. Gauyacq and A. Herzenberg, J. Phys. B 17, 1155 (1984)] in which the electron motion is coupled to the fully symmetric vibrational mode through a weakly bound or virtual s state. By tuning the two free parameters of the model, we achieve an accurate description of the measured electron attachment cross section and good agreement with vibrational excitation cross sections of the fully symmetric mode. An extension of the model provides a limit on the characteristic time of intramolecular vibrational relaxation in highly excited SF(6)(-). By evaluating the total vibrational spectrum density of SF(6)(-), we estimate the widths of the vibrational Feshbach resonances of the long-lived negative ion. We also analyze the possible distribution of the widths and its effect on the lifetime measurements, and investigate nonexponential decay features in metastable SF(6)(-).

Doxorubicin In Vivo Rapidly Alters Expression and Translation of Myocardial Electron Transport Chain Genes, Leads to ATP Loss and Caspase 3 Activation

Background: Doxorubicin is one of the most effective anti-cancer drugs but its use is limited by cumulative cardiotoxicity that restricts lifetime dose. Redox damage is one of the most accepted mechanisms of toxicity, but not fully substantiated. Moreover doxorubicin is not an efficient redox cycling compound due to its low redox potential. Here we used genomic and chemical systems approaches in vivo to investigate the mechanisms of doxorubicin cardiotoxicity, and specifically test the hypothesis of redox cycling mediated cardiotoxicity.

Electron-induced hydrogen loss in uracil in a water cluster environment

Low-energy electron-impact hydrogen loss due to dissociative electron attachment (DEA) to the uracil and thymine molecules in a water cluster environment is investigated theoretically. Only the A'-resonance contribution, describing the near-threshold behavior of DEA, is incorporated. Calculations are based on the nonlocal complex potential theory and the multiple scattering theory, and are performed for a model target with basic properties of uracil and thymine, surrounded by five water molecules. The DEA cross section is strongly enhanced when the attaching molecule is embedded in a water cluster. This growth is due to two effects: the increase of the resonance lifetime and the negative shift in the resonance position due to interaction of the intermediate negative ion with the surrounding water molecules. A similar effect was earlier found in DEA to chlorofluorocarbons. 

First results of experimental and theoretical investigations on sextet states of doubly-excited five-electron ions

In continuation of our previous work on doubly-excited ions with three and four electrons we present the first results on optical transitions in the term system of doubly-excited ions with five electrons. Transitions between such sextet states were identified in beam-foil spectra of the ions nitrogen, oxygen and fluorine. Assignments were first established by comparison with Multi-Configuration Dirac-Fock calculations. Later assignments were aided by Multi-Configuration Hartree-Fock calculations (see the contribution by G. Miecznik et al. in this issue). Decay curves were recorded for all six candidate lines. The lifetime results are compared to theoretical values which confirm most of the assignments qualitatively.