Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy
| Data(s) |
2007
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| Resumo |
In this paper we present the results of coincidence Doppler broadening (CDB) measurements and positron lifetime spectroscopy (PLS) on the semiconductor material GaSb. Gallium vacancy with positron lifetime of about 283 ps (V-Ga, (283 ps)) was identified in as-grown sample by CDB technique and PAS technique. For electron irradiated samples with dosages of 10(17) cm(-2) and 10(18) cm(-2), the PAS showed almost the same defectrelated positron lifetime of about 285 ps. CDB experiments indicated that defects in irradiated samples were related to Ga vacancies. (c) 2006 Published by Elsevier B.V. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Shao, YD (Shao, Y. D.); Wang, Z (Wang, Z.); Dai, YQ (Dai, Y. Q.); Zhao, YW (Zhao, Y. W.); Tang, FY (Tang, F. Y.) .Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy ,MATERIALS LETTERS,FEB 2007,61 (4-5):1187-1189 |
| Palavras-Chave | #半导体材料 #GaSb |
| Tipo |
期刊论文 |
