WELL WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN NARROW GAAS/GAALAS QUANTUM-WELLS


Autoria(s): XU ZY; JIN SR; LUO CP; XU JZ
Data(s)

1993

Resumo

We have studied the radiative excitonic lifetime as a function of the well width in GaAs/GaAlAs quantum wells. An increasing lifetime with decreasing well width has been observed in very narrow and high quality GaAs/GaAlAs quantum wells, and attributed to the reduced overlap of the electron and hole wave functions and the increase of the exciton effective volume. This is the first observation of its kind in the conventional GaAs/GaAlAs quantum wells.

Identificador

http://ir.semi.ac.cn/handle/172111/14057

http://www.irgrid.ac.cn/handle/1471x/101063

Idioma(s)

英语

Fonte

XU ZY; JIN SR; LUO CP; XU JZ.WELL WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN NARROW GAAS/GAALAS QUANTUM-WELLS,SOLID STATE COMMUNICATIONS ,1993,87(9):797-800

Palavras-Chave #光电子学 #DYNAMICS
Tipo

期刊论文