Influence of electron irradiation on hydrothermally grown zinc oxide single crystals
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2008
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Resumo |
The resistivity of hydrothermally grown ZnO single crystals increased from similar to 10(3) Omega cm to similar to 10(6) Omega cm after 1.8 MeV electron irradiation with a fluence of similar to 10(16) cm(-2), and to similar to 10(9) Omega cm as the fluence increased to similar to 10(18) cm(-2). Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10(18) cm(-2), the normalized TSC signal increased by a factor of similar to 100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 degrees C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed. RGC CERG 7032/04P Germany/Hong Kong Research Scheme GHK026/07 Small Project Fund, HKU 200707176013 This work was supported by the RGC CERG (no.7032/04P), the Germany/Hong Kong Research Scheme (no. GHK026/07) and the Small Project Fund, HKU (no. 200707176013). |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Lu, LW ; So, CK ; Zhu, CY ; Gu, QL ; Li, CJ ; Fung, S ; Brauer, G ; Anwand, W ; Skorupa, W ; Ling, CC .Influence of electron irradiation on hydrothermally grown zinc oxide single crystals ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2008 ,23(9): Art. No. 095028 |
Palavras-Chave | #半导体材料 #SCHOTTKY CONTACTS |
Tipo |
期刊论文 |