Graphene saturable absorbers for VECSELs

We report mode-locking of an optically pumped VECSEL using a graphene-based saturable absorber mirror (GSAM). Self-starting and stable modelocked operation is demonstrated with 473 fs pulses at 1.5 GHz repetition rate and 949 nm center wavelength. Wavelength tuning is achieved over a 46 nm bandwidth. We discuss the mirror design, the fabrication of the GSAMs, and give an outlook on further optimization of the design, including dielectric top coatings to protect the graphene and to increase the flexibility in the design. © 2014 SPIE.

Experimental study of a pulsed ytterbium-doped fibre laser with fast and slow saturable absorbers in a linear cavity

We present a linear-cavity stretched-pulse fibre laser with mode locking by a nonlinear polarization rotation and by semiconductor saturable-absorber mirrors. A Q-switched mode-locking cw train and a mode-locking pulse train are obtained in the experiment. We investigate the effects of the equivalent fast saturable absorber and the slow saturable absorbers in experiment. It is found that neither the nonlinear polarization evolution effect nor a semiconductor saturable absorber mirror is enough to produce the stable cw mode-locking pulses in this experiment. A nonlinear polarization evolution effect controls the cavity loss to literally carve the pulses; semiconductor saturable absorber mirrors provide the self-restarting and maintain the stability of the mode-locking operation.

Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser

We have demonstrated passive mode-locking in a diode-end-pumped Nd:YVO4 laser using two kinds of semiconductor absorbers whose relaxation region comes from In0.25Ga0.75As grown at low temperature (LT) and GaAs/air interface respectively Mode-locking, using absorbers of the GaAs/air interface relaxation region, has the characteristics of less Q-switching tendency and higher average output power than that using absorbers of LT In0.25Ga0.75As relaxation region, but is not as stable as the latter.

Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy

High-quality and high-resistivity GaN films were grown on (0001) sapphire face by metal-organic vapour phase epitaxy. To measure the surface acoustic wave properties accurately, we deposited metallized interdigital transducers on the GaN surface. The acoustic surface wave velocity and electromechanical coupling coefficient were measured, respectively, to be 5667 m/s and 1.9% by the pulse method.

Ionically-Mediated Electromechanical Hysteresis in Transition Metal Oxides

Nanoscale electromechanical activity, remanent polarization states, and hysteresis loops in paraelectric TiO2 and SrTiO3 thin films are observed using scanning probe microscopy. The coupling between the ionic dynamics and incipient ferroelectricity in these materials is analyzed using extended Landau-Ginzburg-Devonshire (LGD) theory. The possible origins of electromechanical coupling including ionic dynamics, surface-charge induced electrostriction, and ionically induced ferroelectricity are identified. For the latter, the ionic contribution can change the sign of first order LGD expansion coefficient, rendering material effectively ferroelectric. The lifetime of these ionically induced ferroelectric states is then controlled by the transport time of the mobile ionic species and well above that of polarization switching. These studies provide possible explanation for ferroelectric-like behavior in centrosymmetric transition metal oxides.

Nonlinear phenomena in multiferroic nanocapacitors:joule heating and electromechanical effects

We demonstrate an approach for probing nonlinear electromechanical responses in BiFeO(3) thin film nanocapacitors using half-harmonic band excitation piezoresponse force microscopy (PFM). Nonlinear PFM images of nanocapacitor arrays show clearly visible clusters of capacitors associated with variations of local leakage current through the BiFeO(3) film. Strain spectroscopy measurements and finite element modeling point to significance of the Joule heating and show that the thermal effects caused by the Joule heating can provide nontrivial contributions to the nonlinear electromechanical responses in ferroic nanostructures. This approach can be further extended to unambiguous mapping of electrostatic signal contributions to PFM and related techniques.

Inkjet printing of resistively loaded FSS for microwave absorbers

Inkjet printing is proposed as a means to create the resistively loaded elements of a frequency selective surface (FSS) which suppresses radar backscatter when placed above a metal ground plane. Spectral transmission and reflection measurements from 9 to 18 GHz show that the dot density of the printed features and the volume ratio of an aqueous vehicle and nano-silver (Ag) ink mixture can be selected to obtain surface resistances in the range 1.2-200 Ω/sq.

Electromechanical properties of engineered lead free potassium sodium niobate based materials

K0.5Na0.5NbO3 (KNN), is the most promising lead free material for substituting lead zirconate titanate (PZT) which is still the market leader used for sensors and actuators. To make KNN a real competitor, it is necessary to understand and to improve its properties. This goal is pursued in the present work via different approaches aiming to study KNN intrinsic properties and then to identify appropriate strategies like doping and texturing for designing better KNN materials for an intended application. Hence, polycrystalline KNN ceramics (undoped, non-stoichiometric; NST and doped), high-quality KNN single crystals and textured KNN based ceramics were successfully synthesized and characterized in this work. Polycrystalline undoped, non-stoichiometric (NST) and Mn doped KNN ceramics were prepared by conventional ceramic processing. Structure, microstructure and electrical properties were measured. It was observed that the window for mono-phasic compositions was very narrow for both NST ceramics and Mn doped ceramics. For NST ceramics the variation of A/B ratio influenced the polarization (P-E) hysteresis loop and better piezoelectric and dielectric responses could be found for small stoichiometry deviations (A/B = 0.97). Regarding Mn doping, as compared to undoped KNN which showed leaky polarization (P-E) hysteresis loops, B-site Mn doped ceramics showed a well saturated, less-leaky hysteresis loop and a significant properties improvement. Impedance spectroscopy was used to assess the role of Mn and a relation between charge transport – defects and ferroelectric response in K0.5Na0.5NbO3 (KNN) and Mn doped KNN ceramics could be established. At room temperature the conduction in KNN which is associated with holes transport is suppressed by Mn doping. Hence Mn addition increases the resistivity of the ceramic, which proved to be very helpful for improving the saturation of the P-E loop. At high temperatures the conduction is dominated by the motion of ionized oxygen vacancies whose concentration increases with Mn doping. Single crystals of potassium sodium niobate (KNN) were grown by a modified high temperature flux method. A boron-modified flux was used to obtain the crystals at a relatively low temperature. XRD, EDS and ICP analysis proved the chemical and crystallographic quality of the crystals. The grown KNN crystals exhibit higher dielectric permittivity (29,100) at the tetragonal-to-cubic phase transition temperature, higher remnant polarization (19.4 μC/cm2) and piezoelectric coefficient (160 pC/N) when compared with the standard KNN ceramics. KNN single crystals domain structure was characterized for the first time by piezoforce response microscopy. It could be observed that <001> - oriented potassium sodium niobate (KNN) single crystals reveal a long range ordered domain pattern of parallel 180° domains with zig-zag 90° domains. From the comparison of KNN Single crystals to ceramics, It is argued that the presence in KNN single crystal (and absence in KNN ceramics) of such a long range order specific domain pattern that is its fingerprint accounts for the improved properties of single crystals. These results have broad implications for the expanded use of KNN materials, by establishing a relation between the domain patterns and the dielectric and ferroelectric response of single crystals and ceramics and by indicating ways of achieving maximised properties in KNN materials. Polarized Raman analysis of ferroelectric potassium sodium niobate (K0.5Na0.5)NbO3 (KNN) single crystals was performed. For the first time, an evidence is provided that supports the assignment of KNN single crystals structure to the monoclinic symmetry at room temperature. Intensities of A′, A″ and mixed A′+A″ phonons have been theoretically calculated and compared with the experimental data in dependence of crystal rotation, which allowed the precise determination of the Raman tensor coefficients for (non-leaking) modes in monoclinic KNN. In relation to the previous literature, this study clarifies that assigning monoclinic phase is more suitable than the orthorhombic one. In addition, this study is the basis for non-destructive assessments of domain distribution by Raman spectroscopy in KNN-based lead-free ferroelectrics with complex structures. Searching a deeper understanding of the electrical behaviour of both KNN single crystal and polycrystalline materials for the sake of designing optimized KNN materials, a comparative study at the level of charge transport and point defects was carried out by impedance spectroscopy. KNN single crystals showed lower conductivity than polycrystals from room temperature up to 200 ºC, but above this temperature polycrystalline KNN displays lower conductivity. The low temperature (T < 200 ºC) behaviour reflects the different processing conditions of both ceramics and single crystals, which account for less defects prone to charge transport in the case of single crystals. As temperature increases (T > 200 ºC) single crystals become more conductive than polycrystalline samples, in which grain boundaries act as barriers to charge transport. For even higher temperatures the conductivity difference between both is increased due to the contribution of ionic conduction in single crystals. Indeed the values of activation energy calculated to the high temperature range (T > 300 ºC) were 1.60 and 0.97 eV, confirming the charge transport due to ionic conduction and ionized oxygen vacancies in single crystals and polycrystalline KNN, respectively. It is suggested that single crystals with low defects content and improved electromechanical properties could be a better choice for room temperature applications, though at high temperatures less conductive ceramics may be the choice, depending on the targeted use. Aiming at engineering the properties of KNN polycrystals towards the performance of single crystals, the preparation and properties study of (001) – oriented (K0.5Na0.5)0.98Li0.02NbO3 (KNNL) ceramics obtained by templated grain growth (TGG) using KNN single crystals as templates was undertaken. The choice of KNN single crystals templates is related with their better properties and to their unique domain structure which were envisaged as a tool for templating better properties in KNN ceramics too. X-ray diffraction analysis revealed for the templated ceramics a monoclinic structure at room temperature and a Lotgering factor (f) of 40% which confirmed texture development. These textured ceramics exhibit a long range ordered domain pattern consisting of 90º and 180º domains, similar to the one observed in the single crystals. Enhanced dielectric (13017 at TC), ferroelectric (2Pr = 42.8 μC/cm2) and piezoelectric (d33 = 280 pC/N) properties are observed for textured KNNL ceramics as compared to the randomly oriented ones. This behaviour is suggested to be due to the long range ordered domain patterns observed in the textured ceramics. The obtained results as compared with the data previously reported on texture KNN based ceramics confirm that superior properties were found due to ordered repeated domain pattern. This study provides an useful approach towards properties improvement of KNN-based piezoelectric ceramics. Overall, the present results bring a significant contribution to the pool of knowledge on the properties of sodium potassium niobate materials: a relation between the domain patterns and di-, ferro-, and piezo-electric response of single crystals and ceramics was demonstrated and ways of engineering maximised properties in KNN materials, for example by texturing were established. This contribution is envisaged to have broad implications for the expanded use of KNN over the alternative lead-based materials.

Effects of sulphurization time on Cu2ZnSnS4 absorbers and thin films solar cells obtained from metallic precursors

We report the results of a study of the sulphurization time effects on Cu2ZnSnS4 absorbers and thin film solar cells prepared from dc-sputtered tackedmetallic precursors. Three different time intervals, 10 min, 30min and 60 min, at maximum sulphurization temperature were considered. The effects of this parameter' change were studied both on the absorber layer properties and on the final solar cell performance. The composition, structure, morphology and thicknesses of the CZTS layers were analyzed. The electrical characterization of the absorber layer was carried out by measuring the transversal electrical resistance of the samples as a function of temperature. This study shows an increase of the conductivity activation energy from 10 meV to 54meV for increasing sulphurization time from 10min to 60min. The solar cells were built with the following structure: SLG/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Ni:Al grid. Several ac response equivalent circuit models were tested to fit impedance measurements. The best results were used to extract the device series and shunt resistances and capacitances. Absorber layer's electronic properties were also determined using the Mott–Schottky method. The results show a decrease of the average acceptor doping density and built-in voltage, from 2.0 1017 cm−3 to 6.5 1015 cm−3 and from 0.71 V to 0.51 V, respectively, with increasing sulphurization time. These results also show an increase of the depletion region width from approximately 90 nm–250 nm.