Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser
Data(s) |
2006
|
---|---|
Resumo |
We have demonstrated passive mode-locking in a diode-end-pumped Nd:YVO4 laser using two kinds of semiconductor absorbers whose relaxation region comes from In0.25Ga0.75As grown at low temperature (LT) and GaAs/air interface respectively Mode-locking, using absorbers of the GaAs/air interface relaxation region, has the characteristics of less Q-switching tendency and higher average output power than that using absorbers of LT In0.25Ga0.75As relaxation region, but is not as stable as the latter. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang CL; Wang YG; Ma XY; Liu Y; Sun LQ; Tian Q; Zang ZG; Wang QY .Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser ,CHINESE PHYSICS LETTERS,2006,23(3):616-618 |
Palavras-Chave | #半导体物理 #SATURABLE ABSORBER #MIRROR |
Tipo |
期刊论文 |