Mechanical effects of the self-organization of dislocations and related critical characteristics

The effects of the dislocation pattern formed due to the self-organization of the dislocations in crystals on the macroscopic hardening and dynamic internal friction (DIF) during deformation are studied. The classic dislocation models for the hardening and DIF corresponding to the homogeneous dislocation configuration are extended to the case for the non-homogeneous one. In addition, using the result of dislocation patterning deduced from the non-linear dlislocation dynamics model for single slip, the correlation between the dislocation pattern and hardening as well as DIF is obtained. It is shown that in the case of the tension with a constant strain rate, the bifurcation point of dislocation patterning corresponds to the turning point in the stress versus strain and DIF versus strain curves. This result along with the critical characteristics of the macroscopic behavior near the bifurcation point is microscopically and macroscopically in agreement with the experimental findings on mono-crystalline pure aluminum at temperatures around 0.5T(m). The present study suggests that measuring the DIF would be a sensitive and useful mechanical means in order to study the critical phenomenon of materials during deformation.

Structure of Vortex Dislocations in a Wake-type Flow

Structure and dynamical processes of vortex dislocations in a kind of wake-type flow are described clearly by vortex lines, which are directly constructed from data of three-dimensional direct numerical simulations of the flow evolution.

Molecular dynamics studies on dislocations in crystallites of nanocrystalline alpha-iron

Molecular dynamics simulations have been carried our to study the atomic structure of the crystalline component of nanocrystalline alpha-iron. A two-dimensional computational block is used to simulate the consolidation process. It is found that dislocations are generated in the crystallites during consolidation when the grain size is large enough. The critical value of the grain size for dislocation generation appears to be about 9 nm. This result agrees with experiment qualitatively. AN dislocations that are preset in the original grains glide out during consolidation. It shows that dislocations in the crystallites we generated in consolidation process, but not in the original grains. Higher consolidation pressure results in more dislocations. Furthermore, new interfaces are found within crystallites. These interfaces might result from the special environment of nanomaterial. (C) 1998 Acta Metallurgica Inc.

Dislocations in the crystallites of nanocrystalline alpha-Fe - A molecular dynamics study

Molecular dynamics simulations are carried out in order to study the atomic structure of crystalline component, of nanocrystalline alpha-Fe when it is consolidated from small grains. A two-dimensional computational block is used to simulate the consolidation process. All the preset dislocations in the original grains glide out of them in the consolidation process, but new dislocations can generate when the grain size is large enough. It shows that dislocations exist in the consolidated material rather than in the original grains. Whether dislocations exist in the crystalline component of the resultant model nana-material depends upon grain size. The critical value of grain size for dislocation generation appears to be about 9 nm. This result agrees with experiments qualitatively.

Vortex dislocations in wake-type flow induced by spanwise disturbances

Vortex dislocations in wake-type flow induced by three types of spanwise disturbances superimposed on an upstream velocity profile are investigated by direct numerical simulations. Three distinct modes of vortex dislocations and flow transitions have been found. A local spanwise exponential decay disturbance leads to the appearance of a twisted chainlike mode of vortex dislocation. A stepped spanwise disturbance causes a streamwise periodic spotlike mode of vortex dislocation. A spanwise sinusoidal wavy disturbance with a moderate waviness causes a strong unsteadiness of wake behavior. This unsteadiness starts with a systematic periodic mode of vortex dislocation in the spanwise direction followed by the spanwise vortex shedding suppressed completely with increased time and the near wake becoming a steady shear flow. Characteristics of these modes of vortex dislocation and complex vortex linkages over the dislocation, as well as the corresponding dynamic processes related to the appearance of dislocations, are described by examining the variations of vortex lines and vorticity distribution. The nature of the vortex dislocation is demonstrated by the substantial vorticity modification of the spanwise vortex from the original spanwise direction to streamwise and vertical directions, accompanied by the appearance of noticeable vortex branching and complex vortex linking, all of which are produced at the locations with the biggest phase difference or with a frequency discontinuity between shedding cells. The effect of vortex dislocation on flow transition, either to an unsteady irregular vortex flow or suppression of the Kaacutermaacuten vortex shedding making the wake flow steady state, is analyzed. Distinct similarities are found in the mechanism and main flow phenomena between the present numerical results obtained in wake-type flows and the experimental-numerical results of cylinder wakes reported in previous studies.

Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

Using spatially resolved cathodoluminescence spectroscopy, we investigate the spatial luminescence distribution in a fully strained (In,Ga)N layer, in particular, its correlation with the distribution of threading dislocations (TDs). Regarding the impact of TDs on the luminescence properties, we can clearly distinguish between pure edge-type TDs and TDs with screw component. At the positions of both types of TDs, we establish nonradiative recombination sinks. The radius for carrier capture is at least four times larger for TDs with screw component as for pure edge-type TDs. The large capture radius of the former is due to a spiral-like growth mode resulting in an increase in the In content in the center of the spiral domains in comparison to their periphery.

Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates

GaSb and InSb epilayers grown on GaAs (001) vicinal substrates misoriented toward (111) plane were studied using high resolution x-ray diffraction. The results show that GaSb and InSb epilayers take on positive crystallographic tilt, and the asymmetric distribution of 60 degrees misfit dislocations in {111} glide planes have an effect on the tilt. In addition, the vicinal substrate influences the distribution of the threading dislocations in {111} glide planes, and the density of dislocation in the (111) plane is higher than in the ((1) over bar(1) over bar1) plane. A model was proposed to interpret the distribution of full width at half maximum, which can help us understand the formation and glide process of the dislocations. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3115450]

Generation and behavior of pure-edge threading misfit dislocations in InxGa1-xN/GaN multiple quantum wells

The relaxation of the misfit strain by the formation of misfit dislocations in InxGa1-xN/GaN multiple quantum wells grown by metal-organic chemical-vapor deposition was investigated by the cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. It is found that the misfit dislocations generated from strain relaxation are all pure-edge threading dislocations with burgers vectors of b=1/3<11 (2) over bar0>. The misfit dislocations arise from the strain relaxation due to the thickness of strained layer greater than the critical thickness. The relaxation of strained layer was mainly achieved by the formation of dislocations and localization of In, while the dislocations changed their slip planes from {0001} to {10 (1) over bar0}. With the increasing temperature, the efficiency of photoluminescence decrease sharply. It indicates that the relaxation of the misfit strain has a strong effect on optical efficiency of film. (C) 2004 American Institute of Physics.

Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AlN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2D one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.

Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

We investigate the origin of yellow luminescence in n-type GaN. It is found that the relative intensity of yellow luminescence increases as the full width at half maximum of the x-ray diffraction rocking curve at the (102) plane increases. This indicates that the yellow luminescence is related to the edge dislocation density. In addition, the relative intensity of yellow luminescence is confirmed to increase with increasing Si doping for the high quality GaN we have obtained. We propose that the yellow luminescence is effectively enhanced by the transition from donor impurities such as Si to acceptors around the edge dislocations in n-type GaN. (c) 2006 American Institute of Physics.

TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy

A ZnTe layer grown on GaAs substrate by hot-wall epitaxy (HWE) was studied using transmission electron microscopy (TEM). For a (110) cross-sectional specimen, its (001) ZnTe/GaAs interface was analysed by large angle stereo-projection (LASP) and high resolution electron microscopy (HREM). In the LASP, a double diffraction occurred and moire fringes were formed, meanwhile misfit dislocations were revealled clearly by weak beam technique. In HREM, not only Lomer and 60 degrees types of misfit dislocations were observed, but also two types of stacking faults were analysed. The residual strain was estimated by both methods.

Alignment of threading dislocations in the In0.3Ga0.7As/GaAs superlattice

Threading dislocations in the III-V heterostructure system are investigated based on the observation of dislocations in the In0.3Ga0.7As/GaAs superlattice with transmission electron microscope. To explain both the presence and orientation of threading dislocations in the epilayers an alloy effect on the dislocation lines in ternary III-V compounds is proposed, and, in addition, a pseudo-stable state for threading dislocations in binary compounds is recognized. (C) 1998 Elsevier Science B.V. All rights reserved.

Abnormal alignment of misfit dislocations in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure

It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure that misfit dislocation lines deviate from the [110] directions at a certain angle depending on the indium content x. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the III-V ternary compounds.

Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure

It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As system grown on the (001) InP substrate that misfit dislocation lines deviate [110] directions at an angle with its value depending on the gallium content. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on misfit dislocations in the interface between the III-V ternary compounds. (C) 1998 American Institute of Physics.