Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

Using spatially resolved cathodoluminescence spectroscopy, we investigate the spatial luminescence distribution in a fully strained (In,Ga)N layer, in particular, its correlation with the distribution of threading dislocations (TDs). Regarding the impact of TDs on the luminescence properties, we can clearly distinguish between pure edge-type TDs and TDs with screw component. At the positions of both types of TDs, we establish nonradiative recombination sinks. The radius for carrier capture is at least four times larger for TDs with screw component as for pure edge-type TDs. The large capture radius of the former is due to a spiral-like growth mode resulting in an increase in the In content in the center of the spiral domains in comparison to their periphery.

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Made available in DSpace on 2010-04-28T13:49:55Z (GMT). No. of bitstreams: 1 Carrier capture by threading dislocations in (In,Ga)NGaN heteroepitaxial layers.pdf: 676098 bytes, checksum: 9e49feb42d6d480009aac5029eb15b52 (MD5) Previous issue date: 2010

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