47,XY,+dcl(9)(q34)wcp(9+)/46,XY伴隐睾一例

患儿男,10岁,因"双侧隐睾"就诊.患儿系足月、顺产、5岁时发现头颅大,经医院诊断为脑积水.几岁时做双侧隐睾手术.患儿身高120 cm.头颅发育不规则,颜面不对称,自小严重的智力低下,说话不清.

江汉平原47号钻孔中的化石硅藻及其在古环境分析上的意义

江汉平原47号钻孔,位于湖北省江汉平原的江陵县,在其上段的46.6-2.2m层位上,有丰富的化石硅藻,约有26属148种,其中绝大多数是现存的淡水种类,并以附生性、沿岸带和浅水性的种类为主。种类较多的属有:Navicula(28种)、Cymbella(23种)、Achnanthes(15种)、Gomphonema(14种)和Eunotia(13种)。主要种类有Gomphonema tropicale var. nonpunctatum、Cyclotella comta、Cocconeis placemul

江汉平原47号钻孔中化石硅藻的新种类

在江汉平原47号钻孔中的46.60—2.20m层位上(上更新统到全新统),含有丰富的化石硅藻,经鉴定有4个新种类,即Cymbella jianghanensis sp.nov.,C.tenuistriata sp.nov.,C.cistula(Hempr.) Grun.var.retcta var.nov.,Gomphonema tropicale Brun var.nonpunctatum var.nov..同时,对一个变种进行了重新命名和特征修改,即Eunotia clevei Grun.var.ob

Phosphorus fractions and alkaline phosphatase activity in sediments of a large eutrophic Chinese lake (Lake Taihu)

Spatial, vertical, and seasonal variations in phosphorus fractions and in alkaline phosphatase activity (APA) were investigated in sediments in a large-shallow eutrophic Chinese lake (Lake Taihu) in 2003-2004. The phosphorus content was highest in the most seriously polluted lake area. Iron-bound phosphorus (Fe(OOH)-P) dominated (47% on average) among the phosphorus fractions determined according to Golterman (Hydrobiologia 335:87-95, 1996). Notably, organically-bound P comprised a further significant additional portion (acid-soluble + hot NaOH-extractable organic P = 25%), which was highest at the most polluted sites. The Fe(OOH)-P content was the lowest in spring (April, 2004), suggesting that degradation of organic matter led to the release of iron-bound phosphates. Sediment APA showed a significant positive relationship with both organically-bound P and Fe(OOH)-P. Consequently, organically-bound P is an important portion of the sediment phosphorus in Lake Taihu. It is mainly derived from freshly-settled autochthonous particles and from external discharges. Organically-bound P induces APA and may lead to the release of bioavailable phosphates from the organic sediments, thereby accelerating lake eutrophication.

In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中的正磁电阻效应

在低温强磁场条件下,对In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的散射引起的.

两个子带占据的In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中填充因子的变化规律

研究了低温(1.5K)和强磁场(0-13T)条件下,InP基In_(0.53)Ga_(0.47)As/In_(0.52)A_(l0.48)As量子阱中电子占据两个子带时填充因子随磁场的变化规律.结果表明,在电子自旋分裂能远小于朗道能级展宽的情况下,如果两个子带分裂能是朗道分裂能的整数倍时,即⊿E_(21)=κ*ω_c(其中κ为整数),填充因子为偶数;当两个子带分裂能为朗道分裂能的半奇数倍时,即⊿E_(21)=(2κ+1*ω/2,填充因子出现奇数.

In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中双子带占据的二维电子气的输运特性

研究了不同沟道厚度的In_(0.53) Ga_(0.47)As/In_(0.52)Al_(0.48)As量子阱中双子带占据的二维电子气的输运特性.在考虑了两个子带电子之间的磁致子带间散射效应后,通过分析Shubnikov-de Haas振荡一阶微分的快速傅里叶变换结果,获得了每个子带电子的浓度、输运散射时间、量子散射时间以及子带之间的散射时间.结果表明,对于所研究的样品,第一子带电子受到的小角散射更强,这与第一子带电子受到了更强的电离杂质散射有关.

GaAs研磨片化学腐蚀均匀性的分析

采用不同的化学腐蚀方法，探讨了不同体系成份、温度、腐蚀过程的吸放热对晶片均匀性的影响，提出氨水系列，进行晶片化学腐蚀，晶片厚度均匀性11.47%，为下步工艺提供平整度较好的晶片。

匹配In（0.53）Ga（0.47）As/InP量子阱材料的GSMBE生长及特性分析

于2010-11-23批量导入

47 MeV/u ~(12)C与~(133)Cs反应中碘同位素产生截面的Q_(gg)依赖关系

用47 MeV/u 12C离子轰击133Cs靶,应用放射化学分离技术和离线γ射线谱学,得到碘同位素的产生截面。丰中子碘同位素的独立产生截面指数地依赖于Qgg值,而缺中子碘同位素的独立产生截面则偏离这一直线关系。这一事实可对在深部非弹转移过程中产生丰中子碘同位素予以解释。