800V lateral IGBT in bulk Si for low power compact SMPS applications

An 800V rated lateral IGBT for high frequency, low-cost off-line applications has been developed. The LIGBT features a new method of adjusting the bipolar gain, based on a floating N+ stripe in front of the P+ anode/drain region. The floating N+ layer enhances the carrier recombination at the anode/drain side of the drift region resulting in a very significant decrease in the turn-off speed and substantially lower overall losses. Switching speeds as low as 140ns at 25oC and 300ns at 125oC have been achieved with corresponding equivalent Rdson at 125oC below 90mω.cm2. A fully operational AC-DC converter using a controller with an integrated LIGBT+depletion mode MOSFET chip has been designed and qualified in plastic SOP8 packages and used in 5W, 65kHz SMPS applications. The device is fabricated in 0.6μm bulk silicon CMOS technology without any additional masking steps. © 2013 IEEE.

Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated. © 2013 IEEE.

Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni(10 at.% Pt) film with Si(1 0 0) substrate

The reaction between an 11 nm Ni(10 at.% Pt) film on a Si substrate has been examined by in situ X-ray diffraction (XRD), atom probe tomography (APT) and transmission electron microscopy (TEM). In situ XRD experiments show the unusual formation of a phase without an XRD peak through consumption of the metal. According to APT, this phase has an Si concentration gradient in accordance with the θ-Ni2Si metastable phase. TEM analysis confirms the direct formation of θ-Ni2Si in epitaxy on Si(1 0 0) with two variants of the epitaxial relationship. © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

GexSi1-x/Si应变层超晶格及其相关材料的分子束外延生长和特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs的电学补偿机理及微区均匀性对电子迁移率的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs中El2的光淬灭效应及有关深能级行为的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

a-Si:H光致变化效应的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si-GaAs注入退火特性的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

a-Si:H的P+/i/n+结构器件

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

a-Si:H/a-C:H超晶格的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si基量子阱材料1.3微米波长光电探测器的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

GexSi1-x/Si异质结构中的缺陷研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

3C-SiC/Si材料的生长及其质量表征方法的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

金属薄膜与半导体的反应——Co-Si多层膜，LREM硅化物薄膜，TiN/n-GaAs体系

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z