Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy

This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopic studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN epifilms grown with silicon nitride buffer layer when compared with the sample grown without silicon nitride buffer layer. The low temperature PL shows a free excitonic (FX) emission peak at 3.51 eV at the temperature of 5 K with a very narrow line width of 35 meV. Temperature dependent PL spectra follow the Varshni equation well and peak energy blue shifts by similar to 63 meV from 300 to 5 K. Raman data confirms the strain free nature and reasonably good crystallinity of the films. The GaN/p-Si heterojunctions fabricated without substrate nitridation show a superior photovoltaic performance compared to the devices fabricated in presence of substrate nitridation. The discussions have been carried out on the junction properties. Such single junction devices exhibit a promising fill factor and conversion efficiency of 23.36 and 0.12 %, respectively, under concentrated AM1.5 illumination.

Novel Functions of (p)ppGpp and Cyclic di-GMP in Mycobacterial Physiology Revealed by Phenotype Microarray Analysis of Wild-Type and Isogenic Strains of Mycobacterium smegmatis

The bacterial second messengers (p)ppGpp and bis-(3'-5')-cyclic dimeric GMP (c-di-GMP) regulate important functions, such as transcription, virulence, biofilm formation, and quorum sensing. In mycobacteria, they regulate long-term survival during starvation, pathogenicity, and dormancy. Recently, a Pseudomonas aeruginosa strain lacking (p) ppGpp was shown to be sensitive to multiple classes of antibiotics and defective in biofilm formation. We were interested to find out whether Mycobacterium smegmatis strains lacking the gene for either (p)ppGpp synthesis (Delta rel(Msm)) or c-di-GMP synthesis (Delta dcpA) would display similar phenotypes. We used phenotype microarray technology to compare the growth of the wild-type and the knockout strains in the presence of several antibiotics. Surprisingly, the Delta rel(Msm) and Delta dcpA strains showed enhanced survival in the presence of many antibiotics, but they were defective in biofilm formation. These strains also displayed altered surface properties, like impaired sliding motility, rough colony morphology, and increased aggregation in liquid cultures. Biofilm formation and surface properties are associated with the presence of glycopeptidolipids (GPLs) in the cell walls of M. smegmatis. Thin-layer chromatography analysis of various cell wall fractions revealed that the levels of GPLs and polar lipids were reduced in the knockout strains. As a result, the cell walls of the knockout strains were significantly more hydrophobic than those of the wild type and the complemented strains. We hypothesize that reduced levels of GPLs and polar lipids may contribute to the antibiotic resistance shown by the knockout strains. Altogether, our data suggest that (p)ppGpp and c-di-GMP may be involved in the metabolism of glycopeptidolipids and polar lipids in M. smegmatis.

Anti Human Immunodeficiency Virus Type 1 (HIV-1) Agents 4. Discovery of 5,5 '-(p-Phenylenebisazo)-8-hydroxyquinoline Sulfonates as New HIV-1 Inhibitors in Vitro

To search for compounds with superior anti-human immunodeficiency virus type 1 (HIV-1) activity, ten 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline sulfonates (4a-j) were synthesized and preliminarily evaluated as HIV-1 inhibitors in vitro for the first time. Some compounds demonstrated anti-HIV-1 activity, especially 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline p-ethylbenzenesulfonate (4g) and 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline p-chlorobenzenesulfonate (41) showed the more potent anti-HIV-1 activity with 50% effective concentration (EC50) values of 2.59 and 4.01 mu g/ml, and therapeutic index (TI) values of 31.77 and 24.51, respectively.

p-GaN欧姆接触电极及GaN蓝光激光器窄条工艺研究

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GaN基功率型LED的P、N双透明接触电极及制备方法

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Improved light extraction of GaN-based LEDs with nano-roughened p-GaN surfaces

p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs with nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces.

Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors

We investigated the influence of thickness of p-GaN layer on the performance of p-i-n structure GaN ultraviolet photodetector. Through the simulation calculation, it was found that both the quantum efficiency and dark current of device decrease when employing thicker p-GaN layer, while both the quantum efficiency and dark current increase with decreasing thickness of p-GaN layer. It is suggested that the Schottky contact junction between the metal and p-GaN may be responsible for the incompatible effect. We has to make a suitable choice of the thickness of p-GaN in the device design according to the application requirement.

Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area

Visible-blind p-i-n avalanche photodiodes (APDs) were fabricated with high-quality GaN epilayers deposited on c-plane sapphire substrates by metal-organic chemical vapour deposition. Due to low dislocation density and a sophisticated device fabrication process, the dark current was as small as similar to 0.05 nA under reverse bias up to 20V for devices with a large diameter of 200 mu m, which was among the largest device area for GaN-based p-i-n APDs yet reported. When the reverse bias exceeded 38V the dark current increased sharply, exhibiting a bulk avalanche field-dominated stable breakdown without microplasma formation or sidewall breakdown. With ultraviolet illumination (360 nm) an avalanche multiplication gain of 57 was achieved.

Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

The leakage mechanism of GaN-based p-i-n (p-AlGaN/i-GaN/n-GaN) UV detector has been investigated. With the same dislocation density, devices made from material with higher density of V-pits on surface produce larger leakage current. SEM images show that some V-pits penetrate into i-GaN layer, sometimes even the n-GaN layer. If p-ohmic contact metal (Ni/Au) deposits in the V-pits, Schottky contact would be formed at the interface of metal and i-GaN, or form ohmic contact at the interface of metal and n-GaN. The existence of parallel Schottky junction and ohmic contact resistance enhances the leakage current greatly.

Frequency dependence of junction capacitance of GaN p-i-n UV detectors

In this paper frequency dependence of small-signal capacitance of p-i-n UV detectors, which were fabricated on GaN grown on sapphire substrate by metalorganic chemical vapor deposition, has been studied. The Schibli-Milnes model was used to analyze the capacitance-frequency characteristics. According to high frequency C-V measurements, the deep level mean concentration is about 2.98 x 10(20) cm(-3). The deep level is caused by the un-ionised Mg dopant. The calculated Mg activation energy is 260 meV and the hole thermal capture cross section of the deep level is about 2.73 x 10(-22) cm(2). The applicability of the Schibli-Milnes model is also discussed when the concentration of deep levels exceeds that of the heavily doped n-side. It is concluded that the analytic expression of the Schibli-Milnes model can still be used to describe the capacitance-frequency characteristics of GaN p-i-n UV detectors in good agreement with experiment. (c) 2005 Elsevier Ltd. All rights reserved.

Cathodoluminescence and Raman research of V-shape inverted pyramid in HVPE grown GaN film

Thick GaN films with high quality have been grown on (0001) sapphire substrate in a home-made vertical HVPE reactor. Micron-size hexagonal pits with inverted pyramid shape appear on the film surface, which have six triangular {10-11} facets. These I {10-11} facets show strong luminescence emission and are characteristic of doped n-type materials. Broad red emission is suppressed in {10-11} facets and is only found at the flat region out of the pit, which is related with the decreasing defects on {10-11} facets. Low CL emission intensity is observed at the apex of V-shape pits due to the enhanced nonradiative recombination. Raman spectra show that there are higher carrier concentration and low strain in the pit in comparison to the flat region out of the pit. The strain relaxation may be the main mechanism of the V-shape pits formation on the GaN film surface. (c) 2006 Elsevier B.V. All rights reserved.

Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact

Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 x 10(-4) Omega cm(2) is obtained at annealing temperature of 550 degrees C.

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter-base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer. (C) 2005 Elsevier Ltd. All rights reserved.

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaOx interfacial layer and confinement effect rendered by the AlN potential barrier layer.